Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition
In this article, enhancement-mode thin-film transistors (TFTs) with atomic layer deposition (ALD)-derived ultrathin ( \approx 3 nm) amorphous indium-zinc oxide (a-IZO) channel were demonstrated. Our devices showed improved device characteristics as benchmarked with thicker IZO thin-film channels. Th...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 2023-03, Vol.70 (3), p.1-6 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 6 |
|---|---|
| container_issue | 3 |
| container_start_page | 1 |
| container_title | IEEE transactions on electron devices |
| container_volume | 70 |
| creator | Liang, Yan-Kui Lin, Jing-Wei Peng, Li-Chi Hua, Yi Miao Chou, Tsung-Te Kei, Chi-Chung Lu, Chun-Chieh Huang, Huai-Ying Yeong, Sai Hooi Lin, Yu-Ming Liu, Po-Tsun Chang, Edward-Yi Lin, Chun-Hsiung |
| description | In this article, enhancement-mode thin-film transistors (TFTs) with atomic layer deposition (ALD)-derived ultrathin ( \approx 3 nm) amorphous indium-zinc oxide (a-IZO) channel were demonstrated. Our devices showed improved device characteristics as benchmarked with thicker IZO thin-film channels. The ALD-deposited IZO channel TFT with an In/Zn ratio of \approx 6:4 exhibited a high field-effect channel mobility ( \mu_{\text{FE}}\text{)} of 53.6 cm ^{\text{2}} /V-s, a threshold voltage ( \textit{V}_{\text{th}}\text{)} of 0.28 V, a low subthreshold gate swing of 74 mV/decade, an I_{\biosc{on}}/I_{\biosc{off}} ratio of > 10 ^{\text{9}} , and a contact resistance of 0.18 k \Omega - \mu m after 300 {^{\circ}} C anneal in oxygen atmosphere. Physical analysis, including X-ray and ultraviolet (UV) photoelectron spectra of IZO films, was conducted to understand the mechanisms of enhancement in electrical performance after annealing. The threshold voltages of the TFT also exhibited high stability ( \Delta\textit{V}_{\text{th, PBS}} |
| doi_str_mv | 10.1109/TED.2022.3232476 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TED_2022_3232476</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>10004843</ieee_id><sourcerecordid>2779658415</sourcerecordid><originalsourceid>FETCH-LOGICAL-c292t-9113beb1359e956ebd9ef0ecc89b712316b901cfc8784eac60cbc76ace61bf9c3</originalsourceid><addsrcrecordid>eNpNkD1PwzAQhi0EEqWwMzBYYk7xV5x4rPoBlSqVIV1YLMe9UFdpHGwz9N-Tqh2Y7j3pee-kB6FnSiaUEvVWLeYTRhibcMaZKOQNGtE8LzIlhbxFI0JomSle8nv0EONhWKUQbIS-Fy3YFJw1LZ7tTTA2QXAxORuxb_C2TcGkvevwqvvqNrgaYrZ07RFXwXRxAH2I-DNAbwLscH3C0-SPzuK1OUHAc-h9dMn57hHdNaaN8HSdY7RdLqrZR7bevK9m03VmmWIpU5TyGmrKcwUql1DvFDQErC1VXVDGqawVobaxZVEKMFYSW9tCGguS1o2yfIxeL3f74H9-ISZ98L-hG15qVhRK5qWg-UCRC2WDjzFAo_vgjiacNCX6rFMPOvVZp77qHCovl4oDgH84IaIUnP8B1nFycg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2779658415</pqid></control><display><type>article</type><title>Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition</title><source>IEEE Electronic Library (IEL)</source><creator>Liang, Yan-Kui ; Lin, Jing-Wei ; Peng, Li-Chi ; Hua, Yi Miao ; Chou, Tsung-Te ; Kei, Chi-Chung ; Lu, Chun-Chieh ; Huang, Huai-Ying ; Yeong, Sai Hooi ; Lin, Yu-Ming ; Liu, Po-Tsun ; Chang, Edward-Yi ; Lin, Chun-Hsiung</creator><creatorcontrib>Liang, Yan-Kui ; Lin, Jing-Wei ; Peng, Li-Chi ; Hua, Yi Miao ; Chou, Tsung-Te ; Kei, Chi-Chung ; Lu, Chun-Chieh ; Huang, Huai-Ying ; Yeong, Sai Hooi ; Lin, Yu-Ming ; Liu, Po-Tsun ; Chang, Edward-Yi ; Lin, Chun-Hsiung</creatorcontrib><description><![CDATA[In this article, enhancement-mode thin-film transistors (TFTs) with atomic layer deposition (ALD)-derived ultrathin (<inline-formula> <tex-math notation="LaTeX">\approx</tex-math> </inline-formula>3 nm) amorphous indium-zinc oxide (a-IZO) channel were demonstrated. Our devices showed improved device characteristics as benchmarked with thicker IZO thin-film channels. The ALD-deposited IZO channel TFT with an In/Zn ratio of <inline-formula> <tex-math notation="LaTeX">\approx</tex-math> </inline-formula>6:4 exhibited a high field-effect channel mobility (<inline-formula> <tex-math notation="LaTeX">\mu_{\text{FE}}\text{)}</tex-math> </inline-formula> of 53.6 cm<inline-formula> <tex-math notation="LaTeX">^{\text{2}}</tex-math> </inline-formula>/V-s, a threshold voltage (<inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{th}}\text{)}</tex-math> </inline-formula> of 0.28 V, a low subthreshold gate swing of 74 mV/decade, an <inline-formula> <tex-math notation="LaTeX">I_{\biosc{on}}/I_{\biosc{off}}</tex-math> </inline-formula> ratio of <inline-formula> <tex-math notation="LaTeX">></tex-math> </inline-formula>10<inline-formula> <tex-math notation="LaTeX">^{\text{9}}</tex-math> </inline-formula>, and a contact resistance of 0.18 k<inline-formula> <tex-math notation="LaTeX">\Omega </tex-math> </inline-formula>-<inline-formula> <tex-math notation="LaTeX">\mu </tex-math> </inline-formula>m after 300 <inline-formula> <tex-math notation="LaTeX">{^{\circ}}</tex-math> </inline-formula>C anneal in oxygen atmosphere. Physical analysis, including X-ray and ultraviolet (UV) photoelectron spectra of IZO films, was conducted to understand the mechanisms of enhancement in electrical performance after annealing. The threshold voltages of the TFT also exhibited high stability (<inline-formula> <tex-math notation="LaTeX">\Delta\textit{V}_{\text{th, PBS}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX"><</tex-math> </inline-formula> 16 mV and <inline-formula> <tex-math notation="LaTeX">\Delta\textit{V}_{\text{th, NBS}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX"><</tex-math> </inline-formula> 12 mV) after positive bias stress (PBS) and negative bias stress (NBS) test for 3600 s. To the best of our knowledge, we reported the TFT with thinnest IZO ternary oxide semiconductor (OS) channel exhibiting superior channel mobility and subthreshold characteristics.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2022.3232476</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Annealing ; Atomic layer deposition (ALD) ; Atomic layer epitaxy ; Bias ; Contact resistance ; Electric contacts ; high mobility ; II-VI semiconductor materials ; indium–zinc oxide (IZO) ; InZnO thin-film transistors (TFTs) ; Iron ; Logic gates ; oxygen annealing ; Photoelectrons ; reliability ; Semiconductor devices ; TFTs ; Thin film transistors ; Threshold voltage ; Ultraviolet spectra ; Uninterruptible power systems ; Zinc oxide</subject><ispartof>IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1-6</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-9113beb1359e956ebd9ef0ecc89b712316b901cfc8784eac60cbc76ace61bf9c3</citedby><cites>FETCH-LOGICAL-c292t-9113beb1359e956ebd9ef0ecc89b712316b901cfc8784eac60cbc76ace61bf9c3</cites><orcidid>0000-0003-1616-5240 ; 0000-0003-1664-0312 ; 0000-0001-8560-3668 ; 0000-0003-2694-5427</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10004843$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10004843$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Liang, Yan-Kui</creatorcontrib><creatorcontrib>Lin, Jing-Wei</creatorcontrib><creatorcontrib>Peng, Li-Chi</creatorcontrib><creatorcontrib>Hua, Yi Miao</creatorcontrib><creatorcontrib>Chou, Tsung-Te</creatorcontrib><creatorcontrib>Kei, Chi-Chung</creatorcontrib><creatorcontrib>Lu, Chun-Chieh</creatorcontrib><creatorcontrib>Huang, Huai-Ying</creatorcontrib><creatorcontrib>Yeong, Sai Hooi</creatorcontrib><creatorcontrib>Lin, Yu-Ming</creatorcontrib><creatorcontrib>Liu, Po-Tsun</creatorcontrib><creatorcontrib>Chang, Edward-Yi</creatorcontrib><creatorcontrib>Lin, Chun-Hsiung</creatorcontrib><title>Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[In this article, enhancement-mode thin-film transistors (TFTs) with atomic layer deposition (ALD)-derived ultrathin (<inline-formula> <tex-math notation="LaTeX">\approx</tex-math> </inline-formula>3 nm) amorphous indium-zinc oxide (a-IZO) channel were demonstrated. Our devices showed improved device characteristics as benchmarked with thicker IZO thin-film channels. The ALD-deposited IZO channel TFT with an In/Zn ratio of <inline-formula> <tex-math notation="LaTeX">\approx</tex-math> </inline-formula>6:4 exhibited a high field-effect channel mobility (<inline-formula> <tex-math notation="LaTeX">\mu_{\text{FE}}\text{)}</tex-math> </inline-formula> of 53.6 cm<inline-formula> <tex-math notation="LaTeX">^{\text{2}}</tex-math> </inline-formula>/V-s, a threshold voltage (<inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{th}}\text{)}</tex-math> </inline-formula> of 0.28 V, a low subthreshold gate swing of 74 mV/decade, an <inline-formula> <tex-math notation="LaTeX">I_{\biosc{on}}/I_{\biosc{off}}</tex-math> </inline-formula> ratio of <inline-formula> <tex-math notation="LaTeX">></tex-math> </inline-formula>10<inline-formula> <tex-math notation="LaTeX">^{\text{9}}</tex-math> </inline-formula>, and a contact resistance of 0.18 k<inline-formula> <tex-math notation="LaTeX">\Omega </tex-math> </inline-formula>-<inline-formula> <tex-math notation="LaTeX">\mu </tex-math> </inline-formula>m after 300 <inline-formula> <tex-math notation="LaTeX">{^{\circ}}</tex-math> </inline-formula>C anneal in oxygen atmosphere. Physical analysis, including X-ray and ultraviolet (UV) photoelectron spectra of IZO films, was conducted to understand the mechanisms of enhancement in electrical performance after annealing. The threshold voltages of the TFT also exhibited high stability (<inline-formula> <tex-math notation="LaTeX">\Delta\textit{V}_{\text{th, PBS}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX"><</tex-math> </inline-formula> 16 mV and <inline-formula> <tex-math notation="LaTeX">\Delta\textit{V}_{\text{th, NBS}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX"><</tex-math> </inline-formula> 12 mV) after positive bias stress (PBS) and negative bias stress (NBS) test for 3600 s. To the best of our knowledge, we reported the TFT with thinnest IZO ternary oxide semiconductor (OS) channel exhibiting superior channel mobility and subthreshold characteristics.]]></description><subject>Annealing</subject><subject>Atomic layer deposition (ALD)</subject><subject>Atomic layer epitaxy</subject><subject>Bias</subject><subject>Contact resistance</subject><subject>Electric contacts</subject><subject>high mobility</subject><subject>II-VI semiconductor materials</subject><subject>indium–zinc oxide (IZO)</subject><subject>InZnO thin-film transistors (TFTs)</subject><subject>Iron</subject><subject>Logic gates</subject><subject>oxygen annealing</subject><subject>Photoelectrons</subject><subject>reliability</subject><subject>Semiconductor devices</subject><subject>TFTs</subject><subject>Thin film transistors</subject><subject>Threshold voltage</subject><subject>Ultraviolet spectra</subject><subject>Uninterruptible power systems</subject><subject>Zinc oxide</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkD1PwzAQhi0EEqWwMzBYYk7xV5x4rPoBlSqVIV1YLMe9UFdpHGwz9N-Tqh2Y7j3pee-kB6FnSiaUEvVWLeYTRhibcMaZKOQNGtE8LzIlhbxFI0JomSle8nv0EONhWKUQbIS-Fy3YFJw1LZ7tTTA2QXAxORuxb_C2TcGkvevwqvvqNrgaYrZ07RFXwXRxAH2I-DNAbwLscH3C0-SPzuK1OUHAc-h9dMn57hHdNaaN8HSdY7RdLqrZR7bevK9m03VmmWIpU5TyGmrKcwUql1DvFDQErC1VXVDGqawVobaxZVEKMFYSW9tCGguS1o2yfIxeL3f74H9-ISZ98L-hG15qVhRK5qWg-UCRC2WDjzFAo_vgjiacNCX6rFMPOvVZp77qHCovl4oDgH84IaIUnP8B1nFycg</recordid><startdate>20230301</startdate><enddate>20230301</enddate><creator>Liang, Yan-Kui</creator><creator>Lin, Jing-Wei</creator><creator>Peng, Li-Chi</creator><creator>Hua, Yi Miao</creator><creator>Chou, Tsung-Te</creator><creator>Kei, Chi-Chung</creator><creator>Lu, Chun-Chieh</creator><creator>Huang, Huai-Ying</creator><creator>Yeong, Sai Hooi</creator><creator>Lin, Yu-Ming</creator><creator>Liu, Po-Tsun</creator><creator>Chang, Edward-Yi</creator><creator>Lin, Chun-Hsiung</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-1616-5240</orcidid><orcidid>https://orcid.org/0000-0003-1664-0312</orcidid><orcidid>https://orcid.org/0000-0001-8560-3668</orcidid><orcidid>https://orcid.org/0000-0003-2694-5427</orcidid></search><sort><creationdate>20230301</creationdate><title>Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition</title><author>Liang, Yan-Kui ; Lin, Jing-Wei ; Peng, Li-Chi ; Hua, Yi Miao ; Chou, Tsung-Te ; Kei, Chi-Chung ; Lu, Chun-Chieh ; Huang, Huai-Ying ; Yeong, Sai Hooi ; Lin, Yu-Ming ; Liu, Po-Tsun ; Chang, Edward-Yi ; Lin, Chun-Hsiung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c292t-9113beb1359e956ebd9ef0ecc89b712316b901cfc8784eac60cbc76ace61bf9c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Annealing</topic><topic>Atomic layer deposition (ALD)</topic><topic>Atomic layer epitaxy</topic><topic>Bias</topic><topic>Contact resistance</topic><topic>Electric contacts</topic><topic>high mobility</topic><topic>II-VI semiconductor materials</topic><topic>indium–zinc oxide (IZO)</topic><topic>InZnO thin-film transistors (TFTs)</topic><topic>Iron</topic><topic>Logic gates</topic><topic>oxygen annealing</topic><topic>Photoelectrons</topic><topic>reliability</topic><topic>Semiconductor devices</topic><topic>TFTs</topic><topic>Thin film transistors</topic><topic>Threshold voltage</topic><topic>Ultraviolet spectra</topic><topic>Uninterruptible power systems</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liang, Yan-Kui</creatorcontrib><creatorcontrib>Lin, Jing-Wei</creatorcontrib><creatorcontrib>Peng, Li-Chi</creatorcontrib><creatorcontrib>Hua, Yi Miao</creatorcontrib><creatorcontrib>Chou, Tsung-Te</creatorcontrib><creatorcontrib>Kei, Chi-Chung</creatorcontrib><creatorcontrib>Lu, Chun-Chieh</creatorcontrib><creatorcontrib>Huang, Huai-Ying</creatorcontrib><creatorcontrib>Yeong, Sai Hooi</creatorcontrib><creatorcontrib>Lin, Yu-Ming</creatorcontrib><creatorcontrib>Liu, Po-Tsun</creatorcontrib><creatorcontrib>Chang, Edward-Yi</creatorcontrib><creatorcontrib>Lin, Chun-Hsiung</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Liang, Yan-Kui</au><au>Lin, Jing-Wei</au><au>Peng, Li-Chi</au><au>Hua, Yi Miao</au><au>Chou, Tsung-Te</au><au>Kei, Chi-Chung</au><au>Lu, Chun-Chieh</au><au>Huang, Huai-Ying</au><au>Yeong, Sai Hooi</au><au>Lin, Yu-Ming</au><au>Liu, Po-Tsun</au><au>Chang, Edward-Yi</au><au>Lin, Chun-Hsiung</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2023-03-01</date><risdate>2023</risdate><volume>70</volume><issue>3</issue><spage>1</spage><epage>6</epage><pages>1-6</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract><![CDATA[In this article, enhancement-mode thin-film transistors (TFTs) with atomic layer deposition (ALD)-derived ultrathin (<inline-formula> <tex-math notation="LaTeX">\approx</tex-math> </inline-formula>3 nm) amorphous indium-zinc oxide (a-IZO) channel were demonstrated. Our devices showed improved device characteristics as benchmarked with thicker IZO thin-film channels. The ALD-deposited IZO channel TFT with an In/Zn ratio of <inline-formula> <tex-math notation="LaTeX">\approx</tex-math> </inline-formula>6:4 exhibited a high field-effect channel mobility (<inline-formula> <tex-math notation="LaTeX">\mu_{\text{FE}}\text{)}</tex-math> </inline-formula> of 53.6 cm<inline-formula> <tex-math notation="LaTeX">^{\text{2}}</tex-math> </inline-formula>/V-s, a threshold voltage (<inline-formula> <tex-math notation="LaTeX">\textit{V}_{\text{th}}\text{)}</tex-math> </inline-formula> of 0.28 V, a low subthreshold gate swing of 74 mV/decade, an <inline-formula> <tex-math notation="LaTeX">I_{\biosc{on}}/I_{\biosc{off}}</tex-math> </inline-formula> ratio of <inline-formula> <tex-math notation="LaTeX">></tex-math> </inline-formula>10<inline-formula> <tex-math notation="LaTeX">^{\text{9}}</tex-math> </inline-formula>, and a contact resistance of 0.18 k<inline-formula> <tex-math notation="LaTeX">\Omega </tex-math> </inline-formula>-<inline-formula> <tex-math notation="LaTeX">\mu </tex-math> </inline-formula>m after 300 <inline-formula> <tex-math notation="LaTeX">{^{\circ}}</tex-math> </inline-formula>C anneal in oxygen atmosphere. Physical analysis, including X-ray and ultraviolet (UV) photoelectron spectra of IZO films, was conducted to understand the mechanisms of enhancement in electrical performance after annealing. The threshold voltages of the TFT also exhibited high stability (<inline-formula> <tex-math notation="LaTeX">\Delta\textit{V}_{\text{th, PBS}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX"><</tex-math> </inline-formula> 16 mV and <inline-formula> <tex-math notation="LaTeX">\Delta\textit{V}_{\text{th, NBS}}</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX"><</tex-math> </inline-formula> 12 mV) after positive bias stress (PBS) and negative bias stress (NBS) test for 3600 s. To the best of our knowledge, we reported the TFT with thinnest IZO ternary oxide semiconductor (OS) channel exhibiting superior channel mobility and subthreshold characteristics.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2022.3232476</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-1616-5240</orcidid><orcidid>https://orcid.org/0000-0003-1664-0312</orcidid><orcidid>https://orcid.org/0000-0001-8560-3668</orcidid><orcidid>https://orcid.org/0000-0003-2694-5427</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1-6 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_TED_2022_3232476 |
| source | IEEE Electronic Library (IEL) |
| subjects | Annealing Atomic layer deposition (ALD) Atomic layer epitaxy Bias Contact resistance Electric contacts high mobility II-VI semiconductor materials indium–zinc oxide (IZO) InZnO thin-film transistors (TFTs) Iron Logic gates oxygen annealing Photoelectrons reliability Semiconductor devices TFTs Thin film transistors Threshold voltage Ultraviolet spectra Uninterruptible power systems Zinc oxide |
| title | Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T23%3A50%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrical%20Characteristics%20of%20Ultrathin%20InZnO%20Thin-Film%20Transistors%20Prepared%20by%20Atomic%20Layer%20Deposition&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Liang,%20Yan-Kui&rft.date=2023-03-01&rft.volume=70&rft.issue=3&rft.spage=1&rft.epage=6&rft.pages=1-6&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2022.3232476&rft_dat=%3Cproquest_RIE%3E2779658415%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2779658415&rft_id=info:pmid/&rft_ieee_id=10004843&rfr_iscdi=true |