Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model
In this paper, the intermodulation distortion (IMD) behavior of LDMOS transistors is treated. First, an analysis is performed to explain measured IMD characteristics in different classes of operation. It is shown that the turn-on region plays an important role in explaining measured IMD behavior, wh...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2002-12, Vol.50 (12), p.2834-2842 |
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| container_title | IEEE transactions on microwave theory and techniques |
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| creator | Fager, C. Pedro, J.C. de Carvalho, N.B. Zirath, H. |
| description | In this paper, the intermodulation distortion (IMD) behavior of LDMOS transistors is treated. First, an analysis is performed to explain measured IMD characteristics in different classes of operation. It is shown that the turn-on region plays an important role in explaining measured IMD behavior, which may also give a clue to the excellent linearity of LDMOS transistors. Thereafter, with this knowledge, a new empirical large-signal model with improved capability of predicting IMD in LDMOS amplifiers is presented. The model is verified against various measurements at low as well as high frequency in a class-AB power amplifier circuit. |
| doi_str_mv | 10.1109/TMTT.2002.805187 |
| format | Article |
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First, an analysis is performed to explain measured IMD characteristics in different classes of operation. It is shown that the turn-on region plays an important role in explaining measured IMD behavior, which may also give a clue to the excellent linearity of LDMOS transistors. Thereafter, with this knowledge, a new empirical large-signal model with improved capability of predicting IMD in LDMOS amplifiers is presented. The model is verified against various measurements at low as well as high frequency in a class-AB power amplifier circuit.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2002.805187</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Circuits ; Distortion measurement ; Frequency measurement ; High frequencies ; High power amplifiers ; Intermodulation distortion ; Linearity ; Mathematical models ; Microwaves ; Performance analysis ; Performance evaluation ; Power measurement ; Predictive models ; Semiconductor devices ; Transistor amplifiers ; Transistors</subject><ispartof>IEEE transactions on microwave theory and techniques, 2002-12, Vol.50 (12), p.2834-2842</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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First, an analysis is performed to explain measured IMD characteristics in different classes of operation. It is shown that the turn-on region plays an important role in explaining measured IMD behavior, which may also give a clue to the excellent linearity of LDMOS transistors. Thereafter, with this knowledge, a new empirical large-signal model with improved capability of predicting IMD in LDMOS amplifiers is presented. The model is verified against various measurements at low as well as high frequency in a class-AB power amplifier circuit.</description><subject>Circuits</subject><subject>Distortion measurement</subject><subject>Frequency measurement</subject><subject>High frequencies</subject><subject>High power amplifiers</subject><subject>Intermodulation distortion</subject><subject>Linearity</subject><subject>Mathematical models</subject><subject>Microwaves</subject><subject>Performance analysis</subject><subject>Performance evaluation</subject><subject>Power measurement</subject><subject>Predictive models</subject><subject>Semiconductor devices</subject><subject>Transistor amplifiers</subject><subject>Transistors</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0U1LAzEQBuAgCtaPu-AleNDT1kk22UyO4je0VLCeQ9ydLZHtbk22iP_eLfUgHvQ0DDzvHOZl7ETAWAiwl_PpfD6WAHKMoAWaHTYSWpvMFgZ22QhAYGYVwj47SOltWJUGHLHZU6QqlH3oWt7V_HF6w0PLJzfT2TPvo29TSH0XuV-umlAHiomvU2gX3POWPnjj44KyFBatb_iyq6g5Ynu1bxIdf89D9nJ3O79-yCaz-8frq0lWKgt95gGLuiRtakQkrUQuc0IyWlYyfy1rrQqgSiqyeQUSJBVlVZRWKlO9YqFVfsgutndXsXtfU-rdMqSSmsa31K2Ts2CsUiDEIM__lNIC5Ijmf4ha5MoUAzz7Bd-6dRxekByi0rIY7g0ItqiMXUqRareKYenjpxPgNo25TWNu05jbNjZETreRQEQ_uMUB5V_bZI-P</recordid><startdate>20021201</startdate><enddate>20021201</enddate><creator>Fager, C.</creator><creator>Pedro, J.C.</creator><creator>de Carvalho, N.B.</creator><creator>Zirath, H.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| source | IEEE Electronic Library (IEL) |
| subjects | Circuits Distortion measurement Frequency measurement High frequencies High power amplifiers Intermodulation distortion Linearity Mathematical models Microwaves Performance analysis Performance evaluation Power measurement Predictive models Semiconductor devices Transistor amplifiers Transistors |
| title | Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model |
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