Design, Fabrication, and Characterization of a D-Band Bolometric Power Sensor

This article presents the design, fabrication, and characterization of a D-band (110-170 GHz) bolometric power sensor, used for millimeter-wave metrology. This sensor type is new thin-film-based sensor, which consists of a multilayer chip embedded in a silicon substrate as a microwave absorber. The...

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Veröffentlicht in:	IEEE transactions on instrumentation and measurement 2022, Vol.71, p.1-9
Hauptverfasser:	Salek, Milan, Celep, Murat, Weimann, Thomas, Stokes, Daniel, Shang, Xiaobang, Phung, Gia Ngoc, Kuhlmann, Karsten, Skinner, James, Wang, Yi
Format:	Artikel
Sprache:	eng
Schlagworte:	Bolometers Bolometric characterization Conductivity D-band Frequencies Frequency response metrology Microwave absorbers millimeter wave Millimeter waves Multilayers Platinum power sensor Resistance Sensors Silicon Silicon substrates Temperature sensors Thermal conductivity Thermal resistance Thin films WR 6.5 waveguide flange
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