Controlled Majority-Inverter Graph Logic With Highly Nonlinear, Self-Rectifying Memristor

In this article, for the first time, self-rectifying memristors are exploited for logic-in-memory computation. We report a Pt/TaO x /Ta memristor with salient self-rectifying bipolar features (10 4 ON-/ OFF-ratio, 10 5 rectification ratio, 10 5 nonlinearity, and ~1 pA leakage current), which could support a large passive crossbar array up to 160 Mb with the premise of 10% read margin. Moreover, we propose and experimentally validate a controlled majority-inverter graph logic method based on the self-rectifying switching behaviors, with advantages in computation complexity. Our work is a step forward toward in-memory computing in high-density or even 3-D memristor architectures.