Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory
As one of the key aspects in the reliability of redox-based resistive switching memories (ReRAMs), maximizing their endurance is of high relevance for industrial applications. The major limitation regarding endurance is considered the excessive generation of oxygen vacancies during cycling, which ev...
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| Veröffentlicht in: | IEEE transactions on electron devices 2021-03, Vol.68 (3), p.1024-1030 |
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| container_title | IEEE transactions on electron devices |
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| creator | Wiefels, Stefan Von Witzleben, Moritz Huttemann, Michael Bottger, Ulrich Waser, Rainer Menzel, Stephan |
| description | As one of the key aspects in the reliability of redox-based resistive switching memories (ReRAMs), maximizing their endurance is of high relevance for industrial applications. The major limitation regarding endurance is considered the excessive generation of oxygen vacancies during cycling, which eventually leads to irreversible RESET failures. Thus, the endurance could be increased by using combinations of switching oxide and ohmic electrode (OE) metal that provides a high barrier for the generation of oxygen vacancies [defect formation energy (DFE)]. In this work, we present a sophisticated programming algorithm that aims to maximize the endurance within reasonable measurement time. Using this algorithm, we compare ReRAM devices with four different OE metals and confirm the theoretically predicted trend. Thus, our work provides valuable information for device engineering toward higher endurance. |
| doi_str_mv | 10.1109/TED.2021.3049765 |
| format | Article |
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The major limitation regarding endurance is considered the excessive generation of oxygen vacancies during cycling, which eventually leads to irreversible RESET failures. Thus, the endurance could be increased by using combinations of switching oxide and ohmic electrode (OE) metal that provides a high barrier for the generation of oxygen vacancies [defect formation energy (DFE)]. In this work, we present a sophisticated programming algorithm that aims to maximize the endurance within reasonable measurement time. Using this algorithm, we compare ReRAM devices with four different OE metals and confirm the theoretically predicted trend. 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| subjects | Algorithms Chemicals Defect formation energy (DFE) Electric potential Electrodes endurance endurance algorithm Fatigue tests Free energy Hafnium Heat of formation Industrial applications OxRAM redox-based resistive switching memory (ReRAM) Reliability Reliability aspects Switches Switching Vacancies valence change mechanism (VCM) Zirconium |
| title | Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory |
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