Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN

This article discusses the electrical stability of MOS structures on n- and p-type GaN for two different dielectrics, AlON and Al2O3, deposited by atomic layer deposition (ALD). Threshold voltage hysteresis was evaluated by means of capacitance-voltage (C-V) double sweep measurements, performed on M...

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Veröffentlicht in:	IEEE transactions on electron devices 2024-09, Vol.71 (9), p.5212-5217
Hauptverfasser:	Filho, Walter Goncalez, Borga, Matteo, Geens, Karen, Khan, Md Arif, Cingu, Deepthi, Chatterjee, Urmimala, Decoutere, Stefaan, Knaepen, Werner, Kizir, Seda, Arnou, Panagiota, Bakeroot, Benoit
Format:	Artikel
Sprache:	eng
Schlagworte:	AlON Aluminum oxide Atomic layer epitaxy Atomic properties Capacitors Charge density Dielectrics Electric charge Electric fields Electrons Extreme values Gallium nitrides GaN power devices Hysteresis Leakage current Logic gates Metal oxide semiconductors MOS devices N-type semiconductors Semiconductor device measurement Stability Stability criteria Threshold voltage threshold voltage stability Trapped charge
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