Electrothermal Small-Signal Model of Nanosheet FETs With Zero-Temperature-Coefficient Based Parameters Extraction Method

Nanosheet FET (NSFET) is a promising structure for scaling transistors to the sub-5-nm node. However, the self-heating effect (SHE) impacts device performance at gigahertz frequencies, necessitating the small-signal modeling that accommodates SHE. Thus, an electrothermal coupled small-signal equival...

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Veröffentlicht in:	IEEE transactions on electron devices 2024-07, Vol.71 (7), p.4153-4159
Hauptverfasser:	Lyu, Yaoyang, Chen, Wangyong, Cai, Linlin
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Circuit design Data models Equivalent circuits Field effect transistors High temperature effects Integrated circuit modeling Logic gates Mathematical models Modelling Nanosheet FET (NSFET) Nanosheets Parameter extraction Parameters self-heating effect (SHE) small-signal model thermal network Thermal resistance zero-temperature coefficient (ZTC)
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