Hybrid Open Drain Method and Fully Current-Based Characterization of Asymmetric Resistance Components in a Single MOSFET

Separate extraction of source (RS) from drain resistance (RD) is important in the systematic modeling of electrical characteristics and investigation of physical mechanism related to the performance and reliability in MOSFETs and their integrated circuits. We report a hybrid open drain method (ODM),...

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Veröffentlicht in:	IEEE transactions on electron devices 2016-11, Vol.63 (11), p.4196-4200
Hauptverfasser:	Kim, Jaewon, Lee, Heesung, Kim, Seong Kwang, Kim, Junyeap, Park, Jaewon, Choi, Sung-Jin, Kim, Dae Hwan, Kim, Dong Myong
Format:	Artikel
Sprache:	eng
Schlagworte:	Customer relationship management Degradation Drain resistance Integrated circuit modeling MOSFET open drain method (ODM) Resistance separate extraction single MOSFET source resistance substrate resistance Substrates Transconductance
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