Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices
Leakage phenomena are increasingly affecting the performance of nanoelectronic devices, and therefore, advanced device simulators need to include them in an appropriate way. This paper presents the modeling and implementation of direct source-to-drain tunneling (S/D tunneling), gate leakage mechanis...
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| Veröffentlicht in: | IEEE transactions on electron devices 2019-03, Vol.66 (3), p.1145-1152 |
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| container_title | IEEE transactions on electron devices |
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| creator | Medina-Bailon, Cristina Padilla, Jose L. Sadi, Toufik Sampedro, Carlos Godoy, Andres Donetti, Luca Georgiev, Vihar P. Gamiz, Francisco Asenov, Asen |
| description | Leakage phenomena are increasingly affecting the performance of nanoelectronic devices, and therefore, advanced device simulators need to include them in an appropriate way. This paper presents the modeling and implementation of direct source-to-drain tunneling (S/D tunneling), gate leakage mechanisms (GLMs) accounting for both direct tunneling and trap-assisted tunneling, and nonlocal band-to-band tunneling (BTBT) phenomena in a multissubband ensemble Monte Carlo (MS-EMC) simulator along with their simultaneous application for the study of ultrascaled fully depleted silicon-on-insulator, double-gate silicon-on-insulator, and FinFET devices. We find that S/D tunneling is the prevalent phenomena for the three devices, and it is increasingly relevant for short-channel lengths. |
| doi_str_mv | 10.1109/TED.2019.2890985 |
| format | Article |
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This paper presents the modeling and implementation of direct source-to-drain tunneling (S/D tunneling), gate leakage mechanisms (GLMs) accounting for both direct tunneling and trap-assisted tunneling, and nonlocal band-to-band tunneling (BTBT) phenomena in a multissubband ensemble Monte Carlo (MS-EMC) simulator along with their simultaneous application for the study of ultrascaled fully depleted silicon-on-insulator, double-gate silicon-on-insulator, and FinFET devices. We find that S/D tunneling is the prevalent phenomena for the three devices, and it is increasingly relevant for short-channel lengths.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2019.2890985</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Band-to-band tunneling (BTBT) ; Computer simulation ; Current leakage ; Devices ; direct source-to-drain tunneling (S/D tunneling) ; double-gate silicon on insulator (DGSOI) ; Electric potential ; Electron traps ; FinFET ; FinFETs ; fully depleted silicon on insulator (FDSOI) ; gate leakage current ; Gates ; Logic gates ; Monte Carlo methods ; multissubband ensemble Monte Carlo (MS-EMC) ; Nanoelectronics ; Nanotechnology devices ; Silicon ; Silicon-on-insulator ; Simulators ; Tunneling</subject><ispartof>IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1145-1152</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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This paper presents the modeling and implementation of direct source-to-drain tunneling (S/D tunneling), gate leakage mechanisms (GLMs) accounting for both direct tunneling and trap-assisted tunneling, and nonlocal band-to-band tunneling (BTBT) phenomena in a multissubband ensemble Monte Carlo (MS-EMC) simulator along with their simultaneous application for the study of ultrascaled fully depleted silicon-on-insulator, double-gate silicon-on-insulator, and FinFET devices. 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| ispartof | IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1145-1152 |
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| subjects | Band-to-band tunneling (BTBT) Computer simulation Current leakage Devices direct source-to-drain tunneling (S/D tunneling) double-gate silicon on insulator (DGSOI) Electric potential Electron traps FinFET FinFETs fully depleted silicon on insulator (FDSOI) gate leakage current Gates Logic gates Monte Carlo methods multissubband ensemble Monte Carlo (MS-EMC) Nanoelectronics Nanotechnology devices Silicon Silicon-on-insulator Simulators Tunneling |
| title | Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices |
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