Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

In this article, enhancement-mode thin-film transistors (TFTs) with atomic layer deposition (ALD)-derived ultrathin ( \approx 3 nm) amorphous indium-zinc oxide (a-IZO) channel were demonstrated. Our devices showed improved device characteristics as benchmarked with thicker IZO thin-film channels. Th...

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Veröffentlicht in:	IEEE transactions on electron devices 2023-03, Vol.70 (3), p.1-6
Hauptverfasser:	Liang, Yan-Kui, Lin, Jing-Wei, Peng, Li-Chi, Hua, Yi Miao, Chou, Tsung-Te, Kei, Chi-Chung, Lu, Chun-Chieh, Huang, Huai-Ying, Yeong, Sai Hooi, Lin, Yu-Ming, Liu, Po-Tsun, Chang, Edward-Yi, Lin, Chun-Hsiung
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Atomic layer deposition (ALD) Atomic layer epitaxy Bias Contact resistance Electric contacts high mobility II-VI semiconductor materials indium–zinc oxide (IZO) InZnO thin-film transistors (TFTs) Iron Logic gates oxygen annealing Photoelectrons reliability Semiconductor devices TFTs Thin film transistors Threshold voltage Ultraviolet spectra Uninterruptible power systems Zinc oxide
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