Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device
A SET-state conductance change in a hafnium-oxide resistive switching memory cell due to repeated read events is investigated. We characterize a read-induced conductance change at different read voltages and SET-state conductance levels. Our result shows that the read-induced conductance degradation...
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| Veröffentlicht in: | IEEE transactions on electron devices 2020-01, Vol.67 (1), p.113-117 |
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| creator | Su, Po-Cheng Jiang, Cheng-Min Chen, Yu-Jia Wang, Chih-Chieh Li, Kai-Shin Lin, Chao-Cheng Wang, Tahui |
| description | A SET-state conductance change in a hafnium-oxide resistive switching memory cell due to repeated read events is investigated. We characterize a read-induced conductance change at different read voltages and SET-state conductance levels. Our result shows that the read-induced conductance degradation exhibits a two-stage evolution with the read pulse number. A SET-state conductance decreases slightly in the first stage and then follows inverse power-law dependence on the read number in the second stage. The power factor is an exponential function of a read voltage without regard to the SET-state conductance level, and the read pulse number at the transition of the two stages is related to a read voltage and conductance level. An analytical model to describe the two-stage conductance evolution is proposed. The parameters in the model are extracted from measurement data. Our model is verified by good agreement between the modeled and measured results in a wide range of read pulse number, read voltage, and SET-state conductance level. |
| doi_str_mv | 10.1109/TED.2019.2953781 |
| format | Article |
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We characterize a read-induced conductance change at different read voltages and SET-state conductance levels. Our result shows that the read-induced conductance degradation exhibits a two-stage evolution with the read pulse number. A SET-state conductance decreases slightly in the first stage and then follows inverse power-law dependence on the read number in the second stage. The power factor is an exponential function of a read voltage without regard to the SET-state conductance level, and the read pulse number at the transition of the two stages is related to a read voltage and conductance level. An analytical model to describe the two-stage conductance evolution is proposed. The parameters in the model are extracted from measurement data. Our model is verified by good agreement between the modeled and measured results in a wide range of read pulse number, read voltage, and SET-state conductance level.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2019.2953781</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Analytical modeling ; Analytical models ; conductance change ; Degradation ; Dielectrics ; Electric potential ; Evolution ; Exponential functions ; Hafnium oxide ; Mathematical models ; Power factor ; Reactive power ; read ; Resistance ; resistive switching memory ; Semiconductor device measurement ; Switches ; Switching ; Voltage ; Voltage measurement</subject><ispartof>IEEE transactions on electron devices, 2020-01, Vol.67 (1), p.113-117</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-3a385940923d71c15a37efb6773730c253136b9de208a638d8bb6fc7022e11c33</citedby><cites>FETCH-LOGICAL-c291t-3a385940923d71c15a37efb6773730c253136b9de208a638d8bb6fc7022e11c33</cites><orcidid>0000-0001-8016-3907 ; 0000-0001-9515-4894</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8935500$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,778,782,794,27911,27912,54745</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8935500$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Su, Po-Cheng</creatorcontrib><creatorcontrib>Jiang, Cheng-Min</creatorcontrib><creatorcontrib>Chen, Yu-Jia</creatorcontrib><creatorcontrib>Wang, Chih-Chieh</creatorcontrib><creatorcontrib>Li, Kai-Shin</creatorcontrib><creatorcontrib>Lin, Chao-Cheng</creatorcontrib><creatorcontrib>Wang, Tahui</creatorcontrib><title>Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A SET-state conductance change in a hafnium-oxide resistive switching memory cell due to repeated read events is investigated. We characterize a read-induced conductance change at different read voltages and SET-state conductance levels. Our result shows that the read-induced conductance degradation exhibits a two-stage evolution with the read pulse number. A SET-state conductance decreases slightly in the first stage and then follows inverse power-law dependence on the read number in the second stage. The power factor is an exponential function of a read voltage without regard to the SET-state conductance level, and the read pulse number at the transition of the two stages is related to a read voltage and conductance level. An analytical model to describe the two-stage conductance evolution is proposed. The parameters in the model are extracted from measurement data. Our model is verified by good agreement between the modeled and measured results in a wide range of read pulse number, read voltage, and SET-state conductance level.</description><subject>Analytical modeling</subject><subject>Analytical models</subject><subject>conductance change</subject><subject>Degradation</subject><subject>Dielectrics</subject><subject>Electric potential</subject><subject>Evolution</subject><subject>Exponential functions</subject><subject>Hafnium oxide</subject><subject>Mathematical models</subject><subject>Power factor</subject><subject>Reactive power</subject><subject>read</subject><subject>Resistance</subject><subject>resistive switching memory</subject><subject>Semiconductor device measurement</subject><subject>Switches</subject><subject>Switching</subject><subject>Voltage</subject><subject>Voltage measurement</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kN1LwzAUxYMoOKfvgi8BnzuT3CZtHsecbjAZuPlc0vR2y-ja2bTT_fe2bPh0PzjnwPkR8sjZiHOmX9bT15FgXI-ElhDF_IoMuJRRoFWorsmAMR4HGmK4JXfe77pThaEYkHJcmuLUOGsK-lFlWLhyQ6ucfqLJgnmZtRYzupqug1VjGqSTqn81prTdvjXlBqkrqaEzk5eu3QfLX5dhZ_bON-6IdPXjGrvtM1_x6Czek5vcFB4fLnNIvt6m68ksWCzf55PxIrBC8yYAA7HUIdMCsohbLg1EmKcqiiACZoUEDirVGQoWGwVxFqepym3EhEDOLcCQPJ9zD3X13aJvkl3V1l1VnwgAkKFQSnUqdlbZuvK-xjw51G5v6lPCWdJTTTqqSU81uVDtLE9ni0PEf3msQUrG4A-ISXG2</recordid><startdate>202001</startdate><enddate>202001</enddate><creator>Su, Po-Cheng</creator><creator>Jiang, Cheng-Min</creator><creator>Chen, Yu-Jia</creator><creator>Wang, Chih-Chieh</creator><creator>Li, Kai-Shin</creator><creator>Lin, Chao-Cheng</creator><creator>Wang, Tahui</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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We characterize a read-induced conductance change at different read voltages and SET-state conductance levels. Our result shows that the read-induced conductance degradation exhibits a two-stage evolution with the read pulse number. A SET-state conductance decreases slightly in the first stage and then follows inverse power-law dependence on the read number in the second stage. The power factor is an exponential function of a read voltage without regard to the SET-state conductance level, and the read pulse number at the transition of the two stages is related to a read voltage and conductance level. An analytical model to describe the two-stage conductance evolution is proposed. The parameters in the model are extracted from measurement data. Our model is verified by good agreement between the modeled and measured results in a wide range of read pulse number, read voltage, and SET-state conductance level.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2019.2953781</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-8016-3907</orcidid><orcidid>https://orcid.org/0000-0001-9515-4894</orcidid></addata></record> |
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| subjects | Analytical modeling Analytical models conductance change Degradation Dielectrics Electric potential Evolution Exponential functions Hafnium oxide Mathematical models Power factor Reactive power read Resistance resistive switching memory Semiconductor device measurement Switches Switching Voltage Voltage measurement |
| title | Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device |
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