High- Q On-Chip C -Band Inductor With a Nanocrystalline MnZn-Ferrite Film Core
The miniaturized on-chip inductor was developed for the C-band (4-8 GHz) and beyond, to meet the requirements of upcoming 5G technology devices. This paper presents the deposition of nanocrystalline manganese-zinc ferrite (Mn x Zn 1-x Fe 2 O 4 ; x = 0.5) thin films in a CMOS-compatible way on top of...
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| Veröffentlicht in: | IEEE transactions on magnetics 2019-07, Vol.55 (7), p.1-4 |
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| creator | Sai, Ranajit Ralandinliu Kahmei, R. D. Shivashankar, S. A. Yamaguchi, Masahiro |
| description | The miniaturized on-chip inductor was developed for the C-band (4-8 GHz) and beyond, to meet the requirements of upcoming 5G technology devices. This paper presents the deposition of nanocrystalline manganese-zinc ferrite (Mn x Zn 1-x Fe 2 O 4 ; x = 0.5) thin films in a CMOS-compatible way on top of an on-chip inductor structure. A 200 nm-thick film was conformally deposited directly on a foundry-fabricated inductor after removing the top passivation layer by dry etching. The Q-factor is found to be enhanced by 10% at the upper end (8 GHz) of the C-band, while the self-resonance frequency of the inductor is up-shifted to 21 from 16 GHz. The film on a dummy Si (100) substrate exhibits saturation magnetization (4πMS = 160 mT) and coercivity (H C = 3.5 mT) much lower than for the bulk material. The film was deposited by a rapid (c5 min) and low-temperature (c200 °C) solution-based process under microwave irradiation (2.45 GHz) of 300 W. This is the first report of an on-chip C-band inductor with a manganese-zinc ferrite film core. |
| doi_str_mv | 10.1109/TMAG.2019.2916699 |
| format | Article |
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The film was deposited by a rapid (c5 min) and low-temperature (c200 °C) solution-based process under microwave irradiation (2.45 GHz) of 300 W. 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The film on a dummy Si (100) substrate exhibits saturation magnetization (4πMS = 160 mT) and coercivity (H C = 3.5 mT) much lower than for the bulk material. The film was deposited by a rapid (c5 min) and low-temperature (c200 °C) solution-based process under microwave irradiation (2.45 GHz) of 300 W. This is the first report of an on-chip C-band inductor with a manganese-zinc ferrite film core.</description><subject>5G mobile communication</subject><subject>C-band</subject><subject>Ferrites</subject><subject>inductor</subject><subject>Inductors</subject><subject>manganese–zinc ferrite</subject><subject>Q-factor</subject><subject>System-on-chips</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1Kw0AUhQdRsFYfQNzMC0y9M5lMMssa7A_0B6EiuAk3yY0dSSdlEhd9-7a0uDocON9ZfIw9SxhJCfZ1sxxPRwqkHSkrjbH2hg2k1VIAGHvLBgAyFVYbfc8euu73VHUsYcBWM_ezFfyDr73Itm7PMy7e0Fd87qu_sm8D_3L9liNfoW_LcOh6bBrniS_9txcTCsH1xCeu2fGsDfTI7mpsOnq65pB9Tt432Uws1tN5Nl6IUpm4F1ipsiCITJWmhFTqwmpESGusIS5sXagikdpIiHRKEqtYFSVilBDapABN0ZDJy28Z2q4LVOf74HYYDrmE_CwkPwvJz0Lyq5AT83JhHBH979NEqxRUdASXGlvT</recordid><startdate>201907</startdate><enddate>201907</enddate><creator>Sai, Ranajit</creator><creator>Ralandinliu Kahmei, R. 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A. ; Yamaguchi, Masahiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c265t-ad2cbe036d88eaec4b94aa08faf05b9fb2b714610348e1ad52bcaa37ea97b04e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>5G mobile communication</topic><topic>C-band</topic><topic>Ferrites</topic><topic>inductor</topic><topic>Inductors</topic><topic>manganese–zinc ferrite</topic><topic>Q-factor</topic><topic>System-on-chips</topic><toplevel>online_resources</toplevel><creatorcontrib>Sai, Ranajit</creatorcontrib><creatorcontrib>Ralandinliu Kahmei, R. D.</creatorcontrib><creatorcontrib>Shivashankar, S. 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A.</au><au>Yamaguchi, Masahiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High- Q On-Chip C -Band Inductor With a Nanocrystalline MnZn-Ferrite Film Core</atitle><jtitle>IEEE transactions on magnetics</jtitle><stitle>TMAG</stitle><date>2019-07</date><risdate>2019</risdate><volume>55</volume><issue>7</issue><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>0018-9464</issn><eissn>1941-0069</eissn><coden>IEMGAQ</coden><abstract>The miniaturized on-chip inductor was developed for the C-band (4-8 GHz) and beyond, to meet the requirements of upcoming 5G technology devices. This paper presents the deposition of nanocrystalline manganese-zinc ferrite (Mn x Zn 1-x Fe 2 O 4 ; x = 0.5) thin films in a CMOS-compatible way on top of an on-chip inductor structure. A 200 nm-thick film was conformally deposited directly on a foundry-fabricated inductor after removing the top passivation layer by dry etching. The Q-factor is found to be enhanced by 10% at the upper end (8 GHz) of the C-band, while the self-resonance frequency of the inductor is up-shifted to 21 from 16 GHz. The film on a dummy Si (100) substrate exhibits saturation magnetization (4πMS = 160 mT) and coercivity (H C = 3.5 mT) much lower than for the bulk material. The film was deposited by a rapid (c5 min) and low-temperature (c200 °C) solution-based process under microwave irradiation (2.45 GHz) of 300 W. This is the first report of an on-chip C-band inductor with a manganese-zinc ferrite film core.</abstract><pub>IEEE</pub><doi>10.1109/TMAG.2019.2916699</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-3563-2257</orcidid><orcidid>https://orcid.org/0000-0002-3601-7619</orcidid><orcidid>https://orcid.org/0000-0002-0335-8441</orcidid></addata></record> |
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| subjects | 5G mobile communication C-band Ferrites inductor Inductors manganese–zinc ferrite Q-factor System-on-chips |
| title | High- Q On-Chip C -Band Inductor With a Nanocrystalline MnZn-Ferrite Film Core |
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