Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers

Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers

The electronic and optical properties of InP-based InGaAs/GaAsSbBi type-II quantum well (QW) structures are investigated theoretically. The detailed analyses of the InGaAs/GaAsSbBi type-II QW laser structures were based on a 14-band k · p model. The theoretical results indicate that adding Bi into I...

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Veröffentlicht in:IEEE transactions on electron devices 2017-04, Vol.64 (4), p.1606-1611
1. Verfasser: Chen, Baile
Format: Artikel
Sprache:eng
Schlagworte:
Couplings
Dilute bismide GaAsSbBi
Indium gallium arsenide
Laser modes
Laser theory
Metals
mid-wavelength infrared
optical gain
Photonic band gap
Quantum cascade lasers
type-II quantum well (QW)
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description The electronic and optical properties of InP-based InGaAs/GaAsSbBi type-II quantum well (QW) structures are investigated theoretically. The detailed analyses of the InGaAs/GaAsSbBi type-II QW laser structures were based on a 14-band k · p model. The theoretical results indicate that adding Bi into InGaAs/GaAsSb type-II active regions on InP allows wavelength extension, but with minimal impact to transition matrix element. Moreover, the gain characteristics of the active region of laser were studied as a function of the Bi composition. It is shown that these type-II QW structures are suitable for mid-infrared (2-4 μm) operation at room temperature.
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fullrecord <record><control><sourceid>crossref_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TED_2017_2665579</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7859421</ieee_id><sourcerecordid>10_1109_TED_2017_2665579</sourcerecordid><originalsourceid>FETCH-LOGICAL-c263t-2b46228e39b475d745d0ed4249a509ff2f5476573742181a5a2fa037e7a55d723</originalsourceid><addsrcrecordid>eNo9kEtLAzEUhYMoWKt7wU3-QGremSz7sg5U1FJxOaQzNzUyndZkKvTfO6XF1eHC-c6FD6F7RgeMUfu4nE4GnDIz4ForZewF6rEuidVSX6IepSwjVmTiGt2k9N2dWkreQz_Dsg2_gBewDtsGTyCFdYNdU-GZCw0ef7noyhZiSG0oE956nDdvZOQSVHgS6n0LeBTSJlSAl4cdkDzH73vXtPsN_oS6TthvI34JFckXeN5RMd2iK-_qBHfn7KOPp-ly_Ezmr7N8PJyTkmvREr6SmvMMhF1JoyojVUWhklxap6j1nnsljVZGGMlZxpxy3DsqDBinujoXfURPu2XcphTBF7sYNi4eCkaLo7KiU1YclRVnZR3ycEICAPzXTaZs90P8AfPcZhw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers</title><source>IEEE Electronic Library (IEL)</source><creator>Chen, Baile</creator><creatorcontrib>Chen, Baile</creatorcontrib><description>The electronic and optical properties of InP-based InGaAs/GaAsSbBi type-II quantum well (QW) structures are investigated theoretically. The detailed analyses of the InGaAs/GaAsSbBi type-II QW laser structures were based on a 14-band k · p model. The theoretical results indicate that adding Bi into InGaAs/GaAsSb type-II active regions on InP allows wavelength extension, but with minimal impact to transition matrix element. Moreover, the gain characteristics of the active region of laser were studied as a function of the Bi composition. It is shown that these type-II QW structures are suitable for mid-infrared (2-4 μm) operation at room temperature.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2017.2665579</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Couplings ; Dilute bismide GaAsSbBi ; Indium gallium arsenide ; Laser modes ; Laser theory ; Metals ; mid-wavelength infrared ; optical gain ; Photonic band gap ; Quantum cascade lasers ; type-II quantum well (QW)</subject><ispartof>IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1606-1611</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c263t-2b46228e39b475d745d0ed4249a509ff2f5476573742181a5a2fa037e7a55d723</citedby><cites>FETCH-LOGICAL-c263t-2b46228e39b475d745d0ed4249a509ff2f5476573742181a5a2fa037e7a55d723</cites><orcidid>0000-0002-3265-5787</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7859421$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7859421$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chen, Baile</creatorcontrib><title>Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The electronic and optical properties of InP-based InGaAs/GaAsSbBi type-II quantum well (QW) structures are investigated theoretically. The detailed analyses of the InGaAs/GaAsSbBi type-II QW laser structures were based on a 14-band k · p model. The theoretical results indicate that adding Bi into InGaAs/GaAsSb type-II active regions on InP allows wavelength extension, but with minimal impact to transition matrix element. Moreover, the gain characteristics of the active region of laser were studied as a function of the Bi composition. It is shown that these type-II QW structures are suitable for mid-infrared (2-4 μm) operation at room temperature.</description><subject>Couplings</subject><subject>Dilute bismide GaAsSbBi</subject><subject>Indium gallium arsenide</subject><subject>Laser modes</subject><subject>Laser theory</subject><subject>Metals</subject><subject>mid-wavelength infrared</subject><subject>optical gain</subject><subject>Photonic band gap</subject><subject>Quantum cascade lasers</subject><subject>type-II quantum well (QW)</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEtLAzEUhYMoWKt7wU3-QGremSz7sg5U1FJxOaQzNzUyndZkKvTfO6XF1eHC-c6FD6F7RgeMUfu4nE4GnDIz4ForZewF6rEuidVSX6IepSwjVmTiGt2k9N2dWkreQz_Dsg2_gBewDtsGTyCFdYNdU-GZCw0ef7noyhZiSG0oE956nDdvZOQSVHgS6n0LeBTSJlSAl4cdkDzH73vXtPsN_oS6TthvI34JFckXeN5RMd2iK-_qBHfn7KOPp-ly_Ezmr7N8PJyTkmvREr6SmvMMhF1JoyojVUWhklxap6j1nnsljVZGGMlZxpxy3DsqDBinujoXfURPu2XcphTBF7sYNi4eCkaLo7KiU1YclRVnZR3ycEICAPzXTaZs90P8AfPcZhw</recordid><startdate>201704</startdate><enddate>201704</enddate><creator>Chen, Baile</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-3265-5787</orcidid></search><sort><creationdate>201704</creationdate><title>Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers</title><author>Chen, Baile</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-2b46228e39b475d745d0ed4249a509ff2f5476573742181a5a2fa037e7a55d723</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Couplings</topic><topic>Dilute bismide GaAsSbBi</topic><topic>Indium gallium arsenide</topic><topic>Laser modes</topic><topic>Laser theory</topic><topic>Metals</topic><topic>mid-wavelength infrared</topic><topic>optical gain</topic><topic>Photonic band gap</topic><topic>Quantum cascade lasers</topic><topic>type-II quantum well (QW)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Baile</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, Baile</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2017-04</date><risdate>2017</risdate><volume>64</volume><issue>4</issue><spage>1606</spage><epage>1611</epage><pages>1606-1611</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The electronic and optical properties of InP-based InGaAs/GaAsSbBi type-II quantum well (QW) structures are investigated theoretically. The detailed analyses of the InGaAs/GaAsSbBi type-II QW laser structures were based on a 14-band k · p model. The theoretical results indicate that adding Bi into InGaAs/GaAsSb type-II active regions on InP allows wavelength extension, but with minimal impact to transition matrix element. Moreover, the gain characteristics of the active region of laser were studied as a function of the Bi composition. It is shown that these type-II QW structures are suitable for mid-infrared (2-4 μm) operation at room temperature.</abstract><pub>IEEE</pub><doi>10.1109/TED.2017.2665579</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-3265-5787</orcidid></addata></record>
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subjects Couplings
Dilute bismide GaAsSbBi
Indium gallium arsenide
Laser modes
Laser theory
Metals
mid-wavelength infrared
optical gain
Photonic band gap
Quantum cascade lasers
type-II quantum well (QW)
title Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T13%3A48%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Active%20Region%20Design%20and%20Gain%20Characteristics%20of%20InP-Based%20Dilute%20Bismide%20Type-II%20Quantum%20Wells%20for%20Mid-IR%20Lasers&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Chen,%20Baile&rft.date=2017-04&rft.volume=64&rft.issue=4&rft.spage=1606&rft.epage=1611&rft.pages=1606-1611&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2017.2665579&rft_dat=%3Ccrossref_RIE%3E10_1109_TED_2017_2665579%3C/crossref_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=7859421&rfr_iscdi=true