Exchange Bias Effect on the Relaxation Behavior of the IrMn/NiFe Bilayer System
Magnetization dynamic of exchange bias IrMn/NiFe bilayers system were investigated. Samples with fixed ferromagnetic (FM) layer thickness of 25 nm and antiferromagnetic (AFM) layer thickness t AFM of 5, 10, 15 and 20 nm were deposited by dc-magnetron sputtering on buffered silicon substrates. The st...
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| Veröffentlicht in: | IEEE transactions on magnetics 2011-10, Vol.47 (10), p.4227-4230 |
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| creator | Abdulahad, Faria Basheer Hung, Dung-Shung Chiu, Yu-Che Lee, Shang-Fan |
| description | Magnetization dynamic of exchange bias IrMn/NiFe bilayers system were investigated. Samples with fixed ferromagnetic (FM) layer thickness of 25 nm and antiferromagnetic (AFM) layer thickness t AFM of 5, 10, 15 and 20 nm were deposited by dc-magnetron sputtering on buffered silicon substrates. The static exchange bias field extracted from the magnetization curves increased at the beginning with increasing AFM layer thickness then slightly decreased. The dynamic behavior was studied from the ferromagnetic resonance (FMR) spectra of the samples under external magnetic field in the range 50-750 Oe. The linewidth versus frequency was found to have two distinct slope regions for the samples with high exchange bias values. The damping coefficient at frequencies up to about 7 GHz is found to be generated from the intrinsic linewidth broadening and it has a similar tendency to the exchange bias field with increasing AFM layer thickness. At higher frequencies, the damping coefficient is generated from the extrinsic contributions to the linewidth broadening and its behavior with increasing AFM layer thickness follows the dynamic anisotropy. |
| doi_str_mv | 10.1109/TMAG.2011.2157321 |
| format | Article |
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Samples with fixed ferromagnetic (FM) layer thickness of 25 nm and antiferromagnetic (AFM) layer thickness t AFM of 5, 10, 15 and 20 nm were deposited by dc-magnetron sputtering on buffered silicon substrates. The static exchange bias field extracted from the magnetization curves increased at the beginning with increasing AFM layer thickness then slightly decreased. The dynamic behavior was studied from the ferromagnetic resonance (FMR) spectra of the samples under external magnetic field in the range 50-750 Oe. The linewidth versus frequency was found to have two distinct slope regions for the samples with high exchange bias values. The damping coefficient at frequencies up to about 7 GHz is found to be generated from the intrinsic linewidth broadening and it has a similar tendency to the exchange bias field with increasing AFM layer thickness. At higher frequencies, the damping coefficient is generated from the extrinsic contributions to the linewidth broadening and its behavior with increasing AFM layer thickness follows the dynamic anisotropy.</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/TMAG.2011.2157321</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Damping ; Dynamic response ; Exact sciences and technology ; exchange bias ; magnetic microwave devices ; Magnetic resonance ; Magnetization ; magnetization processes ; Magnetomechanical effects ; Materials science ; Other topics in materials science ; Perpendicular magnetic anisotropy ; Physics</subject><ispartof>IEEE transactions on magnetics, 2011-10, Vol.47 (10), p.4227-4230</ispartof><rights>2015 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-3a0d7dc1dc857ad36650bbfe287a856d1e4d77d62d38e7e8600d512b6e491c8a3</citedby><cites>FETCH-LOGICAL-c361t-3a0d7dc1dc857ad36650bbfe287a856d1e4d77d62d38e7e8600d512b6e491c8a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6028002$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,796,23930,23931,25140,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6028002$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24730717$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Abdulahad, Faria Basheer</creatorcontrib><creatorcontrib>Hung, Dung-Shung</creatorcontrib><creatorcontrib>Chiu, Yu-Che</creatorcontrib><creatorcontrib>Lee, Shang-Fan</creatorcontrib><title>Exchange Bias Effect on the Relaxation Behavior of the IrMn/NiFe Bilayer System</title><title>IEEE transactions on magnetics</title><addtitle>TMAG</addtitle><description>Magnetization dynamic of exchange bias IrMn/NiFe bilayers system were investigated. Samples with fixed ferromagnetic (FM) layer thickness of 25 nm and antiferromagnetic (AFM) layer thickness t AFM of 5, 10, 15 and 20 nm were deposited by dc-magnetron sputtering on buffered silicon substrates. The static exchange bias field extracted from the magnetization curves increased at the beginning with increasing AFM layer thickness then slightly decreased. The dynamic behavior was studied from the ferromagnetic resonance (FMR) spectra of the samples under external magnetic field in the range 50-750 Oe. The linewidth versus frequency was found to have two distinct slope regions for the samples with high exchange bias values. The damping coefficient at frequencies up to about 7 GHz is found to be generated from the intrinsic linewidth broadening and it has a similar tendency to the exchange bias field with increasing AFM layer thickness. At higher frequencies, the damping coefficient is generated from the extrinsic contributions to the linewidth broadening and its behavior with increasing AFM layer thickness follows the dynamic anisotropy.</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Damping</subject><subject>Dynamic response</subject><subject>Exact sciences and technology</subject><subject>exchange bias</subject><subject>magnetic microwave devices</subject><subject>Magnetic resonance</subject><subject>Magnetization</subject><subject>magnetization processes</subject><subject>Magnetomechanical effects</subject><subject>Materials science</subject><subject>Other topics in materials science</subject><subject>Perpendicular magnetic anisotropy</subject><subject>Physics</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEFPwkAQhTdGExH9AcZLLx4LM7vt7vYIBJAEJFE8N8vuVGpKS7qNgX9vK4TT5OW9bw4fY88IA0RIhpvVaD7ggDjgGCvB8Yb1MIkwBJDJLesBoA6TSEb37MH7nzZGMUKPradHuzPlNwXj3PhgmmVkm6Aqg2ZHwQcV5miavI1j2pnfvKqDKvuvFvWqHL7ns44rzInq4PPkG9o_srvMFJ6eLrfPvmbTzeQtXK7ni8loGVohsQmFAaecRWd1rIwTUsaw3WbEtTI6lg4pcko5yZ3QpEhLABcj30qKErTaiD7D819bV97XlKWHOt-b-pQipJ2RtDOSdkbSi5GWeT0zB-OtKbLalDb3V5BHSoBC1e5ezruciK61BK4BuPgD9CJoow</recordid><startdate>20111001</startdate><enddate>20111001</enddate><creator>Abdulahad, Faria Basheer</creator><creator>Hung, Dung-Shung</creator><creator>Chiu, Yu-Che</creator><creator>Lee, Shang-Fan</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20111001</creationdate><title>Exchange Bias Effect on the Relaxation Behavior of the IrMn/NiFe Bilayer System</title><author>Abdulahad, Faria Basheer ; Hung, Dung-Shung ; Chiu, Yu-Che ; Lee, Shang-Fan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-3a0d7dc1dc857ad36650bbfe287a856d1e4d77d62d38e7e8600d512b6e491c8a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Damping</topic><topic>Dynamic response</topic><topic>Exact sciences and technology</topic><topic>exchange bias</topic><topic>magnetic microwave devices</topic><topic>Magnetic resonance</topic><topic>Magnetization</topic><topic>magnetization processes</topic><topic>Magnetomechanical effects</topic><topic>Materials science</topic><topic>Other topics in materials science</topic><topic>Perpendicular magnetic anisotropy</topic><topic>Physics</topic><toplevel>online_resources</toplevel><creatorcontrib>Abdulahad, Faria Basheer</creatorcontrib><creatorcontrib>Hung, Dung-Shung</creatorcontrib><creatorcontrib>Chiu, Yu-Che</creatorcontrib><creatorcontrib>Lee, Shang-Fan</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE transactions on magnetics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Abdulahad, Faria Basheer</au><au>Hung, Dung-Shung</au><au>Chiu, Yu-Che</au><au>Lee, Shang-Fan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Exchange Bias Effect on the Relaxation Behavior of the IrMn/NiFe Bilayer System</atitle><jtitle>IEEE transactions on magnetics</jtitle><stitle>TMAG</stitle><date>2011-10-01</date><risdate>2011</risdate><volume>47</volume><issue>10</issue><spage>4227</spage><epage>4230</epage><pages>4227-4230</pages><issn>0018-9464</issn><eissn>1941-0069</eissn><coden>IEMGAQ</coden><abstract>Magnetization dynamic of exchange bias IrMn/NiFe bilayers system were investigated. Samples with fixed ferromagnetic (FM) layer thickness of 25 nm and antiferromagnetic (AFM) layer thickness t AFM of 5, 10, 15 and 20 nm were deposited by dc-magnetron sputtering on buffered silicon substrates. The static exchange bias field extracted from the magnetization curves increased at the beginning with increasing AFM layer thickness then slightly decreased. The dynamic behavior was studied from the ferromagnetic resonance (FMR) spectra of the samples under external magnetic field in the range 50-750 Oe. The linewidth versus frequency was found to have two distinct slope regions for the samples with high exchange bias values. The damping coefficient at frequencies up to about 7 GHz is found to be generated from the intrinsic linewidth broadening and it has a similar tendency to the exchange bias field with increasing AFM layer thickness. At higher frequencies, the damping coefficient is generated from the extrinsic contributions to the linewidth broadening and its behavior with increasing AFM layer thickness follows the dynamic anisotropy.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMAG.2011.2157321</doi><tpages>4</tpages></addata></record> |
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| subjects | Cross-disciplinary physics: materials science rheology Damping Dynamic response Exact sciences and technology exchange bias magnetic microwave devices Magnetic resonance Magnetization magnetization processes Magnetomechanical effects Materials science Other topics in materials science Perpendicular magnetic anisotropy Physics |
| title | Exchange Bias Effect on the Relaxation Behavior of the IrMn/NiFe Bilayer System |
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