Design, Fabrication, and Characterization of a D-Band Bolometric Power Sensor
This article presents the design, fabrication, and characterization of a D-band (110-170 GHz) bolometric power sensor, used for millimeter-wave metrology. This sensor type is new thin-film-based sensor, which consists of a multilayer chip embedded in a silicon substrate as a microwave absorber. The...
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| Veröffentlicht in: | IEEE transactions on instrumentation and measurement 2022, Vol.71, p.1-9 |
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| creator | Salek, Milan Celep, Murat Weimann, Thomas Stokes, Daniel Shang, Xiaobang Phung, Gia Ngoc Kuhlmann, Karsten Skinner, James Wang, Yi |
| description | This article presents the design, fabrication, and characterization of a D-band (110-170 GHz) bolometric power sensor, used for millimeter-wave metrology. This sensor type is new thin-film-based sensor, which consists of a multilayer chip embedded in a silicon substrate as a microwave absorber. The sensor demonstrates reasonable performance with a return loss of better than 15 dB across the entire D-band and the rise and fall times better than 1.8 ms. The sensor achieves high power linearity between −10 and +8 dBm. Frequency response of the sensor was measured, and its flatness changes no more than 20% across the frequency band. Furthermore, this power sensor has been characterized in the microcalorimeter, and an effective efficiency of over 90% could be achieved. For the first time, the design, fabrication, and characterization of a novel power sensor prototype with excellent performance at D-band are presented. |
| doi_str_mv | 10.1109/TIM.2022.3159009 |
| format | Article |
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This sensor type is new thin-film-based sensor, which consists of a multilayer chip embedded in a silicon substrate as a microwave absorber. The sensor demonstrates reasonable performance with a return loss of better than 15 dB across the entire D-band and the rise and fall times better than 1.8 ms. The sensor achieves high power linearity between −10 and +8 dBm. Frequency response of the sensor was measured, and its flatness changes no more than 20% across the frequency band. Furthermore, this power sensor has been characterized in the microcalorimeter, and an effective efficiency of over 90% could be achieved. For the first time, the design, fabrication, and characterization of a novel power sensor prototype with excellent performance at D-band are presented.</description><identifier>ISSN: 0018-9456</identifier><identifier>EISSN: 1557-9662</identifier><identifier>DOI: 10.1109/TIM.2022.3159009</identifier><identifier>CODEN: IEIMAO</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bolometers ; Bolometric ; characterization ; Conductivity ; D-band ; Frequencies ; Frequency response ; metrology ; Microwave absorbers ; millimeter wave ; Millimeter waves ; Multilayers ; Platinum ; power sensor ; Resistance ; Sensors ; Silicon ; Silicon substrates ; Temperature sensors ; Thermal conductivity ; Thermal resistance ; Thin films ; WR 6.5 waveguide flange</subject><ispartof>IEEE transactions on instrumentation and measurement, 2022, Vol.71, p.1-9</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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For the first time, the design, fabrication, and characterization of a novel power sensor prototype with excellent performance at D-band are presented.</description><subject>Bolometers</subject><subject>Bolometric</subject><subject>characterization</subject><subject>Conductivity</subject><subject>D-band</subject><subject>Frequencies</subject><subject>Frequency response</subject><subject>metrology</subject><subject>Microwave absorbers</subject><subject>millimeter wave</subject><subject>Millimeter waves</subject><subject>Multilayers</subject><subject>Platinum</subject><subject>power sensor</subject><subject>Resistance</subject><subject>Sensors</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>Temperature sensors</subject><subject>Thermal conductivity</subject><subject>Thermal resistance</subject><subject>Thin films</subject><subject>WR 6.5 waveguide flange</subject><issn>0018-9456</issn><issn>1557-9662</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1PAjEQhhujiYjeTbw08eri9Ht7FBAlgWginpvubleXwBbbJQZ_vUWIp8nMvO98PAhdExgQAvp-MZ0PKFA6YERoAH2CekQIlWkp6SnqAZA801zIc3QR4xIAlOSqh-ZjF5uP9g5PbBGa0naNT4ltKzz6tMGWnQvNz18V-xpbPM6G--bQr_zadcmBX_23C_jNtdGHS3RW21V0V8fYR--Tx8XoOZu9PE1HD7OsZIx1GSW60MSyirGqUlSLwsqC27LOKylA6SKvGWeK5XmhlcxdblWRfmQAHCpNHeuj28PcTfBfWxc7s_Tb0KaVhkouKBdCsKSCg6oMPsbgarMJzdqGnSFg9tBMgmb20MwRWrLcHCyNc-5frlU6O130C1q0ZfI</recordid><startdate>2022</startdate><enddate>2022</enddate><creator>Salek, Milan</creator><creator>Celep, Murat</creator><creator>Weimann, Thomas</creator><creator>Stokes, Daniel</creator><creator>Shang, Xiaobang</creator><creator>Phung, Gia Ngoc</creator><creator>Kuhlmann, Karsten</creator><creator>Skinner, James</creator><creator>Wang, Yi</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Bolometers Bolometric characterization Conductivity D-band Frequencies Frequency response metrology Microwave absorbers millimeter wave Millimeter waves Multilayers Platinum power sensor Resistance Sensors Silicon Silicon substrates Temperature sensors Thermal conductivity Thermal resistance Thin films WR 6.5 waveguide flange |
| title | Design, Fabrication, and Characterization of a D-Band Bolometric Power Sensor |
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