Two-Stage Ku-Band Graphene Low Noise Amplifier MMIC With Improved Fabrication Process
Graphene has great application potential in radio frequency (RF) electronics such as low-noise amplifier (LNA) due to its amazing electrical properties. In this work, a graphene-transfer after process was developed to fabricate two-stage graphene LNA monolithic microwave integrated circuits (MMICs)...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 2022-03, Vol.69 (3), p.1596-1599 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1599 |
|---|---|
| container_issue | 3 |
| container_start_page | 1596 |
| container_title | IEEE transactions on electron devices |
| container_volume | 69 |
| creator | Yu, Cui He, Zezhao Song, Xubo Gao, Xuedong Liu, Qingbin Zhang, Yanhui Yu, Guanghui Han, Tingting Bu, Aimin Cai, Shujun Feng, Zhihong |
| description | Graphene has great application potential in radio frequency (RF) electronics such as low-noise amplifier (LNA) due to its amazing electrical properties. In this work, a graphene-transfer after process was developed to fabricate two-stage graphene LNA monolithic microwave integrated circuits (MMICs) on sapphire substrate to reduce possible damage to the graphene material in the device fabrication process. Using microstrip lines, inductances, and capacitances as input-output, and interstage impedance match networks, the two-stage Ku -band graphene LNA MMIC was obtained with a 10.2 dB maximum gain at 12.7 GHz, and 4.2 dB minimum noise figure at 12.5 GHz. |
| doi_str_mv | 10.1109/TED.2022.3145759 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TED_2022_3145759</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9704862</ieee_id><sourcerecordid>2635045683</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-5e3c2d9a1a2676fcf9845b0616a866b4ce09bf25bc55d14aba00e503b9c1e06a3</originalsourceid><addsrcrecordid>eNo9kE1PAjEQhhujiYjeTbw08bzY790eEQGJoCZCPDbd7qwsgS22i8R_7xKIp8kkz_vO5EHolpIepUQ_zIdPPUYY63EqZCr1GepQKdNEK6HOUYcQmiWaZ_wSXcW4alclBOugxXzvk4_GfgF-2SWPti7wONjtEmrAU7_Hr76KgPub7boqKwh4NpsM8GfVLPFksw3-Bwo8snmonG0qX-P34B3EeI0uSruOcHOaXbQYDeeD52T6Np4M-tPEMU2bRAJ3rNCWWqZSVbpSZ0LmRFFlM6Vy4YDovGQyd1IWVNjcEgKS8Fw7CkRZ3kX3x972le8dxMas_C7U7UnDFJdESJXxliJHygUfY4DSbEO1seHXUGIO8kwrzxzkmZO8NnJ3jFQA8I_rlIhMMf4HRpxpfQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2635045683</pqid></control><display><type>article</type><title>Two-Stage Ku-Band Graphene Low Noise Amplifier MMIC With Improved Fabrication Process</title><source>IEEE Electronic Library (IEL)</source><creator>Yu, Cui ; He, Zezhao ; Song, Xubo ; Gao, Xuedong ; Liu, Qingbin ; Zhang, Yanhui ; Yu, Guanghui ; Han, Tingting ; Bu, Aimin ; Cai, Shujun ; Feng, Zhihong</creator><creatorcontrib>Yu, Cui ; He, Zezhao ; Song, Xubo ; Gao, Xuedong ; Liu, Qingbin ; Zhang, Yanhui ; Yu, Guanghui ; Han, Tingting ; Bu, Aimin ; Cai, Shujun ; Feng, Zhihong</creatorcontrib><description>Graphene has great application potential in radio frequency (RF) electronics such as low-noise amplifier (LNA) due to its amazing electrical properties. In this work, a graphene-transfer after process was developed to fabricate two-stage graphene LNA monolithic microwave integrated circuits (MMICs) on sapphire substrate to reduce possible damage to the graphene material in the device fabrication process. Using microstrip lines, inductances, and capacitances as input-output, and interstage impedance match networks, the two-stage Ku -band graphene LNA MMIC was obtained with a 10.2 dB maximum gain at 12.7 GHz, and 4.2 dB minimum noise figure at 12.5 GHz.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2022.3145759</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Amplifiers ; Electrical properties ; Gain ; Graphene ; Integrated circuits ; Logic gates ; Low noise ; Metals ; Microstrip ; Microstrip transmission lines ; MMIC (circuits) ; monolithic microwave integrated circuit (MMIC) amplifiers ; Noise ; Noise levels ; Performance evaluation ; Radio frequency ; Sapphire ; Substrates ; two-stage</subject><ispartof>IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1596-1599</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-5e3c2d9a1a2676fcf9845b0616a866b4ce09bf25bc55d14aba00e503b9c1e06a3</citedby><cites>FETCH-LOGICAL-c291t-5e3c2d9a1a2676fcf9845b0616a866b4ce09bf25bc55d14aba00e503b9c1e06a3</cites><orcidid>0000-0002-6346-5943 ; 0000-0001-6939-4237 ; 0000-0001-7275-8388</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9704862$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9704862$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yu, Cui</creatorcontrib><creatorcontrib>He, Zezhao</creatorcontrib><creatorcontrib>Song, Xubo</creatorcontrib><creatorcontrib>Gao, Xuedong</creatorcontrib><creatorcontrib>Liu, Qingbin</creatorcontrib><creatorcontrib>Zhang, Yanhui</creatorcontrib><creatorcontrib>Yu, Guanghui</creatorcontrib><creatorcontrib>Han, Tingting</creatorcontrib><creatorcontrib>Bu, Aimin</creatorcontrib><creatorcontrib>Cai, Shujun</creatorcontrib><creatorcontrib>Feng, Zhihong</creatorcontrib><title>Two-Stage Ku-Band Graphene Low Noise Amplifier MMIC With Improved Fabrication Process</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Graphene has great application potential in radio frequency (RF) electronics such as low-noise amplifier (LNA) due to its amazing electrical properties. In this work, a graphene-transfer after process was developed to fabricate two-stage graphene LNA monolithic microwave integrated circuits (MMICs) on sapphire substrate to reduce possible damage to the graphene material in the device fabrication process. Using microstrip lines, inductances, and capacitances as input-output, and interstage impedance match networks, the two-stage Ku -band graphene LNA MMIC was obtained with a 10.2 dB maximum gain at 12.7 GHz, and 4.2 dB minimum noise figure at 12.5 GHz.</description><subject>Amplifiers</subject><subject>Electrical properties</subject><subject>Gain</subject><subject>Graphene</subject><subject>Integrated circuits</subject><subject>Logic gates</subject><subject>Low noise</subject><subject>Metals</subject><subject>Microstrip</subject><subject>Microstrip transmission lines</subject><subject>MMIC (circuits)</subject><subject>monolithic microwave integrated circuit (MMIC) amplifiers</subject><subject>Noise</subject><subject>Noise levels</subject><subject>Performance evaluation</subject><subject>Radio frequency</subject><subject>Sapphire</subject><subject>Substrates</subject><subject>two-stage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1PAjEQhhujiYjeTbw08bzY790eEQGJoCZCPDbd7qwsgS22i8R_7xKIp8kkz_vO5EHolpIepUQ_zIdPPUYY63EqZCr1GepQKdNEK6HOUYcQmiWaZ_wSXcW4alclBOugxXzvk4_GfgF-2SWPti7wONjtEmrAU7_Hr76KgPub7boqKwh4NpsM8GfVLPFksw3-Bwo8snmonG0qX-P34B3EeI0uSruOcHOaXbQYDeeD52T6Np4M-tPEMU2bRAJ3rNCWWqZSVbpSZ0LmRFFlM6Vy4YDovGQyd1IWVNjcEgKS8Fw7CkRZ3kX3x972le8dxMas_C7U7UnDFJdESJXxliJHygUfY4DSbEO1seHXUGIO8kwrzxzkmZO8NnJ3jFQA8I_rlIhMMf4HRpxpfQ</recordid><startdate>20220301</startdate><enddate>20220301</enddate><creator>Yu, Cui</creator><creator>He, Zezhao</creator><creator>Song, Xubo</creator><creator>Gao, Xuedong</creator><creator>Liu, Qingbin</creator><creator>Zhang, Yanhui</creator><creator>Yu, Guanghui</creator><creator>Han, Tingting</creator><creator>Bu, Aimin</creator><creator>Cai, Shujun</creator><creator>Feng, Zhihong</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-6346-5943</orcidid><orcidid>https://orcid.org/0000-0001-6939-4237</orcidid><orcidid>https://orcid.org/0000-0001-7275-8388</orcidid></search><sort><creationdate>20220301</creationdate><title>Two-Stage Ku-Band Graphene Low Noise Amplifier MMIC With Improved Fabrication Process</title><author>Yu, Cui ; He, Zezhao ; Song, Xubo ; Gao, Xuedong ; Liu, Qingbin ; Zhang, Yanhui ; Yu, Guanghui ; Han, Tingting ; Bu, Aimin ; Cai, Shujun ; Feng, Zhihong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-5e3c2d9a1a2676fcf9845b0616a866b4ce09bf25bc55d14aba00e503b9c1e06a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Amplifiers</topic><topic>Electrical properties</topic><topic>Gain</topic><topic>Graphene</topic><topic>Integrated circuits</topic><topic>Logic gates</topic><topic>Low noise</topic><topic>Metals</topic><topic>Microstrip</topic><topic>Microstrip transmission lines</topic><topic>MMIC (circuits)</topic><topic>monolithic microwave integrated circuit (MMIC) amplifiers</topic><topic>Noise</topic><topic>Noise levels</topic><topic>Performance evaluation</topic><topic>Radio frequency</topic><topic>Sapphire</topic><topic>Substrates</topic><topic>two-stage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yu, Cui</creatorcontrib><creatorcontrib>He, Zezhao</creatorcontrib><creatorcontrib>Song, Xubo</creatorcontrib><creatorcontrib>Gao, Xuedong</creatorcontrib><creatorcontrib>Liu, Qingbin</creatorcontrib><creatorcontrib>Zhang, Yanhui</creatorcontrib><creatorcontrib>Yu, Guanghui</creatorcontrib><creatorcontrib>Han, Tingting</creatorcontrib><creatorcontrib>Bu, Aimin</creatorcontrib><creatorcontrib>Cai, Shujun</creatorcontrib><creatorcontrib>Feng, Zhihong</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yu, Cui</au><au>He, Zezhao</au><au>Song, Xubo</au><au>Gao, Xuedong</au><au>Liu, Qingbin</au><au>Zhang, Yanhui</au><au>Yu, Guanghui</au><au>Han, Tingting</au><au>Bu, Aimin</au><au>Cai, Shujun</au><au>Feng, Zhihong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Two-Stage Ku-Band Graphene Low Noise Amplifier MMIC With Improved Fabrication Process</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2022-03-01</date><risdate>2022</risdate><volume>69</volume><issue>3</issue><spage>1596</spage><epage>1599</epage><pages>1596-1599</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Graphene has great application potential in radio frequency (RF) electronics such as low-noise amplifier (LNA) due to its amazing electrical properties. In this work, a graphene-transfer after process was developed to fabricate two-stage graphene LNA monolithic microwave integrated circuits (MMICs) on sapphire substrate to reduce possible damage to the graphene material in the device fabrication process. Using microstrip lines, inductances, and capacitances as input-output, and interstage impedance match networks, the two-stage Ku -band graphene LNA MMIC was obtained with a 10.2 dB maximum gain at 12.7 GHz, and 4.2 dB minimum noise figure at 12.5 GHz.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2022.3145759</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-6346-5943</orcidid><orcidid>https://orcid.org/0000-0001-6939-4237</orcidid><orcidid>https://orcid.org/0000-0001-7275-8388</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1596-1599 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_TED_2022_3145759 |
| source | IEEE Electronic Library (IEL) |
| subjects | Amplifiers Electrical properties Gain Graphene Integrated circuits Logic gates Low noise Metals Microstrip Microstrip transmission lines MMIC (circuits) monolithic microwave integrated circuit (MMIC) amplifiers Noise Noise levels Performance evaluation Radio frequency Sapphire Substrates two-stage |
| title | Two-Stage Ku-Band Graphene Low Noise Amplifier MMIC With Improved Fabrication Process |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T17%3A31%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Two-Stage%20Ku-Band%20Graphene%20Low%20Noise%20Amplifier%20MMIC%20With%20Improved%20Fabrication%20Process&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Yu,%20Cui&rft.date=2022-03-01&rft.volume=69&rft.issue=3&rft.spage=1596&rft.epage=1599&rft.pages=1596-1599&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2022.3145759&rft_dat=%3Cproquest_RIE%3E2635045683%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2635045683&rft_id=info:pmid/&rft_ieee_id=9704862&rfr_iscdi=true |