High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs

In this article, we present an in-depth high-temperature analysis of the long-term gate reliability in GaN-based power high-electron-mobility transistors (HEMTs) with p-type gate. Three different isolation process options, aimed at improving the time-dependent gate breakdown (TDGB), are proposed and...

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Veröffentlicht in:	IEEE transactions on electron devices 2021-11, Vol.68 (11), p.5701-5706
Hauptverfasser:	Millesimo, M., Fiegna, C., Posthuma, N., Borga, M., Bakeroot, B., Decoutere, S., Tallarico, A. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Breakdown Electric breakdown Electric potential Forward gate stress Gallium nitrides gate reliability HEMTs High electron mobility transistors High temperature isolation failure lifetime models Logic gates Mean time to failure Metals MODFETs p-GaN high-electron-mobility transistor (HEMT) Reliability Reliability analysis Stress Temperature Temperature dependence temperature dependency Time dependence time-dependent gate breakdown (TDGB) Voltage
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