Impact of Variant Gate Insulator Fabrication Process on Reliability of Dual-Gate InGaZnO Thin-Film Transistors

The effect of hydrogen diffusion in the bilayer bottom gate insulator (BGI) in dual-gate InGaZnO (IGZO) thin-film transistors (TFT) is investigated. It is discovered that hydrogen diffuses from the first deposited GI, migrates toward the second one, and forms a weak chemical bond with a dangling bon...

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Veröffentlicht in:	IEEE transactions on electron devices 2023-03, Vol.70 (3), p.1-6
Hauptverfasser:	Chien, Ya-Ting, Zhou, Kuan-Ju, Tai, Mao-Chou, Chen, Yu-An, Sun, Pei-Jun, Lee, Ya-Huan, Chang, Ting-Chang, Tsai, Tsung-Ming, Fan, Yang-Shun, Huang, Chen-Shuo, Chen, Kuo-Kuang, Tsai, Chih-Hung
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Bilayer gate insulator (GI) Bonding strength Chemical bonds Chemicals Defects Degradation Diffusion effects Electrons Fabrication Hydrogen hydrogen diffusion Indium gallium zinc oxide indium–gallium–zinc oxide (IGZO) instability mechanism Logic gates Semiconductor devices Stress Thin film transistors Threshold voltage Transistors Trapping
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