Defect-Related Degradation of AlGaN-Based UV-B LEDs

This paper describes an extensive analysis of the degradation of (InAlGa)N-based UV-B light-emitting diodes (LEDs) submitted to constant current stress. This paper is based on combined electrical characterization, spectral analysis of the emission, deep-level transient spectroscopy (DLTS) and photoc...

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Veröffentlicht in:	IEEE transactions on electron devices 2017-01, Vol.64 (1), p.200-205
Hauptverfasser:	Monti, Desiree, Meneghini, Matteo, De Santi, Carlo, Meneghesso, Gaudenzio, Zanoni, Enrico, Glaab, Johannes, Rass, Jens, Einfeldt, Sven, Mehnke, Frank, Enslin, Johannes, Wernicke, Tim, Kneissl, Michael
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN Conduction bands Current voltage characteristics Deep level transient spectroscopy Defects Degradation Electrical properties Electron traps Emission analysis Light emitting diodes light emitting diodes (LEDs) Optical properties Optical variables measurement Photoelectric effect Spectroscopic analysis Spectrum analysis Stress Stress measurement UV-B Voltage measurement
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