Polarization and Reliability Enhancement for Ferroelectric Capacitors by Interface Engineering Through Crystalline TaN

A stack formed by consecutive deposition of 2 nm TaN/10 nm HfZrOx (HZO)/2 nm TaN in an ALD tool was proposed to be sandwiched between thick PVD TiN as the promising structure for ferroelectric capacitors (FeCAPs). Compared to the ALD TiN counterpart, ALD TaN exhibits a smaller coefficient of thermal...

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Veröffentlicht in:	IEEE transactions on electron devices 2024-05, Vol.71 (5), p.3433-3438
Hauptverfasser:	Chen, Yi-Fan, Wang, Chen-Hsin, Shih, Hung-Yuan, Kuo, Chun-Yi, Wu, Yung-Hsien
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic layer epitaxy Capacitors Coefficient of thermal expansion (CTE) Electric fields Electrodes ferroelectric capacitors (FeCAPs) Ferroelectric materials Ferroelectricity in situ ALD Iron Lattices Physical vapor deposition Polarization recovery Reliability Switches TaN Thermal expansion time-dependent dielectric breakdown (TDDB) Tin
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