Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors

In this study, N-type amorphous indium zinc oxide thin-film transistors are fabricated and temperature-dependent electrical characteristics in the range of 170-295 K are analyzed through experimental measurements and using an equivalent-circuit model. In this model, thermionic field emission for rev...

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Veröffentlicht in:	IEEE transactions on electron devices 2017-08, Vol.64 (8), p.3183-3188, Article 3183
Hauptverfasser:	Heo, Keun, Cho, Kyung-Sang, Choi, Jun Young, Han, Sangmin, Yu, Yun Seop, Park, Yonmook, Yoo, Gwangwe, Park, Jin-Hong, Hwang, Sung Woo, Lee, Sang Yeol
Format:	Artikel
Sprache:	eng
Schlagworte:	Barrier height Electrical resistance measurement Electrodes indium zinc oxide Integrated circuit modeling Logic gates modeling Schottky diode temperature dependence Temperature measurement Thin film transistors thin-film transistor (TFT) Zinc oxide
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