Current Crowding Effect of Equilateral Polygon Emitter Transistors

This brief deals with current crowding in the equilateral polygon emitter transistor. Simple, analytical expressions are derived for the base current and the base resistance, which can be applied to specific emitter geometries, including the triangular, rectangular, hexagonal, and octagonal emitters...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2017-06, Vol.64 (6), p.2770-2772
Hauptverfasser:	Xu, Xiaobo, Wang, Xiaoyan, Gu, Wenping, Quan, Si
Format:	Artikel
Sprache:	eng
Schlagworte:	Base resistance bipolar transistor Bipolar transistors current crowding Geometry Layout Proximity effects Resistance Transistors
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