Degradation Mechanisms of Amorphous InGaZnO Thin-Film Transistors Used in Foldable Displays by Dynamic Mechanical Stress

Foldable displays represent one of the most attractive next-generation display applications. Therefore, it is critical to analyze the effects of mechanical stress on amorphous InGaZnO (a-IGZO) thin-film-transistors (TFTs) in order to apply them to foldable displays. In foldable display applications,...

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Veröffentlicht in:	IEEE transactions on electron devices 2017-01, Vol.64 (1), p.170-175
Hauptverfasser:	Lee, Sang Myung, Shin, Dongseok, Yun, Ilgu
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous InGaZnO (a-IGZO) Bend radius bending direction Bending stresses Bridges CAD Circuits Computer aided design Computer simulation Degradation degradation mechanism Displays foldable display Indium gallium zinc oxide mechanical stress modeling and simulation Semiconductor devices Strain Stress Stress measurement Thin film transistors Transistors
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