A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility
In this paper, a physical model for a SiC Junction Field Effect Transistor (JFET) is presented. The novel feature of the model is that the mobility dependence on both temperature and electric field is taken into account. This is particularly important for high-current power devices where the maximum...
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| Veröffentlicht in: | IEEE transactions on industry applications 2011-01, Vol.47 (1), p.199-211 |
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| container_title | IEEE transactions on industry applications |
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| creator | Platania, E Zhiyang Chen Chimento, Filippo Grekov, Alexander E Ruiyun Fu Liqing Lu Raciti, Angelo Hudgins, Jerry L Mantooth, H A Sheridan, D C Casady, J Santi, Enrico |
| description | In this paper, a physical model for a SiC Junction Field Effect Transistor (JFET) is presented. The novel feature of the model is that the mobility dependence on both temperature and electric field is taken into account. This is particularly important for high-current power devices where the maximum conduction current is limited by drift velocity saturation in the channel. The model equations are described in detail, emphasizing the differences introduced by the field-dependent mobility model. The model is then implemented in Pspice. Both static and dynamic simulation results are given. The results are validated with experimental results under static conditions and under resistive and inductive switching conditions. |
| doi_str_mv | 10.1109/TIA.2010.2090843 |
| format | Article |
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The novel feature of the model is that the mobility dependence on both temperature and electric field is taken into account. This is particularly important for high-current power devices where the maximum conduction current is limited by drift velocity saturation in the channel. The model equations are described in detail, emphasizing the differences introduced by the field-dependent mobility model. The model is then implemented in Pspice. Both static and dynamic simulation results are given. The results are validated with experimental results under static conditions and under resistive and inductive switching conditions.</description><identifier>ISSN: 0093-9994</identifier><identifier>EISSN: 1939-9367</identifier><identifier>DOI: 10.1109/TIA.2010.2090843</identifier><identifier>CODEN: ITIACR</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Accounting ; Channels ; Electric fields ; Electrical junctions ; Equations ; Field-dependent mobility ; JFET ; JFETs ; junction field effect transistor (JFET) ; Logic gates ; Mathematical analysis ; Mathematical model ; Mathematical models ; physics-based model ; Saturation ; Silicon ; Silicon carbide ; silicon carbide (SiC)</subject><ispartof>IEEE transactions on industry applications, 2011-01, Vol.47 (1), p.199-211</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jan/Feb 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c369t-c05a12519727a1df337b4c27fdfcd1b85138ebf7155764e0fc4f7d4741928d733</citedby><cites>FETCH-LOGICAL-c369t-c05a12519727a1df337b4c27fdfcd1b85138ebf7155764e0fc4f7d4741928d733</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5620973$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27926,27927,54760</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5620973$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Platania, E</creatorcontrib><creatorcontrib>Zhiyang Chen</creatorcontrib><creatorcontrib>Chimento, Filippo</creatorcontrib><creatorcontrib>Grekov, Alexander E</creatorcontrib><creatorcontrib>Ruiyun Fu</creatorcontrib><creatorcontrib>Liqing Lu</creatorcontrib><creatorcontrib>Raciti, Angelo</creatorcontrib><creatorcontrib>Hudgins, Jerry L</creatorcontrib><creatorcontrib>Mantooth, H A</creatorcontrib><creatorcontrib>Sheridan, D C</creatorcontrib><creatorcontrib>Casady, J</creatorcontrib><creatorcontrib>Santi, Enrico</creatorcontrib><title>A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility</title><title>IEEE transactions on industry applications</title><addtitle>TIA</addtitle><description>In this paper, a physical model for a SiC Junction Field Effect Transistor (JFET) is presented. The novel feature of the model is that the mobility dependence on both temperature and electric field is taken into account. This is particularly important for high-current power devices where the maximum conduction current is limited by drift velocity saturation in the channel. The model equations are described in detail, emphasizing the differences introduced by the field-dependent mobility model. The model is then implemented in Pspice. Both static and dynamic simulation results are given. The results are validated with experimental results under static conditions and under resistive and inductive switching conditions.</description><subject>Accounting</subject><subject>Channels</subject><subject>Electric fields</subject><subject>Electrical junctions</subject><subject>Equations</subject><subject>Field-dependent mobility</subject><subject>JFET</subject><subject>JFETs</subject><subject>junction field effect transistor (JFET)</subject><subject>Logic gates</subject><subject>Mathematical analysis</subject><subject>Mathematical model</subject><subject>Mathematical models</subject><subject>physics-based model</subject><subject>Saturation</subject><subject>Silicon</subject><subject>Silicon carbide</subject><subject>silicon carbide (SiC)</subject><issn>0093-9994</issn><issn>1939-9367</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkDFPwzAUhC0EEqWwI7FELEwuduzE8VhKC0VFINHOVmI_g6s0KXYy9N_j0oqB6enpvjudDqFrSkaUEnm_nI9HKYlfSiQpODtBAyqZxJLl4hQNCJEMSyn5OboIYU0I5RnlA7QaJ-9fu-B0wA9lAJO8tgbqxLY-KZMPN0leZtNlMta67ZvONZ-_yrQG3Xmn8cxBbfAjbKEx0HTRXLnadbtLdGbLOsDV8Q7RKsZMnvHi7Wk-GS-wZrnssCZZSdOMSpGKkhrLmKi4ToU1VhtaFRllBVRW0CwTOQdiNbfCcMGpTAsjGBuiu0Pu1rffPYRObVzQUNdlA20fVJHTjEnBZCRv_5HrtvdNLKcKnstUCFlEiBwg7dsQPFi19W5T-p2iRO1XVnFltV9ZHVeOlpuDxQHAH57lUY_9fgDY0XXf</recordid><startdate>201101</startdate><enddate>201101</enddate><creator>Platania, E</creator><creator>Zhiyang Chen</creator><creator>Chimento, Filippo</creator><creator>Grekov, Alexander E</creator><creator>Ruiyun Fu</creator><creator>Liqing Lu</creator><creator>Raciti, Angelo</creator><creator>Hudgins, Jerry L</creator><creator>Mantooth, H A</creator><creator>Sheridan, D C</creator><creator>Casady, J</creator><creator>Santi, Enrico</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| source | IEEE Electronic Library (IEL) |
| subjects | Accounting Channels Electric fields Electrical junctions Equations Field-dependent mobility JFET JFETs junction field effect transistor (JFET) Logic gates Mathematical analysis Mathematical model Mathematical models physics-based model Saturation Silicon Silicon carbide silicon carbide (SiC) |
| title | A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility |
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