Enhanced Performance of AlGaN-Based DUV-LEDs With Passivated Nano-Hole Arrays
In this study, AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) with 0, 3\times3 , and 3\times5 passivated nano-hole arrays have been fabricated, and their photoelectric and thermal performance have been analyzed. The measured results indicate that the leakage current could be ignore...
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| Veröffentlicht in: | IEEE transactions on electron devices 2024-06, Vol.71 (6), p.3722-3726 |
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| container_title | IEEE transactions on electron devices |
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| creator | Li, Zilu Shen, Meng-Chun Lai, Shouqiang Zheng, Lijie Dai, Yurong Lu, Tingwei Lin, Su-Hui Peng, Kangwei Chen, Guolong Chen, Zhong Wu, Tingzhu |
| description | In this study, AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) with 0, 3\times3 , and 3\times5 passivated nano-hole arrays have been fabricated, and their photoelectric and thermal performance have been analyzed. The measured results indicate that the leakage current could be ignored in the DUV-LEDs with passivated nano-hole arrays, and the resistance of the DUV-LEDs decreases as the number of passivated nano-holes increases. In addition, the DUV-LEDs with 3\times5 passivated nano-hole arrays present the highest external quantum efficiency (EQE), which is 13.3% higher than that of the standard DUV-LEDs, due to the synergistic effect of etching damage and enhanced light extraction efficiency (LEE). Moreover, the room temperature EQE of these DUV-LEDs has been analyzed with the ABC + {f} ( {n} ) model. Finally, the results of thermal resistance and surface temperature distribution of these DUV-LEDs indicate that there is little impact on the thermal performance of the device with passivated nano-hole arrays. |
| doi_str_mv | 10.1109/TED.2024.3390656 |
| format | Article |
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The measured results indicate that the leakage current could be ignored in the DUV-LEDs with passivated nano-hole arrays, and the resistance of the DUV-LEDs decreases as the number of passivated nano-holes increases. In addition, the DUV-LEDs with <inline-formula> <tex-math notation="LaTeX">3\times5 </tex-math></inline-formula> passivated nano-hole arrays present the highest external quantum efficiency (EQE), which is 13.3% higher than that of the standard DUV-LEDs, due to the synergistic effect of etching damage and enhanced light extraction efficiency (LEE). Moreover, the room temperature EQE of these DUV-LEDs has been analyzed with the ABC + <inline-formula> <tex-math notation="LaTeX">{f} </tex-math></inline-formula>(<inline-formula> <tex-math notation="LaTeX">{n} </tex-math></inline-formula>) model. Finally, the results of thermal resistance and surface temperature distribution of these DUV-LEDs indicate that there is little impact on the thermal performance of the device with passivated nano-hole arrays.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2024.3390656</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum gallium nitride ; Arrays ; Deep ultraviolet light-emitting diodes (DUV-LEDs) ; Gallium ; Leakage current ; Light emitting diodes ; nano-hole arrays ; Nanobioscience ; Nanoscale devices ; passivation ; Performance enhancement ; Photoelectricity ; Quantum efficiency ; Room temperature ; Synergistic effect ; Temperature distribution ; Thermal resistance ; Ultraviolet radiation ; Wide band gap semiconductors</subject><ispartof>IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3722-3726</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c245t-47efe13b718d023ecdfe185c899f1fbce4719f2bfc754205f0836cc6bffdd1e03</cites><orcidid>0000-0002-1473-2224 ; 0000-0003-0183-5803 ; 0009-0007-2503-4724 ; 0000-0001-9453-6823</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10508719$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10508719$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Li, Zilu</creatorcontrib><creatorcontrib>Shen, Meng-Chun</creatorcontrib><creatorcontrib>Lai, Shouqiang</creatorcontrib><creatorcontrib>Zheng, Lijie</creatorcontrib><creatorcontrib>Dai, Yurong</creatorcontrib><creatorcontrib>Lu, Tingwei</creatorcontrib><creatorcontrib>Lin, Su-Hui</creatorcontrib><creatorcontrib>Peng, Kangwei</creatorcontrib><creatorcontrib>Chen, Guolong</creatorcontrib><creatorcontrib>Chen, Zhong</creatorcontrib><creatorcontrib>Wu, Tingzhu</creatorcontrib><title>Enhanced Performance of AlGaN-Based DUV-LEDs With Passivated Nano-Hole Arrays</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[In this study, AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) with 0, <inline-formula> <tex-math notation="LaTeX">3\times3 </tex-math></inline-formula>, and <inline-formula> <tex-math notation="LaTeX">3\times5 </tex-math></inline-formula> passivated nano-hole arrays have been fabricated, and their photoelectric and thermal performance have been analyzed. The measured results indicate that the leakage current could be ignored in the DUV-LEDs with passivated nano-hole arrays, and the resistance of the DUV-LEDs decreases as the number of passivated nano-holes increases. In addition, the DUV-LEDs with <inline-formula> <tex-math notation="LaTeX">3\times5 </tex-math></inline-formula> passivated nano-hole arrays present the highest external quantum efficiency (EQE), which is 13.3% higher than that of the standard DUV-LEDs, due to the synergistic effect of etching damage and enhanced light extraction efficiency (LEE). Moreover, the room temperature EQE of these DUV-LEDs has been analyzed with the ABC + <inline-formula> <tex-math notation="LaTeX">{f} </tex-math></inline-formula>(<inline-formula> <tex-math notation="LaTeX">{n} </tex-math></inline-formula>) model. Finally, the results of thermal resistance and surface temperature distribution of these DUV-LEDs indicate that there is little impact on the thermal performance of the device with passivated nano-hole arrays.]]></description><subject>Aluminum gallium nitride</subject><subject>Arrays</subject><subject>Deep ultraviolet light-emitting diodes (DUV-LEDs)</subject><subject>Gallium</subject><subject>Leakage current</subject><subject>Light emitting diodes</subject><subject>nano-hole arrays</subject><subject>Nanobioscience</subject><subject>Nanoscale devices</subject><subject>passivation</subject><subject>Performance enhancement</subject><subject>Photoelectricity</subject><subject>Quantum efficiency</subject><subject>Room temperature</subject><subject>Synergistic effect</subject><subject>Temperature distribution</subject><subject>Thermal resistance</subject><subject>Ultraviolet radiation</subject><subject>Wide band gap semiconductors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkM1PAjEQxRujiYjePXjYxHNx-rm7R4QVTBA5gB6bbrcNS2AX28WE_94SOHiavLz3ZiY_hB4JDAiB_GVZjAcUKB8wloMU8gr1iBApziWX16gHQDKcs4zdorsQNlFKzmkPfRTNWjfGVsnCetf63UkkrUuG24me41cdojVefeFZMQ7Jd92tk4UOof7VXTTmumnxtN3aZOi9PoZ7dOP0NtiHy-yj1VuxHE3x7HPyPhrOsKFcdJin1lnCypRkFVBmTRVlJkyW54640liektzR0plUcArCQcakMbJ0rqqIBdZHz-e9e9_-HGzo1KY9-CaeVAxELihIYDEF55TxbQjeOrX39U77oyKgTtBUhKZO0NQFWqw8nSu1tfZfXEAWX2J_zflm5A</recordid><startdate>20240601</startdate><enddate>20240601</enddate><creator>Li, Zilu</creator><creator>Shen, Meng-Chun</creator><creator>Lai, Shouqiang</creator><creator>Zheng, Lijie</creator><creator>Dai, Yurong</creator><creator>Lu, Tingwei</creator><creator>Lin, Su-Hui</creator><creator>Peng, Kangwei</creator><creator>Chen, Guolong</creator><creator>Chen, Zhong</creator><creator>Wu, Tingzhu</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-1473-2224</orcidid><orcidid>https://orcid.org/0000-0003-0183-5803</orcidid><orcidid>https://orcid.org/0009-0007-2503-4724</orcidid><orcidid>https://orcid.org/0000-0001-9453-6823</orcidid></search><sort><creationdate>20240601</creationdate><title>Enhanced Performance of AlGaN-Based DUV-LEDs With Passivated Nano-Hole Arrays</title><author>Li, Zilu ; Shen, Meng-Chun ; Lai, Shouqiang ; Zheng, Lijie ; Dai, Yurong ; Lu, Tingwei ; Lin, Su-Hui ; Peng, Kangwei ; Chen, Guolong ; Chen, Zhong ; Wu, Tingzhu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c245t-47efe13b718d023ecdfe185c899f1fbce4719f2bfc754205f0836cc6bffdd1e03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Aluminum gallium nitride</topic><topic>Arrays</topic><topic>Deep ultraviolet light-emitting diodes (DUV-LEDs)</topic><topic>Gallium</topic><topic>Leakage current</topic><topic>Light emitting diodes</topic><topic>nano-hole arrays</topic><topic>Nanobioscience</topic><topic>Nanoscale devices</topic><topic>passivation</topic><topic>Performance enhancement</topic><topic>Photoelectricity</topic><topic>Quantum efficiency</topic><topic>Room temperature</topic><topic>Synergistic effect</topic><topic>Temperature distribution</topic><topic>Thermal resistance</topic><topic>Ultraviolet radiation</topic><topic>Wide band gap semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Zilu</creatorcontrib><creatorcontrib>Shen, Meng-Chun</creatorcontrib><creatorcontrib>Lai, Shouqiang</creatorcontrib><creatorcontrib>Zheng, Lijie</creatorcontrib><creatorcontrib>Dai, Yurong</creatorcontrib><creatorcontrib>Lu, Tingwei</creatorcontrib><creatorcontrib>Lin, Su-Hui</creatorcontrib><creatorcontrib>Peng, Kangwei</creatorcontrib><creatorcontrib>Chen, Guolong</creatorcontrib><creatorcontrib>Chen, Zhong</creatorcontrib><creatorcontrib>Wu, Tingzhu</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Li, Zilu</au><au>Shen, Meng-Chun</au><au>Lai, Shouqiang</au><au>Zheng, Lijie</au><au>Dai, Yurong</au><au>Lu, Tingwei</au><au>Lin, Su-Hui</au><au>Peng, Kangwei</au><au>Chen, Guolong</au><au>Chen, Zhong</au><au>Wu, Tingzhu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced Performance of AlGaN-Based DUV-LEDs With Passivated Nano-Hole Arrays</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2024-06-01</date><risdate>2024</risdate><volume>71</volume><issue>6</issue><spage>3722</spage><epage>3726</epage><pages>3722-3726</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract><![CDATA[In this study, AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) with 0, <inline-formula> <tex-math notation="LaTeX">3\times3 </tex-math></inline-formula>, and <inline-formula> <tex-math notation="LaTeX">3\times5 </tex-math></inline-formula> passivated nano-hole arrays have been fabricated, and their photoelectric and thermal performance have been analyzed. The measured results indicate that the leakage current could be ignored in the DUV-LEDs with passivated nano-hole arrays, and the resistance of the DUV-LEDs decreases as the number of passivated nano-holes increases. In addition, the DUV-LEDs with <inline-formula> <tex-math notation="LaTeX">3\times5 </tex-math></inline-formula> passivated nano-hole arrays present the highest external quantum efficiency (EQE), which is 13.3% higher than that of the standard DUV-LEDs, due to the synergistic effect of etching damage and enhanced light extraction efficiency (LEE). Moreover, the room temperature EQE of these DUV-LEDs has been analyzed with the ABC + <inline-formula> <tex-math notation="LaTeX">{f} </tex-math></inline-formula>(<inline-formula> <tex-math notation="LaTeX">{n} </tex-math></inline-formula>) model. Finally, the results of thermal resistance and surface temperature distribution of these DUV-LEDs indicate that there is little impact on the thermal performance of the device with passivated nano-hole arrays.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2024.3390656</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-1473-2224</orcidid><orcidid>https://orcid.org/0000-0003-0183-5803</orcidid><orcidid>https://orcid.org/0009-0007-2503-4724</orcidid><orcidid>https://orcid.org/0000-0001-9453-6823</orcidid></addata></record> |
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| source | IEEE |
| subjects | Aluminum gallium nitride Arrays Deep ultraviolet light-emitting diodes (DUV-LEDs) Gallium Leakage current Light emitting diodes nano-hole arrays Nanobioscience Nanoscale devices passivation Performance enhancement Photoelectricity Quantum efficiency Room temperature Synergistic effect Temperature distribution Thermal resistance Ultraviolet radiation Wide band gap semiconductors |
| title | Enhanced Performance of AlGaN-Based DUV-LEDs With Passivated Nano-Hole Arrays |
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