A Novel Tunnel FET Design With Stacked Source Configuration for Average Subthreshold Swing Reduction

In this paper, a novel heterostacked tunnel FET (HS-TFET) is proposed for steeper average subthreshold swing (SS). Different from conventional TFETs, HS-TFETs owns a stacked source configuration consisting of an upper source layer with a relatively larger bandgap material and an underlying source la...

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Veröffentlicht in:	IEEE transactions on electron devices 2016-12, Vol.63 (12), p.5072-5076
Hauptverfasser:	Wu, Chunlei, Huang, Qianqian, Zhao, Yang, Wang, Jiaxin, Wang, Yangyuan, Huang, Ru
Format:	Artikel
Sprache:	eng
Schlagworte:	Band-to-band tunneling (BTBT) Configuration management Degradation Energy gap Field effect transistors Germanium heterostructure Leakage current Nanoelectronics Photonic band gap Silicon subthreshold slope TFETs tunnel FET (TFET) Tunneling Tunnels
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