Reversal Mechanism of Exchange-Biased CoFeB/IrMn Bilayers Observed by Lorentz Electron Microscopy
The magnetization reversal mechanism of exchange-biased thin layers with different antiferromagnetic (AFM) layer thicknesses has been investigated using Lorentz transmission electron microscopy. The polycrystalline IrMn and amorphous CoFeB bilayers exhibit unidirectional anisotropy, which was induce...
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| Veröffentlicht in: | IEEE transactions on magnetics 2009-10, Vol.45 (10), p.3873-3876 |
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| creator | Kovacs, A. Kohn, A. Dean, J. Schrefl, T. Zeltser, A. Carey, M.J. |
| description | The magnetization reversal mechanism of exchange-biased thin layers with different antiferromagnetic (AFM) layer thicknesses has been investigated using Lorentz transmission electron microscopy. The polycrystalline IrMn and amorphous CoFeB bilayers exhibit unidirectional anisotropy, which was induced by field annealing. Lorentz analyses revealed that the magnetic moments rotate away from the unidirectional axis before reversal, when the magnetic field was applied collinear to the unidirectional anisotropy direction. No asymmetry of the reversal process was found in these layers according to the vibrating sample magnetometry and electron microscopy observation. Small ( |
| doi_str_mv | 10.1109/TMAG.2009.2024900 |
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The polycrystalline IrMn and amorphous CoFeB bilayers exhibit unidirectional anisotropy, which was induced by field annealing. Lorentz analyses revealed that the magnetic moments rotate away from the unidirectional axis before reversal, when the magnetic field was applied collinear to the unidirectional anisotropy direction. No asymmetry of the reversal process was found in these layers according to the vibrating sample magnetometry and electron microscopy observation. Small ( <10 mum in diameter) 360deg domain-wall loops act as nucleation sites for reversal and disappear during the reversal. A continuous rotation of magnetic moments was observed when the magnetic field was applied perpendicular to the unidirectional axis. Minor intermixing at the interface and structural defects such as interface roughness, grain boundaries, and stacking faults were identified as possible sources of magnetic frustration and uncompensated spins in the IrMn layer that contribute to exchange bias.</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/TMAG.2009.2024900</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Amorphous magnetic materials ; Anisotropic magnetoresistance ; Anisotropy ; Antiferromagnetic (AFM) materials ; Atomic force microscopy ; Electron microscopy ; Exchange ; Grain boundaries ; Magnetic anisotropy ; Magnetic fields ; Magnetic force microscopy ; Magnetic moment ; Magnetic moments ; Magnetism ; Magnetization reversal ; Nucleation ; Perpendicular magnetic anisotropy ; Stacking faults ; thin film devices</subject><ispartof>IEEE transactions on magnetics, 2009-10, Vol.45 (10), p.3873-3876</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c325t-e69df7f55922305bb54424b5950433fe5d84abc7f92ffb273c5cc3cb6d3ec8d3</citedby><cites>FETCH-LOGICAL-c325t-e69df7f55922305bb54424b5950433fe5d84abc7f92ffb273c5cc3cb6d3ec8d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5257385$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5257385$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kovacs, A.</creatorcontrib><creatorcontrib>Kohn, A.</creatorcontrib><creatorcontrib>Dean, J.</creatorcontrib><creatorcontrib>Schrefl, T.</creatorcontrib><creatorcontrib>Zeltser, A.</creatorcontrib><creatorcontrib>Carey, M.J.</creatorcontrib><title>Reversal Mechanism of Exchange-Biased CoFeB/IrMn Bilayers Observed by Lorentz Electron Microscopy</title><title>IEEE transactions on magnetics</title><addtitle>TMAG</addtitle><description>The magnetization reversal mechanism of exchange-biased thin layers with different antiferromagnetic (AFM) layer thicknesses has been investigated using Lorentz transmission electron microscopy. The polycrystalline IrMn and amorphous CoFeB bilayers exhibit unidirectional anisotropy, which was induced by field annealing. Lorentz analyses revealed that the magnetic moments rotate away from the unidirectional axis before reversal, when the magnetic field was applied collinear to the unidirectional anisotropy direction. No asymmetry of the reversal process was found in these layers according to the vibrating sample magnetometry and electron microscopy observation. Small ( <10 mum in diameter) 360deg domain-wall loops act as nucleation sites for reversal and disappear during the reversal. A continuous rotation of magnetic moments was observed when the magnetic field was applied perpendicular to the unidirectional axis. Minor intermixing at the interface and structural defects such as interface roughness, grain boundaries, and stacking faults were identified as possible sources of magnetic frustration and uncompensated spins in the IrMn layer that contribute to exchange bias.</description><subject>Amorphous magnetic materials</subject><subject>Anisotropic magnetoresistance</subject><subject>Anisotropy</subject><subject>Antiferromagnetic (AFM) materials</subject><subject>Atomic force microscopy</subject><subject>Electron microscopy</subject><subject>Exchange</subject><subject>Grain boundaries</subject><subject>Magnetic anisotropy</subject><subject>Magnetic fields</subject><subject>Magnetic force microscopy</subject><subject>Magnetic moment</subject><subject>Magnetic moments</subject><subject>Magnetism</subject><subject>Magnetization reversal</subject><subject>Nucleation</subject><subject>Perpendicular magnetic anisotropy</subject><subject>Stacking faults</subject><subject>thin film devices</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE9PwjAYhxujiYh-AOOl8eRl2L_begQCSAIhMdybrnurI2PFFoj46d0C8eClzS99fs37Pgg9UjKglKjX9XI4GzBCVHswoQi5Qj2qBE0ISdU16hFC80SJVNyiuxg3bRSSkh4y73CEEE2Nl2A_TVPFLfYOT7678AHJqDIRSjz2Uxi9zsOywaOqNqe2gldFhHBsH4sTXvgAzf4HT2qw--AbvKxs8NH63eke3ThTR3i43H20nk7W47dksZrNx8NFYjmT-wRSVbrMSakY40QWhRSCiUIqSQTnDmSZC1PYzCnmXMEybqW13BZpycHmJe-jl_O3u-C_DhD3eltFC3VtGvCHqClPJeVZTlmLPv9DN_4QmnY4nctUtQKzDqJnqNsjBnB6F6qtCSdNie6U60657pTri_K283TuVADwx0smM55L_gtTO3yd</recordid><startdate>200910</startdate><enddate>200910</enddate><creator>Kovacs, A.</creator><creator>Kohn, A.</creator><creator>Dean, J.</creator><creator>Schrefl, T.</creator><creator>Zeltser, A.</creator><creator>Carey, M.J.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>200910</creationdate><title>Reversal Mechanism of Exchange-Biased CoFeB/IrMn Bilayers Observed by Lorentz Electron Microscopy</title><author>Kovacs, A. ; Kohn, A. ; Dean, J. ; Schrefl, T. ; Zeltser, A. ; Carey, M.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c325t-e69df7f55922305bb54424b5950433fe5d84abc7f92ffb273c5cc3cb6d3ec8d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Amorphous magnetic materials</topic><topic>Anisotropic magnetoresistance</topic><topic>Anisotropy</topic><topic>Antiferromagnetic (AFM) materials</topic><topic>Atomic force microscopy</topic><topic>Electron microscopy</topic><topic>Exchange</topic><topic>Grain boundaries</topic><topic>Magnetic anisotropy</topic><topic>Magnetic fields</topic><topic>Magnetic force microscopy</topic><topic>Magnetic moment</topic><topic>Magnetic moments</topic><topic>Magnetism</topic><topic>Magnetization reversal</topic><topic>Nucleation</topic><topic>Perpendicular magnetic anisotropy</topic><topic>Stacking faults</topic><topic>thin film devices</topic><toplevel>online_resources</toplevel><creatorcontrib>Kovacs, A.</creatorcontrib><creatorcontrib>Kohn, A.</creatorcontrib><creatorcontrib>Dean, J.</creatorcontrib><creatorcontrib>Schrefl, T.</creatorcontrib><creatorcontrib>Zeltser, A.</creatorcontrib><creatorcontrib>Carey, M.J.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on magnetics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kovacs, A.</au><au>Kohn, A.</au><au>Dean, J.</au><au>Schrefl, T.</au><au>Zeltser, A.</au><au>Carey, M.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reversal Mechanism of Exchange-Biased CoFeB/IrMn Bilayers Observed by Lorentz Electron Microscopy</atitle><jtitle>IEEE transactions on magnetics</jtitle><stitle>TMAG</stitle><date>2009-10</date><risdate>2009</risdate><volume>45</volume><issue>10</issue><spage>3873</spage><epage>3876</epage><pages>3873-3876</pages><issn>0018-9464</issn><eissn>1941-0069</eissn><coden>IEMGAQ</coden><abstract>The magnetization reversal mechanism of exchange-biased thin layers with different antiferromagnetic (AFM) layer thicknesses has been investigated using Lorentz transmission electron microscopy. The polycrystalline IrMn and amorphous CoFeB bilayers exhibit unidirectional anisotropy, which was induced by field annealing. Lorentz analyses revealed that the magnetic moments rotate away from the unidirectional axis before reversal, when the magnetic field was applied collinear to the unidirectional anisotropy direction. No asymmetry of the reversal process was found in these layers according to the vibrating sample magnetometry and electron microscopy observation. Small ( <10 mum in diameter) 360deg domain-wall loops act as nucleation sites for reversal and disappear during the reversal. A continuous rotation of magnetic moments was observed when the magnetic field was applied perpendicular to the unidirectional axis. Minor intermixing at the interface and structural defects such as interface roughness, grain boundaries, and stacking faults were identified as possible sources of magnetic frustration and uncompensated spins in the IrMn layer that contribute to exchange bias.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TMAG.2009.2024900</doi><tpages>4</tpages></addata></record> |
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| subjects | Amorphous magnetic materials Anisotropic magnetoresistance Anisotropy Antiferromagnetic (AFM) materials Atomic force microscopy Electron microscopy Exchange Grain boundaries Magnetic anisotropy Magnetic fields Magnetic force microscopy Magnetic moment Magnetic moments Magnetism Magnetization reversal Nucleation Perpendicular magnetic anisotropy Stacking faults thin film devices |
| title | Reversal Mechanism of Exchange-Biased CoFeB/IrMn Bilayers Observed by Lorentz Electron Microscopy |
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