New Structural Design of Gated Lateral Bipolar Junction Transistor for Sensor Applications
In this paper, we propose a gated lateral bipolar junction transistor (GLBJT) that has a cascade structure, resulting in improved sensing performance over conventional GLBJTs. The device can be operated in bipolar junction transistor (BJT) mode, metal-oxide-semiconductor field-effect transistor (MOS...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 2018-01, Vol.65 (1), p.243-250 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 250 |
|---|---|
| container_issue | 1 |
| container_start_page | 243 |
| container_title | IEEE transactions on electron devices |
| container_volume | 65 |
| creator | Jeong, Hyun-Min Kwon, Jin-Beom Kwon, Hyurk-Choon Kim, Ju-Seong Xu, Binrui Kwon, Dae-Hyuk Kang, Shin-Won |
| description | In this paper, we propose a gated lateral bipolar junction transistor (GLBJT) that has a cascade structure, resulting in improved sensing performance over conventional GLBJTs. The device can be operated in bipolar junction transistor (BJT) mode, metal-oxide-semiconductor field-effect transistor (MOSFET) mode, and a hybrid MOSFET-BJT mode under input bias control. The device exhibits higher transconductance than that of conventional GLBJTs owing to the cascade structure using pMOSFET. The cascade effect generated in the proposed device is shown to increase the transconductance, and the results from two experiments [pH response and C-reactive protein (CRP)-antigen detection] demonstrate that the sensitivity of the proposed sensor exceeds that of conventional GLBJTs. The proposed device offers approximately 2.5 times that the sensitivity of conventional GLBJTs in the pH and CRP-antigen detection experiments. These results confirm that the proposed device has enhanced sensitivity and suggests the possibility of realizing more efficient sensors with better sensitivity than that of conventional GLBJTs. |
| doi_str_mv | 10.1109/TED.2017.2777603 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TED_2017_2777603</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8168822</ieee_id><sourcerecordid>10_1109_TED_2017_2777603</sourcerecordid><originalsourceid>FETCH-LOGICAL-c263t-2a6e6b3f6da2bb1a33d90f6b3a3340fb0d9c23117c97430177712eae143ec0c73</originalsourceid><addsrcrecordid>eNo9UMFOwzAMjRBIlMEdiUt-oCNOuqQ9jm0M0ASHlQuXKk0dFFTaKumE-HtSbeJgP_vpPUt-hNwCmwOw4r7crOecgZpzpZRk4owksFiotJCZPCcJY5CnhcjFJbkK4SuuMst4Qj5e8YfuR38w48Hrlq4xuM-O9pZu9YgN3cU-8Q9u6Fvt6cuhM6PrO1p63QUXxt5TG2uPXYiwHIbWGT0pwjW5sLoNeHPCGXl_3JSrp3T3tn1eLXep4VKMKdcSZS2sbDSva9BCNAWzkYlTxmzNmsJwAaBMoTIRP1QKOGqETKBhRokZYce7xvcheLTV4N239r8VsGrKporZVFM21SmbaLk7Whwi_stzkHnOufgDtvBguw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>New Structural Design of Gated Lateral Bipolar Junction Transistor for Sensor Applications</title><source>IEEE Electronic Library (IEL)</source><creator>Jeong, Hyun-Min ; Kwon, Jin-Beom ; Kwon, Hyurk-Choon ; Kim, Ju-Seong ; Xu, Binrui ; Kwon, Dae-Hyuk ; Kang, Shin-Won</creator><creatorcontrib>Jeong, Hyun-Min ; Kwon, Jin-Beom ; Kwon, Hyurk-Choon ; Kim, Ju-Seong ; Xu, Binrui ; Kwon, Dae-Hyuk ; Kang, Shin-Won</creatorcontrib><description>In this paper, we propose a gated lateral bipolar junction transistor (GLBJT) that has a cascade structure, resulting in improved sensing performance over conventional GLBJTs. The device can be operated in bipolar junction transistor (BJT) mode, metal-oxide-semiconductor field-effect transistor (MOSFET) mode, and a hybrid MOSFET-BJT mode under input bias control. The device exhibits higher transconductance than that of conventional GLBJTs owing to the cascade structure using pMOSFET. The cascade effect generated in the proposed device is shown to increase the transconductance, and the results from two experiments [pH response and C-reactive protein (CRP)-antigen detection] demonstrate that the sensitivity of the proposed sensor exceeds that of conventional GLBJTs. The proposed device offers approximately 2.5 times that the sensitivity of conventional GLBJTs in the pH and CRP-antigen detection experiments. These results confirm that the proposed device has enhanced sensitivity and suggests the possibility of realizing more efficient sensors with better sensitivity than that of conventional GLBJTs.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2017.2777603</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>C-reactive protein (CRP) ; cascade structure ; gated lateral bipolar junction transistor (GLBJT) ; Logic gates ; MOSFET ; pH sensor ; Proteins ; Sensitivity ; Sensors ; Transconductance</subject><ispartof>IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.243-250</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c263t-2a6e6b3f6da2bb1a33d90f6b3a3340fb0d9c23117c97430177712eae143ec0c73</citedby><cites>FETCH-LOGICAL-c263t-2a6e6b3f6da2bb1a33d90f6b3a3340fb0d9c23117c97430177712eae143ec0c73</cites><orcidid>0000-0003-0515-161X ; 0000-0001-9445-4860</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8168822$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8168822$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jeong, Hyun-Min</creatorcontrib><creatorcontrib>Kwon, Jin-Beom</creatorcontrib><creatorcontrib>Kwon, Hyurk-Choon</creatorcontrib><creatorcontrib>Kim, Ju-Seong</creatorcontrib><creatorcontrib>Xu, Binrui</creatorcontrib><creatorcontrib>Kwon, Dae-Hyuk</creatorcontrib><creatorcontrib>Kang, Shin-Won</creatorcontrib><title>New Structural Design of Gated Lateral Bipolar Junction Transistor for Sensor Applications</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In this paper, we propose a gated lateral bipolar junction transistor (GLBJT) that has a cascade structure, resulting in improved sensing performance over conventional GLBJTs. The device can be operated in bipolar junction transistor (BJT) mode, metal-oxide-semiconductor field-effect transistor (MOSFET) mode, and a hybrid MOSFET-BJT mode under input bias control. The device exhibits higher transconductance than that of conventional GLBJTs owing to the cascade structure using pMOSFET. The cascade effect generated in the proposed device is shown to increase the transconductance, and the results from two experiments [pH response and C-reactive protein (CRP)-antigen detection] demonstrate that the sensitivity of the proposed sensor exceeds that of conventional GLBJTs. The proposed device offers approximately 2.5 times that the sensitivity of conventional GLBJTs in the pH and CRP-antigen detection experiments. These results confirm that the proposed device has enhanced sensitivity and suggests the possibility of realizing more efficient sensors with better sensitivity than that of conventional GLBJTs.</description><subject>C-reactive protein (CRP)</subject><subject>cascade structure</subject><subject>gated lateral bipolar junction transistor (GLBJT)</subject><subject>Logic gates</subject><subject>MOSFET</subject><subject>pH sensor</subject><subject>Proteins</subject><subject>Sensitivity</subject><subject>Sensors</subject><subject>Transconductance</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9UMFOwzAMjRBIlMEdiUt-oCNOuqQ9jm0M0ASHlQuXKk0dFFTaKumE-HtSbeJgP_vpPUt-hNwCmwOw4r7crOecgZpzpZRk4owksFiotJCZPCcJY5CnhcjFJbkK4SuuMst4Qj5e8YfuR38w48Hrlq4xuM-O9pZu9YgN3cU-8Q9u6Fvt6cuhM6PrO1p63QUXxt5TG2uPXYiwHIbWGT0pwjW5sLoNeHPCGXl_3JSrp3T3tn1eLXep4VKMKdcSZS2sbDSva9BCNAWzkYlTxmzNmsJwAaBMoTIRP1QKOGqETKBhRokZYce7xvcheLTV4N239r8VsGrKporZVFM21SmbaLk7Whwi_stzkHnOufgDtvBguw</recordid><startdate>201801</startdate><enddate>201801</enddate><creator>Jeong, Hyun-Min</creator><creator>Kwon, Jin-Beom</creator><creator>Kwon, Hyurk-Choon</creator><creator>Kim, Ju-Seong</creator><creator>Xu, Binrui</creator><creator>Kwon, Dae-Hyuk</creator><creator>Kang, Shin-Won</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-0515-161X</orcidid><orcidid>https://orcid.org/0000-0001-9445-4860</orcidid></search><sort><creationdate>201801</creationdate><title>New Structural Design of Gated Lateral Bipolar Junction Transistor for Sensor Applications</title><author>Jeong, Hyun-Min ; Kwon, Jin-Beom ; Kwon, Hyurk-Choon ; Kim, Ju-Seong ; Xu, Binrui ; Kwon, Dae-Hyuk ; Kang, Shin-Won</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-2a6e6b3f6da2bb1a33d90f6b3a3340fb0d9c23117c97430177712eae143ec0c73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>C-reactive protein (CRP)</topic><topic>cascade structure</topic><topic>gated lateral bipolar junction transistor (GLBJT)</topic><topic>Logic gates</topic><topic>MOSFET</topic><topic>pH sensor</topic><topic>Proteins</topic><topic>Sensitivity</topic><topic>Sensors</topic><topic>Transconductance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jeong, Hyun-Min</creatorcontrib><creatorcontrib>Kwon, Jin-Beom</creatorcontrib><creatorcontrib>Kwon, Hyurk-Choon</creatorcontrib><creatorcontrib>Kim, Ju-Seong</creatorcontrib><creatorcontrib>Xu, Binrui</creatorcontrib><creatorcontrib>Kwon, Dae-Hyuk</creatorcontrib><creatorcontrib>Kang, Shin-Won</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jeong, Hyun-Min</au><au>Kwon, Jin-Beom</au><au>Kwon, Hyurk-Choon</au><au>Kim, Ju-Seong</au><au>Xu, Binrui</au><au>Kwon, Dae-Hyuk</au><au>Kang, Shin-Won</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>New Structural Design of Gated Lateral Bipolar Junction Transistor for Sensor Applications</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2018-01</date><risdate>2018</risdate><volume>65</volume><issue>1</issue><spage>243</spage><epage>250</epage><pages>243-250</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this paper, we propose a gated lateral bipolar junction transistor (GLBJT) that has a cascade structure, resulting in improved sensing performance over conventional GLBJTs. The device can be operated in bipolar junction transistor (BJT) mode, metal-oxide-semiconductor field-effect transistor (MOSFET) mode, and a hybrid MOSFET-BJT mode under input bias control. The device exhibits higher transconductance than that of conventional GLBJTs owing to the cascade structure using pMOSFET. The cascade effect generated in the proposed device is shown to increase the transconductance, and the results from two experiments [pH response and C-reactive protein (CRP)-antigen detection] demonstrate that the sensitivity of the proposed sensor exceeds that of conventional GLBJTs. The proposed device offers approximately 2.5 times that the sensitivity of conventional GLBJTs in the pH and CRP-antigen detection experiments. These results confirm that the proposed device has enhanced sensitivity and suggests the possibility of realizing more efficient sensors with better sensitivity than that of conventional GLBJTs.</abstract><pub>IEEE</pub><doi>10.1109/TED.2017.2777603</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0003-0515-161X</orcidid><orcidid>https://orcid.org/0000-0001-9445-4860</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.243-250 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_TED_2017_2777603 |
| source | IEEE Electronic Library (IEL) |
| subjects | C-reactive protein (CRP) cascade structure gated lateral bipolar junction transistor (GLBJT) Logic gates MOSFET pH sensor Proteins Sensitivity Sensors Transconductance |
| title | New Structural Design of Gated Lateral Bipolar Junction Transistor for Sensor Applications |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T22%3A49%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=New%20Structural%20Design%20of%20Gated%20Lateral%20Bipolar%20Junction%20Transistor%20for%20Sensor%20Applications&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Jeong,%20Hyun-Min&rft.date=2018-01&rft.volume=65&rft.issue=1&rft.spage=243&rft.epage=250&rft.pages=243-250&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2017.2777603&rft_dat=%3Ccrossref_RIE%3E10_1109_TED_2017_2777603%3C/crossref_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=8168822&rfr_iscdi=true |