Fabrication and Modeling of Flexible High-Performance Resistive Switching Devices With Biomaterial Gelatin/Ultrathin HfOx Hybrid Bilayer

Flexible resistive random access memory (RRAM) devices with biomaterial gelatin and ultrathin HfOx hybrid bilayer dielectric exhibiting excellent resistive switching (RS) behavior are demonstrated. The fabricated devices show a very high memory window of greater than 10^{{5}} and data retention of...

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Veröffentlicht in:	IEEE transactions on electron devices 2022-11, Vol.69 (11), p.6423-6429
Hauptverfasser:	Dwivedi, Anurag, Lodhi, Anil, Saini, Shalu, Agarwal, Harshit, Tiwari, Shree Prakash
Format:	Artikel
Sprache:	eng
Schlagworte:	Behavioral sciences Bending machines Biomaterial gelatin Biomedical materials Degradation Dielectrics flexible electronics Gelatin Hafnium oxide hybrid bilayer dielectric Ions Mathematical models Memory devices Model accuracy parameter extraction Random access memory resistive switching (RS) Stability Switches Switching Voltage
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