High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate
A normally- OFF AlGaN/GaN high-electron-mobility transistor (HEMT) with p-GaN gate was fabricated on free-standing GaN substrate. The self-terminated etching technology was achieved by combining with AlN stop layer and SF 6 -based etching gas. Compared with HEMT on Si substrate (Si-HEMT), the HEMT o...
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| Veröffentlicht in: | IEEE transactions on electron devices 2022-09, Vol.69 (9), p.4859-4863 |
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| container_title | IEEE transactions on electron devices |
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| creator | Wang, Hsiang-Chun Pu, Taofei Li, Xiaobo Liu, Chia-Hao Wu, JunYe Yang, Jiaying Zhang, Ziyue Lu, Youming Wang, Qi Song, Lijun Chiu, Hsien-Chin Ao, Jin-Ping Liu, Xinke |
| description | A normally- OFF AlGaN/GaN high-electron-mobility transistor (HEMT) with p-GaN gate was fabricated on free-standing GaN substrate. The self-terminated etching technology was achieved by combining with AlN stop layer and SF 6 -based etching gas. Compared with HEMT on Si substrate (Si-HEMT), the HEMT on GaN substrate (GaN-HEMT) demonstrated the higher current density, lower subthreshold swing (SS), lower drain leakage current, and lower static and dynamic ON-resistance that were ascribed to the lower dislocation and less defect on free-standing GaN substrate. Meanwhile, the excellent {V}_{\mathrm{th}} stability up to 175 °C and uniformity was demonstrated. Also, higher breakdown voltage (BV) of 683 V was measured, which was higher than 507 V for Si-HEMT. Hence, a normally- OFF AlGaN/GaN HEMT on free-standing GaN substrate shows good potential in power application. |
| doi_str_mv | 10.1109/TED.2022.3193991 |
| format | Article |
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The self-terminated etching technology was achieved by combining with AlN stop layer and SF 6 -based etching gas. Compared with HEMT on Si substrate (Si-HEMT), the HEMT on GaN substrate (GaN-HEMT) demonstrated the higher current density, lower subthreshold swing (SS), lower drain leakage current, and lower static and dynamic ON-resistance that were ascribed to the lower dislocation and less defect on free-standing GaN substrate. Meanwhile, the excellent <inline-formula> <tex-math notation="LaTeX">{V}_{\mathrm{th}} </tex-math></inline-formula> stability up to 175 °C and uniformity was demonstrated. Also, higher breakdown voltage (BV) of 683 V was measured, which was higher than 507 V for Si-HEMT. Hence, a normally- OFF AlGaN/GaN HEMT on free-standing GaN substrate shows good potential in power application.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2022.3193991</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>AlGaN/GaN HEMT ; Aluminum gallium nitrides ; Epitaxial growth ; Etching ; free-standing GaN substrate ; Gallium nitride ; Gallium nitrides ; HEMTs ; High electron mobility transistors ; Leakage current ; Logic gates ; normally-OFF operation ; p-GaN gate ; self-terminated etching ; Semiconductor devices ; Silicon substrates ; Substrates ; Wide band gap semiconductors</subject><ispartof>IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4859-4863</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-da928d059adff6253634f363738aad8f4dd4d77ac7417040aafda64dda7ff533</citedby><cites>FETCH-LOGICAL-c338t-da928d059adff6253634f363738aad8f4dd4d77ac7417040aafda64dda7ff533</cites><orcidid>0000-0003-3861-8992 ; 0000-0003-1068-5798 ; 0000-0002-8964-7518 ; 0000-0002-3472-5945 ; 0000-0002-0549-3508 ; 0000-0001-8222-809X ; 0000-0003-1685-0168 ; 0000-0001-7129-1974</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9851839$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9851839$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wang, Hsiang-Chun</creatorcontrib><creatorcontrib>Pu, Taofei</creatorcontrib><creatorcontrib>Li, Xiaobo</creatorcontrib><creatorcontrib>Liu, Chia-Hao</creatorcontrib><creatorcontrib>Wu, JunYe</creatorcontrib><creatorcontrib>Yang, Jiaying</creatorcontrib><creatorcontrib>Zhang, Ziyue</creatorcontrib><creatorcontrib>Lu, Youming</creatorcontrib><creatorcontrib>Wang, Qi</creatorcontrib><creatorcontrib>Song, Lijun</creatorcontrib><creatorcontrib>Chiu, Hsien-Chin</creatorcontrib><creatorcontrib>Ao, Jin-Ping</creatorcontrib><creatorcontrib>Liu, Xinke</creatorcontrib><title>High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A normally- OFF AlGaN/GaN high-electron-mobility transistor (HEMT) with p-GaN gate was fabricated on free-standing GaN substrate. The self-terminated etching technology was achieved by combining with AlN stop layer and SF 6 -based etching gas. Compared with HEMT on Si substrate (Si-HEMT), the HEMT on GaN substrate (GaN-HEMT) demonstrated the higher current density, lower subthreshold swing (SS), lower drain leakage current, and lower static and dynamic ON-resistance that were ascribed to the lower dislocation and less defect on free-standing GaN substrate. Meanwhile, the excellent <inline-formula> <tex-math notation="LaTeX">{V}_{\mathrm{th}} </tex-math></inline-formula> stability up to 175 °C and uniformity was demonstrated. Also, higher breakdown voltage (BV) of 683 V was measured, which was higher than 507 V for Si-HEMT. Hence, a normally- OFF AlGaN/GaN HEMT on free-standing GaN substrate shows good potential in power application.</description><subject>AlGaN/GaN HEMT</subject><subject>Aluminum gallium nitrides</subject><subject>Epitaxial growth</subject><subject>Etching</subject><subject>free-standing GaN substrate</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>Leakage current</subject><subject>Logic gates</subject><subject>normally-OFF operation</subject><subject>p-GaN gate</subject><subject>self-terminated etching</subject><subject>Semiconductor devices</subject><subject>Silicon substrates</subject><subject>Substrates</subject><subject>Wide band gap semiconductors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9UF1LwzAUDaLgnL4LvhR8Tk2atEkeZe5DmJuw4mu4Nsns2NqadA_796Zs-HI_zj3nXDgIPVKSUkrUSzl9SzOSZSmjiilFr9CI5rnAquDFNRoRQiVWTLJbdBfCLq4F59kIfS3q7Q_-tN61_gBNZZPVMOz3J7x2Lll31kNft03S4Tmskjn0NllMP8okQjNvLd700Ji62SbDeXP8Dn0U2Ht042Af7MOlj1E5m5aTBV6u5--T1yWuGJM9NqAyaUiuwDhXZDkrGHexCCYBjHTcGG6EgEpwKggnAM5AEVEQzuWMjdHz2bbz7e_Rhl7v2qNv4kedCZLLaClVZJEzq_JtCN463fn6AP6kKdFDeDqGp4fw9CW8KHk6S2pr7T9dyZxKptgfYDZpsg</recordid><startdate>20220901</startdate><enddate>20220901</enddate><creator>Wang, Hsiang-Chun</creator><creator>Pu, Taofei</creator><creator>Li, Xiaobo</creator><creator>Liu, Chia-Hao</creator><creator>Wu, JunYe</creator><creator>Yang, Jiaying</creator><creator>Zhang, Ziyue</creator><creator>Lu, Youming</creator><creator>Wang, Qi</creator><creator>Song, Lijun</creator><creator>Chiu, Hsien-Chin</creator><creator>Ao, Jin-Ping</creator><creator>Liu, Xinke</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3861-8992</orcidid><orcidid>https://orcid.org/0000-0003-1068-5798</orcidid><orcidid>https://orcid.org/0000-0002-8964-7518</orcidid><orcidid>https://orcid.org/0000-0002-3472-5945</orcidid><orcidid>https://orcid.org/0000-0002-0549-3508</orcidid><orcidid>https://orcid.org/0000-0001-8222-809X</orcidid><orcidid>https://orcid.org/0000-0003-1685-0168</orcidid><orcidid>https://orcid.org/0000-0001-7129-1974</orcidid></search><sort><creationdate>20220901</creationdate><title>High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate</title><author>Wang, Hsiang-Chun ; Pu, Taofei ; Li, Xiaobo ; Liu, Chia-Hao ; Wu, JunYe ; Yang, Jiaying ; Zhang, Ziyue ; Lu, Youming ; Wang, Qi ; Song, Lijun ; Chiu, Hsien-Chin ; Ao, Jin-Ping ; Liu, Xinke</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-da928d059adff6253634f363738aad8f4dd4d77ac7417040aafda64dda7ff533</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>AlGaN/GaN HEMT</topic><topic>Aluminum gallium nitrides</topic><topic>Epitaxial growth</topic><topic>Etching</topic><topic>free-standing GaN substrate</topic><topic>Gallium nitride</topic><topic>Gallium nitrides</topic><topic>HEMTs</topic><topic>High electron mobility transistors</topic><topic>Leakage current</topic><topic>Logic gates</topic><topic>normally-OFF operation</topic><topic>p-GaN gate</topic><topic>self-terminated etching</topic><topic>Semiconductor devices</topic><topic>Silicon substrates</topic><topic>Substrates</topic><topic>Wide band gap semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Hsiang-Chun</creatorcontrib><creatorcontrib>Pu, Taofei</creatorcontrib><creatorcontrib>Li, Xiaobo</creatorcontrib><creatorcontrib>Liu, Chia-Hao</creatorcontrib><creatorcontrib>Wu, JunYe</creatorcontrib><creatorcontrib>Yang, Jiaying</creatorcontrib><creatorcontrib>Zhang, Ziyue</creatorcontrib><creatorcontrib>Lu, Youming</creatorcontrib><creatorcontrib>Wang, Qi</creatorcontrib><creatorcontrib>Song, Lijun</creatorcontrib><creatorcontrib>Chiu, Hsien-Chin</creatorcontrib><creatorcontrib>Ao, Jin-Ping</creatorcontrib><creatorcontrib>Liu, Xinke</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, Hsiang-Chun</au><au>Pu, Taofei</au><au>Li, Xiaobo</au><au>Liu, Chia-Hao</au><au>Wu, JunYe</au><au>Yang, Jiaying</au><au>Zhang, Ziyue</au><au>Lu, Youming</au><au>Wang, Qi</au><au>Song, Lijun</au><au>Chiu, Hsien-Chin</au><au>Ao, Jin-Ping</au><au>Liu, Xinke</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2022-09-01</date><risdate>2022</risdate><volume>69</volume><issue>9</issue><spage>4859</spage><epage>4863</epage><pages>4859-4863</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A normally- OFF AlGaN/GaN high-electron-mobility transistor (HEMT) with p-GaN gate was fabricated on free-standing GaN substrate. The self-terminated etching technology was achieved by combining with AlN stop layer and SF 6 -based etching gas. Compared with HEMT on Si substrate (Si-HEMT), the HEMT on GaN substrate (GaN-HEMT) demonstrated the higher current density, lower subthreshold swing (SS), lower drain leakage current, and lower static and dynamic ON-resistance that were ascribed to the lower dislocation and less defect on free-standing GaN substrate. Meanwhile, the excellent <inline-formula> <tex-math notation="LaTeX">{V}_{\mathrm{th}} </tex-math></inline-formula> stability up to 175 °C and uniformity was demonstrated. Also, higher breakdown voltage (BV) of 683 V was measured, which was higher than 507 V for Si-HEMT. Hence, a normally- OFF AlGaN/GaN HEMT on free-standing GaN substrate shows good potential in power application.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2022.3193991</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-3861-8992</orcidid><orcidid>https://orcid.org/0000-0003-1068-5798</orcidid><orcidid>https://orcid.org/0000-0002-8964-7518</orcidid><orcidid>https://orcid.org/0000-0002-3472-5945</orcidid><orcidid>https://orcid.org/0000-0002-0549-3508</orcidid><orcidid>https://orcid.org/0000-0001-8222-809X</orcidid><orcidid>https://orcid.org/0000-0003-1685-0168</orcidid><orcidid>https://orcid.org/0000-0001-7129-1974</orcidid></addata></record> |
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| subjects | AlGaN/GaN HEMT Aluminum gallium nitrides Epitaxial growth Etching free-standing GaN substrate Gallium nitride Gallium nitrides HEMTs High electron mobility transistors Leakage current Logic gates normally-OFF operation p-GaN gate self-terminated etching Semiconductor devices Silicon substrates Substrates Wide band gap semiconductors |
| title | High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate |
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