Annealing Effect on the Performance of Copper Oxide Resistive Memory Devices

In this article, the annealing effect on resistive switching (RS) characteristics of Al/CuO/indium tin oxide (ITO) resistive random access memory (RRAM) devices is investigated. The RRAM performance is highly sensitive to the annealing temperature of the CuO RS layer. RS characteristics are not obse...

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Veröffentlicht in:	IEEE transactions on electron devices 2020-03, Vol.67 (3), p.976-983
Hauptverfasser:	Hsu, Chih-Chieh, Lin, Yu-Sheng, Cheng, Chao-Wen, Jhang, Wun-Ciang
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing bipolar resistive switching (RS) Copper copper oxide Copper oxides electrical characteristics Grain size High resistance Indium tin oxides Low resistance Memory devices Optical switches Performance evaluation Random access memory Resistance RS memory Sputtering Switching Temperature
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