Electro-Thermal Annealing Method for Recovery of Cyclic Bending Stress in Flexible a-IGZO TFTs

Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) fabricated by low-temperature processes on a flexible substrate can easily be degraded by mechanical deformation. Furthermore, lower performance in terms of the initial characteristics and reliability levels compared to those fabricated on g...

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Veröffentlicht in:IEEE transactions on electron devices 2017-08, Vol.64 (8), p.3189-3192
Hauptverfasser: Lee, Myung Keun, Kim, Choong-Ki, Park, Jeong Woo, Kim, Eungtaek, Seol, Myeong-Lok, Park, Jun-Young, Choi, Yang-Kyu, Park, Sang-Hee Ko, Choi, Kyung Cheol
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Sprache:eng
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