Side-by-Side Comparison of Single- and Dual-Active Layer Oxide TFTs: Experiment and TCAD Simulation

Single-active layer (SAL) and dual-active layer (DAL) oxide thin-film transistors (TFTs) are fabricated using the same process conditions and compared side by side. The SAL channel consists of amorphous In-Ga-Zn-O (a-IGZO), and the DAL of ultrathin In-Sn-O and a-IGZO. The DAL TFT exhibits strongly i...

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Veröffentlicht in:	IEEE transactions on electron devices 2017-10, Vol.64 (10), p.4131-4136
Hauptverfasser:	Stewart, Kevin A., Gouliouk, Vasily, McGlone, John M., Wager, John F.
Format:	Artikel
Sprache:	eng
Schlagworte:	CAD Computational modeling Computer aided design Computer simulation Dual-active layer (DAL) high mobility Indium tin oxide In–Ga–Zn–O (IGZO) In–Sn–O (ITO) Logic gates Performance evaluation Semiconductor devices Simulation Stress technology computeraided design (TCAD) simulation Thin film transistors thin-film transistor (TFT) Threshold voltage
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