Temperature-Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs
Narrow-channel accumulated body nMOSFET devices with p-type side gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate biasing ( {V}_{\text {side}} ). The subthreshold slope (SS) and drain induced barrier lowering (DIBL) decrease and thres...
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Veröffentlicht in: | IEEE transactions on electron devices 2022-08, Vol.69 (8), p.4138-4143 |
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description | Narrow-channel accumulated body nMOSFET devices with p-type side gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate biasing ( {V}_{\text {side}} ). The subthreshold slope (SS) and drain induced barrier lowering (DIBL) decrease and threshold voltage ( {V}_{t} ) increases linearly with reduced temperature and reduced side-gate bias. Detailed analysis on a 27 nm \times 78 nm (width \times length) device shows SS decreasing from 115 mV/dec at 400 K to 90 mV/dec at 300 K and down to 36 mV/dec at 100 K, DIBL decreasing by approximately 10 mV/V for each 100 K reduction in operating temperature, and {V}_{t} increasing from 0.42 to 0.61 V as the temperature is reduced from 400 to 100 K. {V}_{t} can be adjusted from ~0.3 to ~1.1 V with ~0.3 V/V sensitivity by depletion or accumulation of the body of the device using {V}_{\text {side}} . This high level of tunability allows electronic control of {V}_{t} and drive current for variable temperature operation in a wide temperature range with extremely low leakage currents ( |
doi_str_mv | 10.1109/TED.2022.3184906 |
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fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TED_2022_3184906</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9810200</ieee_id><sourcerecordid>2695154704</sourcerecordid><originalsourceid>FETCH-LOGICAL-c333t-13bef921aeb40e15f8d05b251bba2cfecdb32e921e5a6b24b7137feb5829d05c3</originalsourceid><addsrcrecordid>eNo9kLtPwzAQhy0EEqWwI7FYYk7xM4-xtOUhFXUgsFq2c2lTpUmwnaH_Pa6KmE53-n53ug-he0pmlJLiqVwtZ4wwNuM0FwVJL9CESpklRSrSSzQhhOZJwXN-jW6838c2FYJNUFvCYQCnw-ggWcIAXQVdwIuddtoGcI0PjfVYdxVetWCD633QcYTLnQO_69sKf_dt0FvA5dg13Rb3NZ5bOx7GVgeo8HNfHfHH5vNlVfpbdFXr1sPdX52irzhevCXrzev7Yr5OLOc8JJQbqAtGNRhBgMo6r4g0TFJjNLM12MpwBhEAqVPDhMkoz2owMmdFJC2fosfz3sH1PyP4oPb96Lp4UrG0kFSKjIhIkTNl41PeQa0G1xy0OypK1Mmpik7Vyan6cxojD-dIAwD_eJFTwgjhv03qdAM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2695154704</pqid></control><display><type>article</type><title>Temperature-Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs</title><source>IEEE Electronic Library (IEL)</source><creator>Talukder, A. B. M. Hasan ; Smith, Brittany ; Akbulut, Mustafa ; Dirisaglik, Faruk ; Silva, Helena ; Gokirmak, Ali</creator><creatorcontrib>Talukder, A. B. M. Hasan ; Smith, Brittany ; Akbulut, Mustafa ; Dirisaglik, Faruk ; Silva, Helena ; Gokirmak, Ali</creatorcontrib><description><![CDATA[Narrow-channel accumulated body nMOSFET devices with p-type side gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate biasing (<inline-formula> <tex-math notation="LaTeX">{V}_{\text {side}} </tex-math></inline-formula>). The subthreshold slope (SS) and drain induced barrier lowering (DIBL) decrease and threshold voltage (<inline-formula> <tex-math notation="LaTeX">{V}_{t} </tex-math></inline-formula>) increases linearly with reduced temperature and reduced side-gate bias. Detailed analysis on a 27 nm <inline-formula> <tex-math notation="LaTeX">\times </tex-math></inline-formula> 78 nm (width <inline-formula> <tex-math notation="LaTeX">\times </tex-math></inline-formula> length) device shows SS decreasing from 115 mV/dec at 400 K to 90 mV/dec at 300 K and down to 36 mV/dec at 100 K, DIBL decreasing by approximately 10 mV/V for each 100 K reduction in operating temperature, and <inline-formula> <tex-math notation="LaTeX">{V}_{t} </tex-math></inline-formula> increasing from 0.42 to 0.61 V as the temperature is reduced from 400 to 100 K. <inline-formula> <tex-math notation="LaTeX">{V}_{t} </tex-math></inline-formula> can be adjusted from ~0.3 to ~1.1 V with ~0.3 V/V sensitivity by depletion or accumulation of the body of the device using <inline-formula> <tex-math notation="LaTeX">{V}_{\text {side}} </tex-math></inline-formula>. This high level of tunability allows electronic control of <inline-formula> <tex-math notation="LaTeX">{V}_{t} </tex-math></inline-formula> and drive current for variable temperature operation in a wide temperature range with extremely low leakage currents (<10 −13 A).]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2022.3184906</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Accumulated body MOSFET ; cryogenic CMOS ; Depletion ; drain induced barrier lowering (DIBL) ; Electronic control ; Leakage current ; Logic gates ; MOSFET ; MOSFETs ; Operating temperature ; Sensitivity ; side gate ; subthreshold slope (SS) ; Temperature dependence ; Temperature distribution ; Temperature sensors ; Threshold voltage ; threshold voltage tuning ; Tuning</subject><ispartof>IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4138-4143</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c333t-13bef921aeb40e15f8d05b251bba2cfecdb32e921e5a6b24b7137feb5829d05c3</citedby><cites>FETCH-LOGICAL-c333t-13bef921aeb40e15f8d05b251bba2cfecdb32e921e5a6b24b7137feb5829d05c3</cites><orcidid>0000-0003-2147-8735 ; 0000-0001-6356-5402 ; 0000-0001-5940-899X ; 0000-0001-6493-875X ; 0000-0003-4660-5980</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9810200$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9810200$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Talukder, A. B. M. Hasan</creatorcontrib><creatorcontrib>Smith, Brittany</creatorcontrib><creatorcontrib>Akbulut, Mustafa</creatorcontrib><creatorcontrib>Dirisaglik, Faruk</creatorcontrib><creatorcontrib>Silva, Helena</creatorcontrib><creatorcontrib>Gokirmak, Ali</creatorcontrib><title>Temperature-Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[Narrow-channel accumulated body nMOSFET devices with p-type side gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate biasing (<inline-formula> <tex-math notation="LaTeX">{V}_{\text {side}} </tex-math></inline-formula>). The subthreshold slope (SS) and drain induced barrier lowering (DIBL) decrease and threshold voltage (<inline-formula> <tex-math notation="LaTeX">{V}_{t} </tex-math></inline-formula>) increases linearly with reduced temperature and reduced side-gate bias. Detailed analysis on a 27 nm <inline-formula> <tex-math notation="LaTeX">\times </tex-math></inline-formula> 78 nm (width <inline-formula> <tex-math notation="LaTeX">\times </tex-math></inline-formula> length) device shows SS decreasing from 115 mV/dec at 400 K to 90 mV/dec at 300 K and down to 36 mV/dec at 100 K, DIBL decreasing by approximately 10 mV/V for each 100 K reduction in operating temperature, and <inline-formula> <tex-math notation="LaTeX">{V}_{t} </tex-math></inline-formula> increasing from 0.42 to 0.61 V as the temperature is reduced from 400 to 100 K. <inline-formula> <tex-math notation="LaTeX">{V}_{t} </tex-math></inline-formula> can be adjusted from ~0.3 to ~1.1 V with ~0.3 V/V sensitivity by depletion or accumulation of the body of the device using <inline-formula> <tex-math notation="LaTeX">{V}_{\text {side}} </tex-math></inline-formula>. This high level of tunability allows electronic control of <inline-formula> <tex-math notation="LaTeX">{V}_{t} </tex-math></inline-formula> and drive current for variable temperature operation in a wide temperature range with extremely low leakage currents (<10 −13 A).]]></description><subject>Accumulated body MOSFET</subject><subject>cryogenic CMOS</subject><subject>Depletion</subject><subject>drain induced barrier lowering (DIBL)</subject><subject>Electronic control</subject><subject>Leakage current</subject><subject>Logic gates</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Operating temperature</subject><subject>Sensitivity</subject><subject>side gate</subject><subject>subthreshold slope (SS)</subject><subject>Temperature dependence</subject><subject>Temperature distribution</subject><subject>Temperature sensors</subject><subject>Threshold voltage</subject><subject>threshold voltage tuning</subject><subject>Tuning</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kLtPwzAQhy0EEqWwI7FYYk7xM4-xtOUhFXUgsFq2c2lTpUmwnaH_Pa6KmE53-n53ug-he0pmlJLiqVwtZ4wwNuM0FwVJL9CESpklRSrSSzQhhOZJwXN-jW6838c2FYJNUFvCYQCnw-ggWcIAXQVdwIuddtoGcI0PjfVYdxVetWCD633QcYTLnQO_69sKf_dt0FvA5dg13Rb3NZ5bOx7GVgeo8HNfHfHH5vNlVfpbdFXr1sPdX52irzhevCXrzev7Yr5OLOc8JJQbqAtGNRhBgMo6r4g0TFJjNLM12MpwBhEAqVPDhMkoz2owMmdFJC2fosfz3sH1PyP4oPb96Lp4UrG0kFSKjIhIkTNl41PeQa0G1xy0OypK1Mmpik7Vyan6cxojD-dIAwD_eJFTwgjhv03qdAM</recordid><startdate>20220801</startdate><enddate>20220801</enddate><creator>Talukder, A. B. M. Hasan</creator><creator>Smith, Brittany</creator><creator>Akbulut, Mustafa</creator><creator>Dirisaglik, Faruk</creator><creator>Silva, Helena</creator><creator>Gokirmak, Ali</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-2147-8735</orcidid><orcidid>https://orcid.org/0000-0001-6356-5402</orcidid><orcidid>https://orcid.org/0000-0001-5940-899X</orcidid><orcidid>https://orcid.org/0000-0001-6493-875X</orcidid><orcidid>https://orcid.org/0000-0003-4660-5980</orcidid></search><sort><creationdate>20220801</creationdate><title>Temperature-Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs</title><author>Talukder, A. B. M. Hasan ; Smith, Brittany ; Akbulut, Mustafa ; Dirisaglik, Faruk ; Silva, Helena ; Gokirmak, Ali</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c333t-13bef921aeb40e15f8d05b251bba2cfecdb32e921e5a6b24b7137feb5829d05c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Accumulated body MOSFET</topic><topic>cryogenic CMOS</topic><topic>Depletion</topic><topic>drain induced barrier lowering (DIBL)</topic><topic>Electronic control</topic><topic>Leakage current</topic><topic>Logic gates</topic><topic>MOSFET</topic><topic>MOSFETs</topic><topic>Operating temperature</topic><topic>Sensitivity</topic><topic>side gate</topic><topic>subthreshold slope (SS)</topic><topic>Temperature dependence</topic><topic>Temperature distribution</topic><topic>Temperature sensors</topic><topic>Threshold voltage</topic><topic>threshold voltage tuning</topic><topic>Tuning</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Talukder, A. B. M. Hasan</creatorcontrib><creatorcontrib>Smith, Brittany</creatorcontrib><creatorcontrib>Akbulut, Mustafa</creatorcontrib><creatorcontrib>Dirisaglik, Faruk</creatorcontrib><creatorcontrib>Silva, Helena</creatorcontrib><creatorcontrib>Gokirmak, Ali</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Talukder, A. B. M. Hasan</au><au>Smith, Brittany</au><au>Akbulut, Mustafa</au><au>Dirisaglik, Faruk</au><au>Silva, Helena</au><au>Gokirmak, Ali</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature-Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2022-08-01</date><risdate>2022</risdate><volume>69</volume><issue>8</issue><spage>4138</spage><epage>4143</epage><pages>4138-4143</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract><![CDATA[Narrow-channel accumulated body nMOSFET devices with p-type side gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate biasing (<inline-formula> <tex-math notation="LaTeX">{V}_{\text {side}} </tex-math></inline-formula>). The subthreshold slope (SS) and drain induced barrier lowering (DIBL) decrease and threshold voltage (<inline-formula> <tex-math notation="LaTeX">{V}_{t} </tex-math></inline-formula>) increases linearly with reduced temperature and reduced side-gate bias. Detailed analysis on a 27 nm <inline-formula> <tex-math notation="LaTeX">\times </tex-math></inline-formula> 78 nm (width <inline-formula> <tex-math notation="LaTeX">\times </tex-math></inline-formula> length) device shows SS decreasing from 115 mV/dec at 400 K to 90 mV/dec at 300 K and down to 36 mV/dec at 100 K, DIBL decreasing by approximately 10 mV/V for each 100 K reduction in operating temperature, and <inline-formula> <tex-math notation="LaTeX">{V}_{t} </tex-math></inline-formula> increasing from 0.42 to 0.61 V as the temperature is reduced from 400 to 100 K. <inline-formula> <tex-math notation="LaTeX">{V}_{t} </tex-math></inline-formula> can be adjusted from ~0.3 to ~1.1 V with ~0.3 V/V sensitivity by depletion or accumulation of the body of the device using <inline-formula> <tex-math notation="LaTeX">{V}_{\text {side}} </tex-math></inline-formula>. This high level of tunability allows electronic control of <inline-formula> <tex-math notation="LaTeX">{V}_{t} </tex-math></inline-formula> and drive current for variable temperature operation in a wide temperature range with extremely low leakage currents (<10 −13 A).]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2022.3184906</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-2147-8735</orcidid><orcidid>https://orcid.org/0000-0001-6356-5402</orcidid><orcidid>https://orcid.org/0000-0001-5940-899X</orcidid><orcidid>https://orcid.org/0000-0001-6493-875X</orcidid><orcidid>https://orcid.org/0000-0003-4660-5980</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Accumulated body MOSFET cryogenic CMOS Depletion drain induced barrier lowering (DIBL) Electronic control Leakage current Logic gates MOSFET MOSFETs Operating temperature Sensitivity side gate subthreshold slope (SS) Temperature dependence Temperature distribution Temperature sensors Threshold voltage threshold voltage tuning Tuning |
title | Temperature-Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T20%3A59%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Temperature-Dependent%20Characteristics%20and%20Electrostatic%20Threshold%20Voltage%20Tuning%20of%20Accumulated%20Body%20MOSFETs&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Talukder,%20A.%20B.%20M.%20Hasan&rft.date=2022-08-01&rft.volume=69&rft.issue=8&rft.spage=4138&rft.epage=4143&rft.pages=4138-4143&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2022.3184906&rft_dat=%3Cproquest_RIE%3E2695154704%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2695154704&rft_id=info:pmid/&rft_ieee_id=9810200&rfr_iscdi=true |