Non-destructive read out operation of SFQ memory cells: Simulations and experimental results

Non-destructive read out operation of SFQ memory cells: Simulations and experimental results

Single flux quantum two junction interferometers appear as attractive memory cells for constituting dense and low dissipating arrays. In this paper an investigation of cell parameters leading to Non-Destructive Read Out (NDRO) operation and non volatile storage is presented. Basic requirements are d...

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Veröffentlicht in:IEEE transactions on magnetics 1983-05, Vol.19 (3), p.1262-1265
Hauptverfasser: Matheron, G., Migny, Ph
Format: Artikel
Sprache:eng
Schlagworte:
Circuit analysis computing
Fabrication
Frequency
Interferometers
Laboratories
Nonvolatile memory
Prototypes
Statistical analysis
Switches
Voltage
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container_title IEEE transactions on magnetics
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creator Matheron, G.
Migny, Ph
description Single flux quantum two junction interferometers appear as attractive memory cells for constituting dense and low dissipating arrays. In this paper an investigation of cell parameters leading to Non-Destructive Read Out (NDRO) operation and non volatile storage is presented. Basic requirements are defined, various possible designs are studied through static and dynamic simulations, experimental results for one of them are given. Finally, memory array concepts involving statistical analysis on electrical parameters spreads are proposed.
doi_str_mv 10.1109/TMAG.1983.1062344
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subjects Circuit analysis computing
Fabrication
Frequency
Interferometers
Laboratories
Nonvolatile memory
Prototypes
Statistical analysis
Switches
Voltage
title Non-destructive read out operation of SFQ memory cells: Simulations and experimental results
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