GaAs Power MESFET's: Design, Fabrication, and Performance
This paper reviews the state of the art of power GaAs MESFET's. Items that will be covered are the operating principles of the device from a material and geometric point of view, the design, fabrication sequences, and material structures used by various laboratories, the factors identified as i...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 1979-05, Vol.27 (5), p.367-378 |
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| container_end_page | 378 |
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| container_issue | 5 |
| container_start_page | 367 |
| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 27 |
| creator | Dilorenzo, J.V. Wisseman, W.R. |
| description | This paper reviews the state of the art of power GaAs MESFET's. Items that will be covered are the operating principles of the device from a material and geometric point of view, the design, fabrication sequences, and material structures used by various laboratories, the factors identified as important to power by workers in the field the performance of the device in terms of frequency effects, power per unit gate-width effects, scaling from small to large gate-width devices, and voltage effects. In addition, the circuit applications of GaAs FET's will be briefly discussed. |
| doi_str_mv | 10.1109/TMTT.1979.1129635 |
| format | Article |
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| identifier | ISSN: 0018-9480 |
| ispartof | IEEE transactions on microwave theory and techniques, 1979-05, Vol.27 (5), p.367-378 |
| issn | 0018-9480 1557-9670 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Circuit noise Equivalent circuits Fabrication Frequency Gallium arsenide Instruments MESFETs Microwave devices Microwave FETs Voltage |
| title | GaAs Power MESFET's: Design, Fabrication, and Performance |
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