Transient Self-Heating Effects on Mixed-Mode Hot Carrier and Bias Temperature Instability in FinFETs: Experiments and Modeling
The self-heating effect (SHE) is a critical issue in nanoscale fin field effect transistors (FinFETs) that has emerged as an essential concern for device reliability. In physical circuit operations, devices generally suffer from mixed-mode hot carrier degradation (HCD) and bias temperature instabili...
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| Veröffentlicht in: | IEEE transactions on electron devices 2023-11, Vol.70 (11), p.5528-5534 |
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| container_title | IEEE transactions on electron devices |
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| creator | Sun, Zixuan Luo, Wenpu Jiao, Yanxin Zhang, Zuodong Song, Jiahao Zhang, Lining Wang, Zirui Zhang, Jiayang Wang, Runsheng Huang, Ru |
| description | The self-heating effect (SHE) is a critical issue in nanoscale fin field effect transistors (FinFETs) that has emerged as an essential concern for device reliability. In physical circuit operations, devices generally suffer from mixed-mode hot carrier degradation (HCD) and bias temperature instability (BTI) stress conditions. The transient SHE at the HCD stage affects the BTI, resulting in an inadequacy of existing aging models. In this article, we develop an accurate transient self-heating model and incorporate it into a mixed-mode HCD-BTI reliability aging prediction framework. The transient SHE on the reliability of nanoscale p-type FinFETs are revealed thoroughly with experimental characterizations and accurate modeling. Circuit aging simulations with the developed transient SHE-aware aging prediction framework are presented. These results enable a more accurate reliability evaluation in state-of-the-art circuit designs. |
| doi_str_mv | 10.1109/TED.2023.3312053 |
| format | Article |
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In physical circuit operations, devices generally suffer from mixed-mode hot carrier degradation (HCD) and bias temperature instability (BTI) stress conditions. The transient SHE at the HCD stage affects the BTI, resulting in an inadequacy of existing aging models. In this article, we develop an accurate transient self-heating model and incorporate it into a mixed-mode HCD-BTI reliability aging prediction framework. The transient SHE on the reliability of nanoscale p-type FinFETs are revealed thoroughly with experimental characterizations and accurate modeling. Circuit aging simulations with the developed transient SHE-aware aging prediction framework are presented. These results enable a more accurate reliability evaluation in state-of-the-art circuit designs.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2023.3312053</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aging ; Bias ; Bias temperature instability (BTI) ; Circuit design ; Circuit reliability ; Degradation ; Field effect transistors ; fin field effect transistor (FinFET) ; Heating ; Heating systems ; High temperature effects ; hot carrier degradation (HCD) ; Integrated circuit modeling ; Modelling ; Reliability analysis ; Semiconductor devices ; State-of-the-art reviews ; Stress ; Temperature measurement ; Transient analysis ; transient self-heating effect (SHE)</subject><ispartof>IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5528-5534</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-9e549da798f9e7d1c8d2efc69b04909ddc8a3e2172daff25037393f2283f4f183</citedby><cites>FETCH-LOGICAL-c292t-9e549da798f9e7d1c8d2efc69b04909ddc8a3e2172daff25037393f2283f4f183</cites><orcidid>0000-0002-7514-0767 ; 0000-0003-1472-7852 ; 0000-0002-8257-5531 ; 0000-0002-9705-9783 ; 0000-0002-1276-3748 ; 0000-0002-8496-6114</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10252142$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10252142$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Sun, Zixuan</creatorcontrib><creatorcontrib>Luo, Wenpu</creatorcontrib><creatorcontrib>Jiao, Yanxin</creatorcontrib><creatorcontrib>Zhang, Zuodong</creatorcontrib><creatorcontrib>Song, Jiahao</creatorcontrib><creatorcontrib>Zhang, Lining</creatorcontrib><creatorcontrib>Wang, Zirui</creatorcontrib><creatorcontrib>Zhang, Jiayang</creatorcontrib><creatorcontrib>Wang, Runsheng</creatorcontrib><creatorcontrib>Huang, Ru</creatorcontrib><title>Transient Self-Heating Effects on Mixed-Mode Hot Carrier and Bias Temperature Instability in FinFETs: Experiments and Modeling</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The self-heating effect (SHE) is a critical issue in nanoscale fin field effect transistors (FinFETs) that has emerged as an essential concern for device reliability. In physical circuit operations, devices generally suffer from mixed-mode hot carrier degradation (HCD) and bias temperature instability (BTI) stress conditions. The transient SHE at the HCD stage affects the BTI, resulting in an inadequacy of existing aging models. In this article, we develop an accurate transient self-heating model and incorporate it into a mixed-mode HCD-BTI reliability aging prediction framework. The transient SHE on the reliability of nanoscale p-type FinFETs are revealed thoroughly with experimental characterizations and accurate modeling. Circuit aging simulations with the developed transient SHE-aware aging prediction framework are presented. These results enable a more accurate reliability evaluation in state-of-the-art circuit designs.</description><subject>Aging</subject><subject>Bias</subject><subject>Bias temperature instability (BTI)</subject><subject>Circuit design</subject><subject>Circuit reliability</subject><subject>Degradation</subject><subject>Field effect transistors</subject><subject>fin field effect transistor (FinFET)</subject><subject>Heating</subject><subject>Heating systems</subject><subject>High temperature effects</subject><subject>hot carrier degradation (HCD)</subject><subject>Integrated circuit modeling</subject><subject>Modelling</subject><subject>Reliability analysis</subject><subject>Semiconductor devices</subject><subject>State-of-the-art reviews</subject><subject>Stress</subject><subject>Temperature measurement</subject><subject>Transient analysis</subject><subject>transient self-heating effect (SHE)</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkEtPAjEURhujifjYu3DRxPVgH_No3SkOQgJx4bielOmtKYEOtiWBjb_dIixc3dzknPvdfAjdUTKklMjHpn4dMsL4kHPKSMHP0IAWRZXJMi_P0YAQKjLJBb9EVyEs01rmORugn8YrFyy4iD9gZbIJqGjdF66NgS4G3Ds8tzvQ2bzXgCd9xCPlvQWPldP4xaqAG1hvwKu49YCnLkS1sCsb99g6PLZuXDfhCde7hNh1igl_4uHaKuXcoAujVgFuT_MafSZhNMlm72_T0fMs65hkMZNQ5FKrSgojodK0E5qB6Uq5ILkkUutOKA6MVkwrY1hBeMUlN4wJbnJDBb9GD8e7G99_byHEdtlvvUuRLROCFoSQiiSKHKnO9yF4MO0mPa38vqWkPbTcppbbQ8vtqeWk3B8VCwD_cFYwmjP-C2EWeMc</recordid><startdate>20231101</startdate><enddate>20231101</enddate><creator>Sun, Zixuan</creator><creator>Luo, Wenpu</creator><creator>Jiao, Yanxin</creator><creator>Zhang, Zuodong</creator><creator>Song, Jiahao</creator><creator>Zhang, Lining</creator><creator>Wang, Zirui</creator><creator>Zhang, Jiayang</creator><creator>Wang, Runsheng</creator><creator>Huang, Ru</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-7514-0767</orcidid><orcidid>https://orcid.org/0000-0003-1472-7852</orcidid><orcidid>https://orcid.org/0000-0002-8257-5531</orcidid><orcidid>https://orcid.org/0000-0002-9705-9783</orcidid><orcidid>https://orcid.org/0000-0002-1276-3748</orcidid><orcidid>https://orcid.org/0000-0002-8496-6114</orcidid></search><sort><creationdate>20231101</creationdate><title>Transient Self-Heating Effects on Mixed-Mode Hot Carrier and Bias Temperature Instability in FinFETs: Experiments and Modeling</title><author>Sun, Zixuan ; Luo, Wenpu ; Jiao, Yanxin ; Zhang, Zuodong ; Song, Jiahao ; Zhang, Lining ; Wang, Zirui ; Zhang, Jiayang ; Wang, Runsheng ; Huang, Ru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c292t-9e549da798f9e7d1c8d2efc69b04909ddc8a3e2172daff25037393f2283f4f183</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Aging</topic><topic>Bias</topic><topic>Bias temperature instability (BTI)</topic><topic>Circuit design</topic><topic>Circuit reliability</topic><topic>Degradation</topic><topic>Field effect transistors</topic><topic>fin field effect transistor (FinFET)</topic><topic>Heating</topic><topic>Heating systems</topic><topic>High temperature effects</topic><topic>hot carrier degradation (HCD)</topic><topic>Integrated circuit modeling</topic><topic>Modelling</topic><topic>Reliability analysis</topic><topic>Semiconductor devices</topic><topic>State-of-the-art reviews</topic><topic>Stress</topic><topic>Temperature measurement</topic><topic>Transient analysis</topic><topic>transient self-heating effect (SHE)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sun, Zixuan</creatorcontrib><creatorcontrib>Luo, Wenpu</creatorcontrib><creatorcontrib>Jiao, Yanxin</creatorcontrib><creatorcontrib>Zhang, Zuodong</creatorcontrib><creatorcontrib>Song, Jiahao</creatorcontrib><creatorcontrib>Zhang, Lining</creatorcontrib><creatorcontrib>Wang, Zirui</creatorcontrib><creatorcontrib>Zhang, Jiayang</creatorcontrib><creatorcontrib>Wang, Runsheng</creatorcontrib><creatorcontrib>Huang, Ru</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sun, Zixuan</au><au>Luo, Wenpu</au><au>Jiao, Yanxin</au><au>Zhang, Zuodong</au><au>Song, Jiahao</au><au>Zhang, Lining</au><au>Wang, Zirui</au><au>Zhang, Jiayang</au><au>Wang, Runsheng</au><au>Huang, Ru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transient Self-Heating Effects on Mixed-Mode Hot Carrier and Bias Temperature Instability in FinFETs: Experiments and Modeling</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2023-11-01</date><risdate>2023</risdate><volume>70</volume><issue>11</issue><spage>5528</spage><epage>5534</epage><pages>5528-5534</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The self-heating effect (SHE) is a critical issue in nanoscale fin field effect transistors (FinFETs) that has emerged as an essential concern for device reliability. In physical circuit operations, devices generally suffer from mixed-mode hot carrier degradation (HCD) and bias temperature instability (BTI) stress conditions. The transient SHE at the HCD stage affects the BTI, resulting in an inadequacy of existing aging models. In this article, we develop an accurate transient self-heating model and incorporate it into a mixed-mode HCD-BTI reliability aging prediction framework. The transient SHE on the reliability of nanoscale p-type FinFETs are revealed thoroughly with experimental characterizations and accurate modeling. Circuit aging simulations with the developed transient SHE-aware aging prediction framework are presented. 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| source | IEEE Electronic Library (IEL) |
| subjects | Aging Bias Bias temperature instability (BTI) Circuit design Circuit reliability Degradation Field effect transistors fin field effect transistor (FinFET) Heating Heating systems High temperature effects hot carrier degradation (HCD) Integrated circuit modeling Modelling Reliability analysis Semiconductor devices State-of-the-art reviews Stress Temperature measurement Transient analysis transient self-heating effect (SHE) |
| title | Transient Self-Heating Effects on Mixed-Mode Hot Carrier and Bias Temperature Instability in FinFETs: Experiments and Modeling |
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