Empirical Model for Nonuniformly Doped Symmetric Double-Gate Junctionless Transistor

This paper demonstrates the influence of nonuniform doping on the electrostatics of symmetric double-gate junctionless transistor using empirical modeling scheme. To present the clear insight into the device electrostatics of nonuniform doped channel, the peak of the doping concentration has been va...

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Veröffentlicht in:	IEEE transactions on electron devices 2018-01, Vol.65 (1), p.314-321
Hauptverfasser:	Kumari, Vandana, Kumar, Ayush, Saxena, Manoj, Gupta, Mridula
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical models Doping FinFETs junctionless (JL) Mathematical model modeling nonuniform doping Performance evaluation Semiconductor process modeling
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