Analyzing the Changes in the Third Quadrant Characteristics of SiC MOSFET Induced by Threshold Drift
The third quadrant (3rd-quad) of SiC MOSFETs is typically used for deadtime freewheeling, which improves the power density. Because the channel in the 3rd-quad may not be completely closed, the 3rd-quad characteristics are more or less influenced by threshold voltage drift. However, a comprehensive...
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| Veröffentlicht in: | IEEE transactions on electron devices 2024-04, Vol.71 (4), p.1-7 |
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| creator | Tang, Lei Jiang, Huaping Liao, Ruijin Zhong, Xiaohan Zhao, Ke Xiao, Nianlei Huang, Yihan |
| description | The third quadrant (3rd-quad) of SiC MOSFETs is typically used for deadtime freewheeling, which improves the power density. Because the channel in the 3rd-quad may not be completely closed, the 3rd-quad characteristics are more or less influenced by threshold voltage drift. However, a comprehensive evaluation of the impact of threshold drift on the 3rd-quad characteristics remains to be completed. In this article, the effects of threshold drift on 3rd-quad characteristics are revealed, and the mechanisms behind the effects are discussed. The sensitivity of static and dynamic 3rd-quad characteristics to threshold voltage are studied under different off-state gate voltage, temperature, and p-base region resistance. Moreover, the explanation for the difference in sensitivity between devices is analyzed. The research provides guidance for both the application and chip design of SiC MOSFETs. |
| doi_str_mv | 10.1109/TED.2024.3362773 |
| format | Article |
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The research provides guidance for both the application and chip design of SiC MOSFETs.</description><subject>Drift</subject><subject>Immune system</subject><subject>Logic gates</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Quadrants</subject><subject>Sensitivity</subject><subject>Sensitivity analysis</subject><subject>Silicon carbide</subject><subject>Stress</subject><subject>third quadrant (3rd-quad) characteristics</subject><subject>Threshold voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkD1PwzAQhi0EEqWwMzBYYk7xV2xnrFI-KhVVqGW2HNtpXJWk2MlQfj0u7cB0Ot37nO4eAO4xmmCMiqf182xCEGETSjkRgl6AEc5zkRWc8UswQgjLrKCSXoObGLep5YyREbDTVu8OP77dwL5xsGx0u3ER-vavXTc-WPgxaBt02x-nQZveBR97byLsarjyJXxfrl6e13De2sE4C6tD4oKLTbezcBZ83d-Cq1rvors71zH4TED5li2Wr_NyusgMYXmf6ZrnglMqRVUbJgXRNRGy4JVB1lnncpwjW-XUYGFoLSrEiTTIoAoxTa3M6Rg8nvbuQ_c9uNirbTeE9GBUpCiYKGQhRUqhU8qELsbgarUP_kuHg8JIHV2q5FIdXaqzy4Q8nBDvnPsXZ5SjdPAvX7VvKg</recordid><startdate>20240401</startdate><enddate>20240401</enddate><creator>Tang, Lei</creator><creator>Jiang, Huaping</creator><creator>Liao, Ruijin</creator><creator>Zhong, Xiaohan</creator><creator>Zhao, Ke</creator><creator>Xiao, Nianlei</creator><creator>Huang, Yihan</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Because the channel in the 3rd-quad may not be completely closed, the 3rd-quad characteristics are more or less influenced by threshold voltage drift. However, a comprehensive evaluation of the impact of threshold drift on the 3rd-quad characteristics remains to be completed. In this article, the effects of threshold drift on 3rd-quad characteristics are revealed, and the mechanisms behind the effects are discussed. The sensitivity of static and dynamic 3rd-quad characteristics to threshold voltage are studied under different off-state gate voltage, temperature, and p-base region resistance. Moreover, the explanation for the difference in sensitivity between devices is analyzed. 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| subjects | Drift Immune system Logic gates MOSFET MOSFETs Quadrants Sensitivity Sensitivity analysis Silicon carbide Stress third quadrant (3rd-quad) characteristics Threshold voltage |
| title | Analyzing the Changes in the Third Quadrant Characteristics of SiC MOSFET Induced by Threshold Drift |
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