GaAs Power MESFET's: Design, Fabrication, and Performance

This paper reviews the state of the art of power GaAs MESFET's. Items that will be covered are the operating principles of the device from a material and geometric point of view, the design, fabrication sequences, and material structures used by various laboratories, the factors identified as i...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1979-05, Vol.27 (5), p.367-378
Hauptverfasser: Dilorenzo, J.V., Wisseman, W.R.
Format: Artikel
Sprache:eng
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Zusammenfassung:This paper reviews the state of the art of power GaAs MESFET's. Items that will be covered are the operating principles of the device from a material and geometric point of view, the design, fabrication sequences, and material structures used by various laboratories, the factors identified as important to power by workers in the field the performance of the device in terms of frequency effects, power per unit gate-width effects, scaling from small to large gate-width devices, and voltage effects. In addition, the circuit applications of GaAs FET's will be briefly discussed.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1979.1129635