Characterizations of Enhancement-Mode Double Heterostructure GaN HEMTs With Gate Field Plates
With the purpose to increase the threshold voltage of the enhancement mode GaN high-electron mobility transistors, we fabricated devices with gate field plates on the p-GaN/AlGaN/GaN/AlGaN double heterostructures. We observed an existence of a subthreshold region from the current-voltage transfer cu...
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| Veröffentlicht in: | IEEE transactions on electron devices 2018-02, Vol.65 (2), p.488-492 |
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| container_title | IEEE transactions on electron devices |
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| creator | Lee, Chun-Hsun Lin, Wei-Ren Lee, Yu-Hsuan Huang, Jian-Jang |
| description | With the purpose to increase the threshold voltage of the enhancement mode GaN high-electron mobility transistors, we fabricated devices with gate field plates on the p-GaN/AlGaN/GaN/AlGaN double heterostructures. We observed an existence of a subthreshold region from the current-voltage transfer curves. The threshold voltage of the device extracted based on linear extrapolation method is much higher than that of a typical device without a gate field plate. We investigated electrical properties based on carrier distributions with the influence of gate electric field at different channel regions. |
| doi_str_mv | 10.1109/TED.2017.2786479 |
| format | Article |
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We investigated electrical properties based on carrier distributions with the influence of gate electric field at different channel regions.</description><subject>Enhancement mode (E-mode)</subject><subject>field plate</subject><subject>Gallium nitride</subject><subject>GaN</subject><subject>HEMTs</subject><subject>high-electron mobility transistor</subject><subject>Logic gates</subject><subject>Metals</subject><subject>MODFETs</subject><subject>Threshold voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE9Lw0AQxRdRsFbvgpf9Aqn7fzdHadNGaNVDxZOEzWZCI2kiu9uDfnq3tHiZmQfvDY8fQveUzCgl-eO2WMwYoXrGtFFC5xdoQqXUWa6EukQTQqjJcm74NboJ4StJJQSboM_5znrrIvju18ZuHAIeW1wMOzs42MMQs83YAF6Mh7oHXEIyjiH6g4sHD3hlX3BZbLYBf3Rxl2QEvOygb_Bbn-5wi65a2we4O-8pel8W23mZrV9Xz_OndeaY4jHjAhpljRO2lkSn6VSbG7CWCgWSABeSc8FYTWhOaka1hKSsMOC0dozyKSKnvy61Cx7a6tt3e-t_KkqqI54q4amOeKoznhR5OEU6APi3GyaUppL_AYYAYMw</recordid><startdate>201802</startdate><enddate>201802</enddate><creator>Lee, Chun-Hsun</creator><creator>Lin, Wei-Ren</creator><creator>Lee, Yu-Hsuan</creator><creator>Huang, Jian-Jang</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-8798-8581</orcidid><orcidid>https://orcid.org/0000-0002-0560-6920</orcidid><orcidid>https://orcid.org/0000-0002-5761-2177</orcidid></search><sort><creationdate>201802</creationdate><title>Characterizations of Enhancement-Mode Double Heterostructure GaN HEMTs With Gate Field Plates</title><author>Lee, Chun-Hsun ; Lin, Wei-Ren ; Lee, Yu-Hsuan ; Huang, Jian-Jang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-34ed6a8c4ab5074abc6f98eaa146e50e34533422b0190b2175e422a48ec77c213</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Enhancement mode (E-mode)</topic><topic>field plate</topic><topic>Gallium nitride</topic><topic>GaN</topic><topic>HEMTs</topic><topic>high-electron mobility transistor</topic><topic>Logic gates</topic><topic>Metals</topic><topic>MODFETs</topic><topic>Threshold voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Chun-Hsun</creatorcontrib><creatorcontrib>Lin, Wei-Ren</creatorcontrib><creatorcontrib>Lee, Yu-Hsuan</creatorcontrib><creatorcontrib>Huang, Jian-Jang</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lee, Chun-Hsun</au><au>Lin, Wei-Ren</au><au>Lee, Yu-Hsuan</au><au>Huang, Jian-Jang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterizations of Enhancement-Mode Double Heterostructure GaN HEMTs With Gate Field Plates</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2018-02</date><risdate>2018</risdate><volume>65</volume><issue>2</issue><spage>488</spage><epage>492</epage><pages>488-492</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>With the purpose to increase the threshold voltage of the enhancement mode GaN high-electron mobility transistors, we fabricated devices with gate field plates on the p-GaN/AlGaN/GaN/AlGaN double heterostructures. 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| subjects | Enhancement mode (E-mode) field plate Gallium nitride GaN HEMTs high-electron mobility transistor Logic gates Metals MODFETs Threshold voltage |
| title | Characterizations of Enhancement-Mode Double Heterostructure GaN HEMTs With Gate Field Plates |
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