Comparison of Commercial Planar and Trench SiC MOSFETs by Electrical Characterization of Performance-Degrading Near-Interface Traps

The suboptimal performance and low channel-carrier mobility of silicon carbide (SiC) power MOSFETs are attributed to a high density of oxide traps near the 4H-SiC/SiO _{\text{2}} interface. In this article, a commercial 1200-V SiC trench MOSFET has been compared with a planar MOSFET obtained from t...

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Veröffentlicht in:	IEEE transactions on electron devices 2022-11, Vol.69 (11), p.1-6, Article 6225
Hauptverfasser:	Chaturvedi, Mayank, Dimitrijev, Sima, Haasmann, Daniel, Moghadam, Hamid Amini, Pande, Peyush, Jadli, Utkarsh
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier mobility Commercial silicon carbide (SiC) MOSFET Electrical properties MOSFETs near-interface traps (NITs) Performance degradation planar Silicon carbide Silicon dioxide trench
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