Nitrogen-Doped ZnO Film Fabricated Via Rapid Low-Temperature Atomic Layer Deposition for High-Performance ZnON Transistors

High-performance nitrogen-doped ZnO (ZnON)-based thin-film transistors (TFTs) were fabricated by atomic layer deposition (ALD) with a rapid purging time of only 5 s at a temperature as low as 150 °C. It is the first time to report ALD ZnON TFT using NH 3 as N source. It is found that ZnON TFT with a...

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Veröffentlicht in:	IEEE transactions on electron devices 2018-08, Vol.65 (8), p.3283-3290
Hauptverfasser:	Ding, Xingwei, Yang, Jun, Qin, Cunping, Yang, Xuyong, Ding, Tao, Zhang, Jianhua
Format:	Artikel
Sprache:	eng
Schlagworte:	Ammonia Atomic layer deposition Atomic layer epitaxy density of states (DOS) Doping II-VI semiconductor materials Low temperature Nitrogen nitrogen-doped ZnO (ZnON) thin-film transistors (TFTs) oxygen defects Purging Reaction mechanisms Semiconductor devices Stress Thermal stability Thin film transistors Transistors Zinc oxide
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