A Study of Effects of Metal Gate Composition on Performance in Advanced n-MOSFETs

This work investigates the effects of HfO 2 layer defects, formed by the Al atoms in the metal gate, on performance and reliability in advanced n-type metal-oxide-semiconductor field-effect transistors (n-MOSFETs) with different Al content in the gate stacks. Many groups have proposed theories (e.g....

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Veröffentlicht in:	IEEE transactions on electron devices 2019-08, Vol.66 (8), p.3286-3289
Hauptverfasser:	Lin, Yun-Hsuan, Lu, Ying-Hsin, Chang, Ting-Chang, Liao, Jih-Chien, Lin, Chein-Yu, Jin, Fu-Yuan, Lin, Yu-Shan, Ciou, Fong-Min, Chang, Yen-Cheng, Chang, Kai-Chun, Hung, Wei-Chun, Chen, Kuan-Hsu, Yeh, Chien-Hung, Kuo, Ting-Tzu
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Defects Degradation Field effect transistors Hafnium oxide Hot carriers stress Human computer interaction Hydrogen bonds Logic gates MOSFETs multi-<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">V th N-type semiconductors power law Reliability Semiconductor devices Silicon dioxide Stability Stacks Temperature measurement Tin
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