Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing

In this article, a precise electro-thermal modeling framework of resistive random access memory (RRAM) fabricated using a commercial 40 nm CMOS back end of line (BEOL) process is established to perform thermal analysis of RRAM-based in-memory computing (IMC). The weight matrix is mapped into the mod...

Ausführliche Beschreibung