Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor

The industry-standard amorphous metal-oxide-semiconductor (AOS) thin-film transistor (TFT) technology is demonstrated for making low-voltage high intrinsic gain devices. It is revealed by the technology computer-aided design (TCAD) simulation that, without need of making Schottky barrier contacts, l...

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Veröffentlicht in:	IEEE transactions on electron devices 2023-06, Vol.70 (6), p.1-5
Hauptverfasser:	Deng, Li'ang, Han, Lei, Ouyang, Bang, Yin, Xiaokuan, Guo, Xiaojun
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous metal–oxide–semiconductor (AOS) Amplification CAD Computer aided design Electrodes high intrinsic gain indium–gallium–zinc oxide (IGZO) industry-standard processes Logic gates Low voltage Manufacturing Metal oxide semiconductors ohmic contact Resistance Semiconductor device measurement Semiconductor devices Signal detection Thin film transistors thin-film transistor (TFT) Voltage gain
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