Abnormal Degradation Behaviors Under Negative Bias Stress in Flexible p-Channel Low-Temperature Polycrystalline Silicon Thin-Film Transistors After Laser Lift-Off Process
This work investigates the abnormal phenomena that are observed in electrical characteristics under negative bias stress (NBS) in flexible p-channel low-temperature polycrystalline silicon thin-film transistors (p-channel LTPS TFTs) after TFTs being lifted off from a rigid substrate. During the lift...
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Veröffentlicht in: | IEEE transactions on electron devices 2023-03, Vol.70 (3), p.1079-1084 |
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