An 18.6-μm-Pitch Gate Driver Using a-IGZO TFTs for Ultrahigh-Definition AR/VR Displays
We report the design and fabrication of a high-speed and ultranarrow pitch gate driver with amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). At a supply voltage of 10 V, the gate driver operates with a pulsewidth of {1}~\boldsymbol \mu \text{s} and corresponds to an operati...
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| Veröffentlicht in: | IEEE transactions on electron devices 2020-11, Vol.67 (11), p.4929-4933 |
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| container_title | IEEE transactions on electron devices |
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| creator | Chen, Yuanfeng Kim, Hyunho Lee, Jiseob Lee, Suhui Do, Youngbin Choi, Munsu Jang, Jin |
| description | We report the design and fabrication of a high-speed and ultranarrow pitch gate driver with amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). At a supply voltage of 10 V, the gate driver operates with a pulsewidth of {1}~\boldsymbol \mu \text{s} and corresponds to an operating frequency of 500 kHz, which is compatible with an 8k4k resolution display operated at 240 Hz. It is also ultrasmall in physical size with merely 18.6~\boldsymbol \mu \text{m} in width (pitch) and 530~\boldsymbol \mu \text{m} in length that makes it suitable for small size, ultrahigh definition (UHD), and narrow bezel displays with pixel density up to 2700 pixel per inch (ppi) for augmented reality and virtual reality (AR/VR) applications. The fabricated gate driver exhibits the rising time of ~360 ns and falling time of ~430 ns at 10 V with no ripples and degradation after the 480th stage. This effort demonstrates the potential of dual-gate a-IGZO TFTs for high-speed high-density display circuit integration. |
| doi_str_mv | 10.1109/TED.2020.3023069 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TED_2020_3023069</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9204667</ieee_id><sourcerecordid>2454470089</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-50de1583076eaa8bd871e86971aae97e04821961fadc48aac3a363624f15dbde3</originalsourceid><addsrcrecordid>eNo9kF1LwzAUhoMoOKf3gjcBr9OdfDRNLse-HAwmo1PwpmRtumVs7UyqsP_mb_A32bHh1eE9PO858CD0SCGiFHQvHQ0jBgwiDoyD1FeoQ-M4IVoKeY06AFQRzRW_RXchbNsohWAd9N6vMFWRJL8_e_LqmnyDJ6axeOjdt_V4GVy1xoZMJx9znI7TgMu63e4abzZuvSFDW7rKNa6ucH_Re1vgoQuHnTmGe3RTml2wD5fZRcvxKB28kNl8Mh30ZyRnmjYkhsLSWHFIpDVGrQqVUKukTqgxVicWhGJUS1qaIhfKmJwbLrlkoqRxsSos76Ln892Drz-_bGiybf3lq_ZlxkQsRAKgdEvBmcp9HYK3ZXbwbm_8MaOQnfRlrb7spC-76GsrT-eKs9b-45qBkDLhfxHYaQs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2454470089</pqid></control><display><type>article</type><title>An 18.6-μm-Pitch Gate Driver Using a-IGZO TFTs for Ultrahigh-Definition AR/VR Displays</title><source>IEEE Electronic Library (IEL)</source><creator>Chen, Yuanfeng ; Kim, Hyunho ; Lee, Jiseob ; Lee, Suhui ; Do, Youngbin ; Choi, Munsu ; Jang, Jin</creator><creatorcontrib>Chen, Yuanfeng ; Kim, Hyunho ; Lee, Jiseob ; Lee, Suhui ; Do, Youngbin ; Choi, Munsu ; Jang, Jin</creatorcontrib><description><![CDATA[We report the design and fabrication of a high-speed and ultranarrow pitch gate driver with amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). At a supply voltage of 10 V, the gate driver operates with a pulsewidth of <inline-formula> <tex-math notation="LaTeX">{1}~\boldsymbol \mu \text{s} </tex-math></inline-formula> and corresponds to an operating frequency of 500 kHz, which is compatible with an 8k4k resolution display operated at 240 Hz. It is also ultrasmall in physical size with merely <inline-formula> <tex-math notation="LaTeX">18.6~\boldsymbol \mu \text{m} </tex-math></inline-formula> in width (pitch) and <inline-formula> <tex-math notation="LaTeX">530~\boldsymbol \mu \text{m} </tex-math></inline-formula> in length that makes it suitable for small size, ultrahigh definition (UHD), and narrow bezel displays with pixel density up to 2700 pixel per inch (ppi) for augmented reality and virtual reality (AR/VR) applications. The fabricated gate driver exhibits the rising time of ~360 ns and falling time of ~430 ns at 10 V with no ripples and degradation after the 480th stage. This effort demonstrates the potential of dual-gate a-IGZO TFTs for high-speed high-density display circuit integration.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2020.3023069</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Active matrix ; amorphous indium-gallium-zinc-oxide (a-IGZO) ; Augmented reality ; Capacitors ; Circuits ; Clocks ; Density ; Displays ; Gallium ; gate driver ; Gate drivers ; High speed ; Indium gallium zinc oxide ; Logic gates ; Pixels ; Robustness ; Semiconductor devices ; Thin film transistors ; thin-film transistor (TFT) ; Threshold voltage ; Virtual reality</subject><ispartof>IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4929-4933</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-50de1583076eaa8bd871e86971aae97e04821961fadc48aac3a363624f15dbde3</citedby><cites>FETCH-LOGICAL-c291t-50de1583076eaa8bd871e86971aae97e04821961fadc48aac3a363624f15dbde3</cites><orcidid>0000-0001-5850-9414 ; 0000-0001-9200-0830 ; 0000-0003-0999-3662 ; 0000-0001-5924-5713 ; 0000-0002-7572-5669 ; 0000-0003-4547-5707</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9204667$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9204667$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chen, Yuanfeng</creatorcontrib><creatorcontrib>Kim, Hyunho</creatorcontrib><creatorcontrib>Lee, Jiseob</creatorcontrib><creatorcontrib>Lee, Suhui</creatorcontrib><creatorcontrib>Do, Youngbin</creatorcontrib><creatorcontrib>Choi, Munsu</creatorcontrib><creatorcontrib>Jang, Jin</creatorcontrib><title>An 18.6-μm-Pitch Gate Driver Using a-IGZO TFTs for Ultrahigh-Definition AR/VR Displays</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[We report the design and fabrication of a high-speed and ultranarrow pitch gate driver with amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). At a supply voltage of 10 V, the gate driver operates with a pulsewidth of <inline-formula> <tex-math notation="LaTeX">{1}~\boldsymbol \mu \text{s} </tex-math></inline-formula> and corresponds to an operating frequency of 500 kHz, which is compatible with an 8k4k resolution display operated at 240 Hz. It is also ultrasmall in physical size with merely <inline-formula> <tex-math notation="LaTeX">18.6~\boldsymbol \mu \text{m} </tex-math></inline-formula> in width (pitch) and <inline-formula> <tex-math notation="LaTeX">530~\boldsymbol \mu \text{m} </tex-math></inline-formula> in length that makes it suitable for small size, ultrahigh definition (UHD), and narrow bezel displays with pixel density up to 2700 pixel per inch (ppi) for augmented reality and virtual reality (AR/VR) applications. The fabricated gate driver exhibits the rising time of ~360 ns and falling time of ~430 ns at 10 V with no ripples and degradation after the 480th stage. This effort demonstrates the potential of dual-gate a-IGZO TFTs for high-speed high-density display circuit integration.]]></description><subject>Active matrix</subject><subject>amorphous indium-gallium-zinc-oxide (a-IGZO)</subject><subject>Augmented reality</subject><subject>Capacitors</subject><subject>Circuits</subject><subject>Clocks</subject><subject>Density</subject><subject>Displays</subject><subject>Gallium</subject><subject>gate driver</subject><subject>Gate drivers</subject><subject>High speed</subject><subject>Indium gallium zinc oxide</subject><subject>Logic gates</subject><subject>Pixels</subject><subject>Robustness</subject><subject>Semiconductor devices</subject><subject>Thin film transistors</subject><subject>thin-film transistor (TFT)</subject><subject>Threshold voltage</subject><subject>Virtual reality</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kF1LwzAUhoMoOKf3gjcBr9OdfDRNLse-HAwmo1PwpmRtumVs7UyqsP_mb_A32bHh1eE9PO858CD0SCGiFHQvHQ0jBgwiDoyD1FeoQ-M4IVoKeY06AFQRzRW_RXchbNsohWAd9N6vMFWRJL8_e_LqmnyDJ6axeOjdt_V4GVy1xoZMJx9znI7TgMu63e4abzZuvSFDW7rKNa6ucH_Re1vgoQuHnTmGe3RTml2wD5fZRcvxKB28kNl8Mh30ZyRnmjYkhsLSWHFIpDVGrQqVUKukTqgxVicWhGJUS1qaIhfKmJwbLrlkoqRxsSos76Ln892Drz-_bGiybf3lq_ZlxkQsRAKgdEvBmcp9HYK3ZXbwbm_8MaOQnfRlrb7spC-76GsrT-eKs9b-45qBkDLhfxHYaQs</recordid><startdate>20201101</startdate><enddate>20201101</enddate><creator>Chen, Yuanfeng</creator><creator>Kim, Hyunho</creator><creator>Lee, Jiseob</creator><creator>Lee, Suhui</creator><creator>Do, Youngbin</creator><creator>Choi, Munsu</creator><creator>Jang, Jin</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5850-9414</orcidid><orcidid>https://orcid.org/0000-0001-9200-0830</orcidid><orcidid>https://orcid.org/0000-0003-0999-3662</orcidid><orcidid>https://orcid.org/0000-0001-5924-5713</orcidid><orcidid>https://orcid.org/0000-0002-7572-5669</orcidid><orcidid>https://orcid.org/0000-0003-4547-5707</orcidid></search><sort><creationdate>20201101</creationdate><title>An 18.6-μm-Pitch Gate Driver Using a-IGZO TFTs for Ultrahigh-Definition AR/VR Displays</title><author>Chen, Yuanfeng ; Kim, Hyunho ; Lee, Jiseob ; Lee, Suhui ; Do, Youngbin ; Choi, Munsu ; Jang, Jin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-50de1583076eaa8bd871e86971aae97e04821961fadc48aac3a363624f15dbde3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Active matrix</topic><topic>amorphous indium-gallium-zinc-oxide (a-IGZO)</topic><topic>Augmented reality</topic><topic>Capacitors</topic><topic>Circuits</topic><topic>Clocks</topic><topic>Density</topic><topic>Displays</topic><topic>Gallium</topic><topic>gate driver</topic><topic>Gate drivers</topic><topic>High speed</topic><topic>Indium gallium zinc oxide</topic><topic>Logic gates</topic><topic>Pixels</topic><topic>Robustness</topic><topic>Semiconductor devices</topic><topic>Thin film transistors</topic><topic>thin-film transistor (TFT)</topic><topic>Threshold voltage</topic><topic>Virtual reality</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Yuanfeng</creatorcontrib><creatorcontrib>Kim, Hyunho</creatorcontrib><creatorcontrib>Lee, Jiseob</creatorcontrib><creatorcontrib>Lee, Suhui</creatorcontrib><creatorcontrib>Do, Youngbin</creatorcontrib><creatorcontrib>Choi, Munsu</creatorcontrib><creatorcontrib>Jang, Jin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, Yuanfeng</au><au>Kim, Hyunho</au><au>Lee, Jiseob</au><au>Lee, Suhui</au><au>Do, Youngbin</au><au>Choi, Munsu</au><au>Jang, Jin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An 18.6-μm-Pitch Gate Driver Using a-IGZO TFTs for Ultrahigh-Definition AR/VR Displays</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2020-11-01</date><risdate>2020</risdate><volume>67</volume><issue>11</issue><spage>4929</spage><epage>4933</epage><pages>4929-4933</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract><![CDATA[We report the design and fabrication of a high-speed and ultranarrow pitch gate driver with amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). At a supply voltage of 10 V, the gate driver operates with a pulsewidth of <inline-formula> <tex-math notation="LaTeX">{1}~\boldsymbol \mu \text{s} </tex-math></inline-formula> and corresponds to an operating frequency of 500 kHz, which is compatible with an 8k4k resolution display operated at 240 Hz. It is also ultrasmall in physical size with merely <inline-formula> <tex-math notation="LaTeX">18.6~\boldsymbol \mu \text{m} </tex-math></inline-formula> in width (pitch) and <inline-formula> <tex-math notation="LaTeX">530~\boldsymbol \mu \text{m} </tex-math></inline-formula> in length that makes it suitable for small size, ultrahigh definition (UHD), and narrow bezel displays with pixel density up to 2700 pixel per inch (ppi) for augmented reality and virtual reality (AR/VR) applications. The fabricated gate driver exhibits the rising time of ~360 ns and falling time of ~430 ns at 10 V with no ripples and degradation after the 480th stage. This effort demonstrates the potential of dual-gate a-IGZO TFTs for high-speed high-density display circuit integration.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2020.3023069</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-5850-9414</orcidid><orcidid>https://orcid.org/0000-0001-9200-0830</orcidid><orcidid>https://orcid.org/0000-0003-0999-3662</orcidid><orcidid>https://orcid.org/0000-0001-5924-5713</orcidid><orcidid>https://orcid.org/0000-0002-7572-5669</orcidid><orcidid>https://orcid.org/0000-0003-4547-5707</orcidid></addata></record> |
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| subjects | Active matrix amorphous indium-gallium-zinc-oxide (a-IGZO) Augmented reality Capacitors Circuits Clocks Density Displays Gallium gate driver Gate drivers High speed Indium gallium zinc oxide Logic gates Pixels Robustness Semiconductor devices Thin film transistors thin-film transistor (TFT) Threshold voltage Virtual reality |
| title | An 18.6-μm-Pitch Gate Driver Using a-IGZO TFTs for Ultrahigh-Definition AR/VR Displays |
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