Spin-valve and tunnel-valve structures with in situ in-stack bias

The use of in-stack longitudinal magnetic stabilization for spin-valve and tunnel-valve recording head sensors has been investigated. An in-stack ferromagnetic layer pinned with an IrMn antiferromagnet is used to magnetostatically stabilize the free layer by flux closure. The use of IrMn with lower...

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Veröffentlicht in:	IEEE transactions on magnetics 2002-09, Vol.38 (5), p.2286-2288
Hauptverfasser:	Childress, J.R., Ho, M.K., Fontana, R.E., Carey, M.J., Rice, P.M., Gurney, B.A., Tsang, C.H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Insulation life Magnetic devices Magnetic flux Magnetic heads Magnetic recording Magnetic sensors Magnetic separation Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.) domain-motion devices, etc Magnetism Magnetosphere Magnetostatics Perpendicular magnetic recording Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stability
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