Consideration of the Effect of Barrier Height on the Variation of Specific Contact Resistance With Temperature

Temperature variation during semiconductor device operation can be significant and how this affects contact resistance is investigated. This paper reports improvements to analytical modeling for determining specific contact resistance (SCR) by including the effect of temperature. A technique for ext...

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Veröffentlicht in:	IEEE transactions on electron devices 2017-01, Vol.64 (1), p.325-328
Hauptverfasser:	Tran, Hiep N., Bui, Tuan A., Collins, Aaron M., Holland, Anthony S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical models CAD Computer aided design Contact resistance Doping Electron affinity Iron Mathematical analysis Mathematical models Modelling Ohmic contact Schottky barrier Silicon specific contact resistance (SCR) technology computer–aided design (TCAD) Temperature effects Thyristors
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